j cx , o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2N5806 - 2n5807 2n5809 mt20- -omt1 silicon bidirectional thyristors ... designed primarily for industrial and military applications for the control of ac loads in applications such as light dimmers, power sup- plies, heating controls, motor controls, welding equipment and power switching systems; or wherever full-wave, silicon gate controlled solid-state devices are needed. ? glass passivated junctions and center gate fire ? isolated stud for ease of assembly ? gate triggering guaranteed in all 4 quadrants maximum ratings thermal characteristics triacs (thyristors) 30 amperes rms rating ?repetitive peak off-state voltage 1 1) (tj--66to+125c) 1 /2 sine wave so to 60 hz, gate open ?peak principal voltage 2n^8l>6 2n5807 2n5809 ?peak gate voltage 'on-state current rms (tc . -65 to +85c) ?average gate power (tj ?+80c.t?b.3rml ?peak gate current ?operating junction temperature range ?storage temperature range ?stud torque 2n6160thru2n6165 symbol vdrm vgm itfrms) 'tsm |2t pom pg|av) igm tj tsw value 200 600 10 30 20 250 210 20 0.5 2.0 -6510+125 -65 to t150 30 unit volts volts amp amp a2s watts watt amp c c in. ib- characteristic ?thermal reiistance.junctiontocase symbol hsjc _._ max 1.0 unit c/w nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics (tc = 25c unless otherwise noted) char>ct mt2(+i,g(-i mt2(-),g(-) mt2(-i.g(+) ?mt2 (+1. gh-i; mt2 (-), gl-l tc = -65c ?mt2 (+>, g(-); mt2 (-), g(+) tc * -65c gate trigger voltage, continuous dc main terminal voltage = 12 vdc. rl - 50 ohms mt2 (+). g(+) mt2(+).g(-i mt2i-), g(-) mt2(-),g(+) ?all quadrants, tc = -65c) ?main terminal voltage = rated vdrm, rl = 10 k ohms, tj - +125c holding current main terminal voltage =12 vdc, gate open initiating current - 500 ma mt2 (+) mt2i-) ?either direction, tc ? -65c 'turn-on time main terminal voltage = rated vqrm. 'tm ~ 42 a. gate source voltage = 12 v, rg = 50 ohms. rise time - 0.1 /js. pulse width ? 2. qms blocking voltage application rate at commutation, f = 80hztc = 85c on-state conditions: |jm = 42a, pulse width = 4.0 ms. di/dt = 17.5 a/ms off state conditions: main terminal voltage = rated vqrm 1200 ms mini, gate source voltage = 0 v, r$ = 50 fl symbol idrm vtm 'gt vgt ih tgt dv/dt min _ - - - ? - ? - - ? - - - 2.0 - - - - _ typ _ 1.5 10 13 15 20 - - 0.7 0.7 0.8 0.9 - - 5.0 5.0 - 1.0 5.0 max 2.0 2.0 60 70 70 100 200 250 2.0 2.1 2.1 2.5 3.4 - 70 80 200 2.0 - unit ma volu ma volts ma la v//is ?indicates jedec registered data. '1) all voltage polarity reference to main terminal 1.
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