? 2017 ixys corporation, all rights reserved. v ces = 2500v i c110 = 12a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 4.50v t fi(typ) = 136ns ds100792(2/17) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 2500 v v ge(th) i c = 250 ? a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 25 ? a v ce = 0.8 ? v ces , v ge = 0v t j = 150 ? c 3.5 ma i ges v ce = 0v, v ge = ? 20v ?????????????? 100 na v ce(sat) i c = 12a, v ge = 15v, note 1 3.70 4.50 v t j = 150 ? c 5.55 v symbol test conditions maximum ratings v ces t j = 25c to 175c 2500 v v cgr t j = 25c to 175c, r ge = 1m ? 2500 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 28 a i c110 t c = 110c 12 a i f110 t c = 110c 14 a i cm t c = 25c, 1ms 80 a ssoa v ge = 15v, t vj = 150c, r g = 10 ? i cm = 48 a (rbsoa) clamped inductive load 1500 v p c t c = 25c 310 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6g high voltage xpt tm igbt w/ diode advance technical information features ? high voltage package ? high blocking voltage ? high peak current capability ? low saturation voltage advantages ? low gate drive requirement ? high power density applications ? switch-mode and resonant-mode power supplies ? uninterruptible power supplies (ups) ? laser generators ? capacitor discharge circuits ? ac switches IXYH12N250CV1HV to-247hv (ixyh) c (tab) g e c g = gate c = collector e = emitter tab = collector
ixys reserves the right to change limits, test conditions, and dimensions. IXYH12N250CV1HV ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . reverse diode (fred) (t j = 25c, unless otherwise specified) characteristic value symbol test conditions min. typ. max. v f 4.5 v t j = 150c 4.2 v i rm 22 a t rr 165 ns r thjc 0.80 c/w i f = 12a,v ge = 0v, -di f /dt = 500a/ s, v r = 1200v, t j = 150c i f = 12a,v ge = 0v, note 1 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 12a, v ce = 10v, note 1 7 12 s r gi gate input resistance 7.5 ? c ie s 1370 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 65 pf c res 16 pf q g(on) 56 nc q ge i c = 12a, v ge = 15v, v ce = 0.5 ? v ces 6 nc q gc 28 nc t d(on) 12 ns t ri 16 ns e on 3.56 mj t d(off) 167 ns t fi 136 ns e of f 1.70 mj t d(on) 12 ns t ri 20 ns e on 4.78 mj t d(off) 195 ns t fi 138 ns e off 1.95 mj r thjc 0.48 c/w r thcs 0.21 c/w inductive load, t j = 25c i c = 12a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 inductive load, t j = 150c i c = 12a, v ge = 15v v ce = 0.5 ? v ces , r g = 10 ? note 2 to-247hv outline pins: 1 - gate 2 - emitter 3, 4 - collector e r a q s a3 e d c b a1 l1 d3 d1 d2 e2 e3 3x 2x 4x 3x a2 b1 0p e1 0p1 4 3 1 2 e1 l
? 2017 ixys corporation, all rights reserved. IXYH12N250CV1HV fig. 1. output characteristics @ t j = 25oc 0 4 8 12 16 20 24 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 v ce - volts i c - amperes v ge = 15v 12v 10v 9v 8v 7v 6v fig. 2. extended output characteristics @ t j = 25oc 0 20 40 60 80 100 120 140 0 4 8 1216202428 v ce - volts i c - amperes v ge = 15v 10v 8v 11v 12v 7v 6v 9v 14v 13v fig. 3. output characteristics @ t j = 150oc 0 4 8 12 16 20 24 012345678910 v ce - volts i c - amperes 8v v ge = 15v 12v 10v 9v 5v 6v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 12a i c = 6a i c = 24a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 2 3 4 5 6 7 8 9 5 6 7 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 24a t j = 25oc 12a 6a fig. 6. input admittance 0 5 10 15 20 25 30 35 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYH12N250CV1HV fig. 7. transconductance 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 20 25 30 35 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 10 20 30 40 50 250 500 750 1000 1250 1500 1750 2000 2250 2500 v ce - volts i c - amperes t j = 150oc r g = 10 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 102030405060 q g - nanocoulombs v ge - volts v ce = 1250v i c = 12a i g = 10ma fig. 9. capacitance 1 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 11. maximum transient thermal impedance (igbt) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - k / w
? 2017 ixys corporation, all rights reserved. IXYH12N250CV1HV fig. 12. inductive switching energy loss vs. gate resistance 0 1 2 3 4 5 6 7 8 10 20 30 40 50 60 70 80 r g - ohms e off - millijoules 2 4 6 8 10 12 14 16 18 e on - millijoules e off e on t j = 150oc , v ge = 15v v ce = 1250v i c = 12a i c = 24a fig. 15. inductive turn-off switching times vs. gate resistance 90 100 110 120 130 140 150 160 170 180 190 10 20 30 40 50 60 70 80 r g - ohms t f i - nanoseconds 100 150 200 250 300 350 400 450 500 550 600 t d(off) - nanoseconds t f i t d(off) t j = 150oc, v ge = 15v v ce = 1250v i c = 24a i c = 12a fig. 13. inductive switching energy loss vs. collector current 0 1 2 3 4 5 6 6 8 10 12 14 16 18 20 22 24 i c - amperes e off - millijoules 0 2 4 6 8 10 12 e on - millijoules e off e on r g = 10 ? ????? v ge = 15v v ce = 1250v t j = 150oc t j = 25oc fig. 14. inductive switching energy loss vs. junction temperature 0 1 2 3 4 5 6 7 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 2 4 6 8 10 12 14 e on - millijoules e off e on r g = 10 ? ???? v ge = 15v v ce = 1250v i c = 12a i c = 24a fig. 16. inductive turn-off switching times vs. collector current 40 80 120 160 200 240 6 8 10 12 14 16 18 20 22 24 i c - amperes t f i - nanoseconds 140 160 180 200 220 240 t d(off) - nanoseconds t f i t d(off) r g = 10 ? ? , v ge = 15v v ce = 1250v t j = 150oc t j = 25oc fig. 17. inductiv e turn-off switching times v s. junction temperature 40 80 120 160 200 240 25 50 75 100 125 150 t j - degrees centigrade t f i - nanoseconds 130 150 170 190 210 230 t d(off) - nanoseconds t f i t d(off) r g = 10 ? ? , v ge = 15v v ce = 1250v i c = 24a i c = 12a
ixys reserves the right to change limits, test conditions, and dimensions. IXYH12N250CV1HV fig. 19. inductive turn-on switching times vs. collector current 0 10 20 30 40 50 6 8 10 12 14 16 18 20 22 24 i c - amperes t r i - nanoseconds 8 10 12 14 16 18 t d(on) - nanoseconds t r i t d(on) r g = 10 ? ? , v ge = 15v v ce = 1250v t j = 25oc t j = 150oc fig. 20. inductive turn-on switching times vs. junction temperature 0 10 20 30 40 50 60 25 50 75 100 125 150 t j - degrees centigrade t r i - nanoseconds 10 11 12 13 14 15 16 t d(on) - nanoseconds t r i t d(on) r g = 10 ? ? , v ge = 15v v ce = 1250v i c = 24a i c = 12a fig. 18. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 10 20 30 40 50 60 70 80 r g - ohms t r i - nanoseconds 0 10 20 30 40 50 60 t d(on) - nanoseconds t r i t d(on) t j = 150oc, v ge = 15v v ce = 1250v i c = 12a i c = 24a ixys ref: ixy_12n250cv1hv(4p-at628) 1-31-17
? 2017 ixys corporation, all rights reserved. IXYH12N250CV1HV fig. 21. diode forward characteristics 0 10 20 30 40 50 012345678910 v f (v) i f (a) t j = 150oc t j = 25oc fig. 22. reverse recovery charge vs. -di f /dt 0 1 2 3 4 5 300 500 700 900 1100 1300 1500 -di f / dt (a/s) q rr (c) i f = 24a 6a 12a t j = 150oc v r = 1200v fig. 23. reverse recovery current vs. -di f /dt 10 20 30 40 50 60 300 500 700 900 1100 1300 1500 di f /dt (a/s) i rr (a) 6a 12a i f = 24a t j = 150oc v r = 1200v fig. 24. reverse recovery time vs. -di f /dt 50 100 150 200 250 300 300 500 700 900 1100 1300 1500 -di f /dt (a/s) t rr (ns) 6a 12a i f = 24a t j = 150oc v r = 1200v fig. 26. maximum transient thermal impedance (diode) 0.1 1 0.0001 0.001 0.01 0.1 1 pulse width - seconds z (th)jc - k / w fig. 25. dynamic parameters q rr, i rr vs. junction temperature 0.6 0.7 0.8 0.9 1.0 1.1 0 20406080100120140160 t j (oc) k f k f i rr k f q rr v r = 1200v i f = 12a -dif/dt = 500a/s
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