CWDM3011P surface mount silicon p-channel enhancement-mode mosfet description: the central semiconductor CWDM3011P is a high current silicon p-channel enhancement-mode mosfet designed for high speed pulsed amplifier and driver applications. this mosfet has high current capability with beneficially low r ds(on) , and low gate charge. marking code: c3011p maximum ratings: (t a =25c) symbol units drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (steady state) i d 11 a maximum pulsed drain current, tp=10s i dm 50 a power dissipation p d 2.5 w operating and storage junction temperature t j , t stg -55 to +150 c thermal resistance ja 50 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =20v, v ds =0 100 na i dss v ds =30v, v gs =0 1.0 a bv dss v gs =0, i d =250a 30 v v gs(th) v gs =v ds , i d =250a 1.0 1.4 3.0 v v sd v gs =0, i s =2.6a 1.3 v r ds(on) v gs =10v, i d =11a 12 20 m r ds(on) v gs =4.5v, i d =8.5a 15 30 m c rss v ds =8.0v, v gs =0, f=1.0mhz 450 pf c iss v ds =8.0v, v gs =0, f=1.0mhz 3100 pf c oss v ds =8.0v, v gs =0, f=1.0mhz 320 pf q g(tot) v dd =15v, v gs =10v, i d =11a 80 nc q gs v dd =15v, v gs =10v, i d =11a 7.0 nc q gd v dd =15v, v gs =10v, i d =11a 10.1 nc t on v dd =15v, v gs =10v, i d =1.0a 49 ns t off r g =6.0, r l =15 330 ns features: ? low r ds(on) ? high current ? low gate charge applications: ? load/power switches ? dc-dc converter circuits ? power management soic-8 case r1 (6-august 2013) www.centralsemi.com
CWDM3011P surface mount silicon p-channel enhancement-mode mosfet lead code: 1) source 5) drain 2) source 6) drain 3) source 7) drain 4) gate 8) drain marking code: c3011p soic-8 case - mechanical outline pin configuration suggested mounting pads (dimensions in mm) www.centralsemi.com r1 (6-august 2013)
CWDM3011P surface mount silicon p-channel enhancement-mode mosfet typical electrical characteristics r1 (6-august 2013) www.centralsemi.com
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