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2013-06-10 1 BAR90... silicon deep trench pin diodes ? optimized for low bias current antenna switches in hand held applications ? very low capacitance at zero volt reverse bias at frequencies above 1ghz (typ. 0.19 pf) ? low forward resistance (typ. 1.3 ? @ i f = 3 ma) ? improved on / off mode harmonic distortion balance ? pb-free (rohs compliant) package BAR90-02el BAR90-02els BAR90-098lrh 2 1 4 d2 d1 3 2 1 type package configuration l s (nh) marking BAR90-02els BAR90-02el BAR90-098lrh tsslp-2-3 tslp-2-19 tslp-4-7 single, leadless single, leadless anti-parallel pair, leadless 0.2 0.4 0.4 j* x t9 * marking of tsslp-2-3 with underline maximum ratings at t a = 25c, unless otherwise specified parameter symbol value unit diode reverse voltage v r 80 v forward current i f 100 ma total power dissipation t s 137 c, BAR90-02els t s 133c, all others p tot 150 250 mw junction temperature t j 150 c operating temperature range t op -55 ... 125 storage temperature t st g -55 ... 150
2013-06-10 2 BAR90... thermal resistance parameter symbol value unit junction - soldering point 1) BAR90-02els all others r thjs 90 65 k/w electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics breakdown voltage i (br) = 5 a v (br) 80 - - v reverse current v r = 60 v i r - - 50 na forward voltage i f = 3 ma i f = 100 ma v f 0.75 - 0.81 0.9 0.87 1 v 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation) 2013-06-10 3 BAR90... electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics diode capacitance v r = 1 v, f = 1 mhz v r = 0 v, f = 100 mhz v r = 0 v, f = 1 ghz v r = 0 v, f = 1.8 ghz c t - - - - 0.25 0.3 0.19 0.18 0.35 - - - pf reverse parallel resistance v r = 0 v, f = 100 mhz v r = 0 v, f = 1 ghz v r = 0 v, f = 1.8 ghz r p - - - 35 5 4 - - - k ? forward resistance i f = 1 ma, f = 100 mhz i f = 3 ma, f = 100 mhz i f = 10 ma, f = 100 mhz r f - - - 2 1.3 0.8 - 2.3 - ? charge carrier life time i f = 10 ma, i r = 6 ma, measured at i r = 3 ma, r l = 100 ? rr - 750 - ns i-region width w i - 20 - m insertion loss 1) i f = 1 ma, f = 1.8 ghz i f = 3 ma, f = 1.8 ghz i f = 10 ma, f = 1.8 ghz i l - - - 0.16 0.11 0.08 - - - db isolation 1) v r = 0 v, f = 0.9 ghz v r = 0 v, f = 1.8 ghz v r = 0 v, f = 2.45 ghz i so - - - 18.5 13.5 11.5 - - - 1 BAR90-02el in series configuration, z = 50 ? 2013-06-10 4 BAR90... diode capacitance c t = ? (v r ) f = parameter 0 2 4 6 8 10 12 14 16 v 20 v r 0.1 0.15 0.2 0.25 0.3 0.35 0.4 pf 0.5 c t 1 mhz 100 mhz 1 ghz 1.8 ghz reverse parallel resistance r p = ? ( v r ) f = parameter 0 2 4 6 8 10 12 14 16 v 20 v r -1 10 0 10 1 10 2 10 3 10 4 10 kohm r p 100 mhz 1 ghz 1.8 ghz forward resistance r f = ? ( i f ) f = 100 mhz 10 -1 10 0 10 1 10 2 ma i f -1 10 0 10 1 10 ohm r f forward current i f = ? ( v f ) t a = parameter 0.2 0.4 0.6 0.8 v 1.2 v f -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 a i f -40c +25 c +85 c +125 c 2013-06-10 5 BAR90... forward current i f = ? ( t s ) BAR90-02el / -098lrh 0 15 30 45 60 75 90 105 120 c 150 t s 0 10 20 30 40 50 60 70 80 90 100 ma 120 i f forward current i f = ? ( t s ) BAR90-02els 0 15 30 45 60 75 90 105 120 c 150 t s 0 10 20 30 40 50 60 70 80 90 100 ma 120 i f permissible puls load r thjs = ? ( t p ) BAR90-02el / -098lrh 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 c t p -1 10 0 10 1 10 2 10 ma r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = ? ( t p ) BAR90-02el /-098lrh 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 c t p 0 10 1 10 2 10 ma i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 2013-06-10 6 BAR90... permissible pulse load i fmax / i fdc = ? ( t p ) BAR90-02els 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible puls load r thjs = ? ( t p ) BAR90-02els 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 r thjs d = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 insertion loss i l = -|s 21 | 2 = ? ( f ) i f = parameter BAR90-02el in series configuration, z = 50 ? 0 1 2 3 4 ghz 6 f -0.4 -0.35 -0.3 -0.25 -0.2 -0.15 -0.1 db 0 |s 21 |2 10ma 3ma 1ma 0.5ma isolation i so = -| s 21 | 2 = ? (f) v r = parameter BAR90-02el in series configuration, z = 50 ? 0 1 2 3 4 ghz 6 f -30 -25 -20 -15 -10 db 0 |s 21 |2 0 v 1 v 10 v 2013-06-10 7 BAR90... package tslp-2-19 2013-06-10 8 BAR90... package tslp-4-7 1 2 4 3 3 4 0.05 max. +0.01 0.39 -0.03 1) dimension applies to plated terminal 1 2 0.05 0.8 0.45 0.05 4x 0.25 1) 0.035 0.035 1) 4 x 0.35 0.75 0.05 1.2 0.05 bottom view top view pin 1 marking 1.05 4 1.45 0.5 pin 1 marking 8 reel ?180 mm = 15.000 pieces/reel for board assembly information please refer to infineon website "packages" package outline foot print marking layout (example) standard packing stencil apertures copper solder mask 1.18 0.28 0.22 0.28 0.38 0.38 0.42 0.78 1.2 0.3 0.2 0.3 0.4 0.4 0.4 0.8 BAR90-07lrh type code pin 1 marking laser marking 2013-06-10 9 BAR90... package tsslp-2-3 2013-06-10 10 BAR90... edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( |
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