ESDA6V8UD will semiconductor ltd. 1 revision 5.0, 2016/11/02 ESDA6V8UD 4-lines, uni-directional, ultra-low capacitance transient voltage suppressors descriptions the ESDA6V8UD is an ultra-low capacitance tvs (transient voltage suppressor) array designed to protect high speed data interfaces. it has been specifically designed to protect sensitive electronic components which are connected to data and transmission lines from over-stress caused by esd (electrostatic discharge). the ESDA6V8UD incorporates four pairs of ultra-low capacitance steering diodes plus a tvs diode. the ESDA6V8UD may be used to provide esd protection up to 20kv (contact discharge) according to iec61000-4-2, and withstand peak pulse current up to 4a (8/20 s) according to iec61000-4-5. the ESDA6V8UD is available in dfn2510-10l package. standard products are pb-free and halogen-free. features ? stand-off voltage: 5v max. ? transient protection for each line according to iec61000-4-2 (esd): 20kv (contact discharge) iec61000-4-4 (eft): 40a (5/50ns) iec61000-4-5 (surge): 4a (8/20 s) ? ultra-low capacitance: c j = 0.4pf typ. ? ultra-low leakage current: i r <1na typ. ? low clamping voltage: v cl = 14v typ. @ i pp = 16a (tlp) ? solid-state silicon technology applications ? usb 2.0 and usb 3.0 ? hdmi 1.3, hdmi 1.4 and hdmi 2.0 ? sata and esata ? dvi ? ieee 1394 ? pci express ? portable electronics and notebooks http//:www.sh-willsemi.com dfn2510-10l (bottom view) pin configuration (top view) 6v8 = device code * = month code (a~z) marking & pin configuration order information device package shipping ESDA6V8UD-10/tr dfn2510-10l 3000/tape&reel 12345 6 7 8 9 10 i/o1 i/o2 i/o3 i/o4 gnd gnd nc nc nc nc 15 6 10 6v8 * 145 2 3, 8
esd a 6v8 u d will semiconductor ltd. 2 revision 5 .0 , 201 6 / 11 / 0 2 absolute m aximum r ating s electrical characteristics (t a =25 o c, unless otherwise noted) definitions of electrical characteristics parameter symbol rating unit peak pulse power ( t p = 8/20 s) p pk 4 8 w peak pulse current (t p = 8/20 s) i pp 4 a esd according to iec61000 - 4 - 2 air discharge v esd 2 0 k v esd according to iec61 000 - 4 - 2 contact discharge 2 0 j unction t emperature t j 1 25 o c operating temperature t op - 40 ~ 85 o c lead temperature t l 260 o c storage temperature t stg - 55~150 o c i v v f v r w m v b r v f c i p p i f i r i b r v c l i p p v f f o r w a r d v o l t a g e i f f o r w a r d c u r r e n t v f c f o r w a r d c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t v r w m r e v e r s e s t a n d - o f f v o l t a g e i r r e v e r s e l e a k a g e c u r r e n t v b r r e v e r s e b r e a k d o w n v o l t a g e v c l c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t
esd a 6v8 u d will semiconductor ltd. 3 revision 5 .0 , 201 6 / 11 / 0 2 electrical characteristics ( t a = 25 o c, unless otherwise noted ) notes: 1) tlp parameter: z 0 = 50 , t p = 100ns, t r = 2n s, averaging wind ow from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) contact discharge mode, according to iec61000 - 4 - 2. 3) non - repetitive current pulse, according to iec61000 - 4 - 5. parameter symbol condition min. typ. max. unit rever se maximum working voltage v rwm 5.0 v rever se leakage current i r v rwm = 5 v <1 1 00 n a rever se br eakdown voltage v br i t = 1ma 7.0 8. 0 9.0 v forward voltage v f i t = 1 0ma 0.6 0. 9 1.2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 1 4 v dynamic resistance 1) r dyn 0. 3 5 clamping voltage 2 ) v cl v esd = +8kv 1 5 v clamping voltage 3 ) v cl i pp = 1a , t p = 8/20s 1 0 v i pp = 4 a, t p = 8/20s 1 2 v junction capacitance c j v r = 0v, f = 1mhz any i/o pin to gnd 0.40 0.65 pf v r = 0v, f = 1mhz between any i/o pin 0. 25 0. 40 pf
esd a 6v8 u d will semiconductor ltd. 4 revision 5 .0 , 201 6 / 11 / 0 2 typical characteristics ( t a = 25 o c, unless otherwise noted ) 8/20 s w aveform per iec61000 - 4 - 5 clamping voltage vs. peak pulse current non - repetitive peak pulse p ower vs. pulse time contact discharge current waveform per iec61000 - 4 - 2 capacitance vs. rever se voltage power derating vs. ambient t emperature 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 0 100 20 90 50 10 t 2 t 1 front time: t 1 = 1.25 ? ? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t 0 1 2 3 4 5 8 9 10 11 12 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 1 2 3 4 5 0.20 0.25 0.30 0.35 0.40 0.45 0.50 between any i/o pin any i/o pin to gnd f = 1mhz c j - junction capacitance (pf) v r - reverse voltage (v)
esd a 6v8 u d will semiconductor ltd. 5 revision 5 .0 , 201 6 / 11 / 0 2 typical characteristics ( t a = 25 o c, unless otherwise noted ) esd clamping ( +8kv contact discharge per iec61000 - 4 - 2) tlp measurement esd clamping ( - 8kv contact discharge per iec61000 - 4 - 2 ) 0 2 4 6 8 10 12 14 16 -2 0 2 4 6 8 10 12 14 16 18 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
ESDA6V8UD will semiconductor ltd. 6 revision 5.0, 2016/11/02 package outline dimensions dfn2510-10l recommend land pattern (unit: mm) symbol dimensions in millimeter min. typ. max. a 0.500 0.575 0.650 a1 0.000 - 0.050 a3 0.150 ref. d 2.400 2.500 2.600 e 0.900 1.000 1.100 d1 0.300 0.400 0.500 e1 0.300 0.455 0.610 b 0.130 0.200 0.250 e 0.500 bsc l 0.300 0.400 0.500 notes: this recommended land pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met. 0.60 0.20 0.20 0.50 0.40 0.50
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