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a2t21s260--12sr3 1 rf device data freescale semiconductor, inc. rf power ldmos transistor n--channel enhancement--mode lateral mosfet this 65 w rf power ldmos transistor is designed for cellular base station applications covering the frequency range of 2110 to 2170 mhz. 2100 mhz ? typical single--carrier w--cdma performance: v dd =28vdc, i dq = 1200 ma, p out = 65 w avg., input signal par = 9.9 db @ 0.01% probability on ccdf. frequency g ps (db) ? d (%) output par (db) acpr (dbc) irl (db) 2110 mhz 18.5 30.4 6.9 ?32.6 ?17 2140 mhz 18.6 30.3 6.8 ?32.8 ?13 2170 mhz 18.7 30.6 6.8 ?32.0 ?11 features ? greater negative gate--source voltage range for improved class c operation ? designed for digital predistortion error correction systems ? optimized for doherty applications document number: a2t21s260--12s rev. 0, 8/2015 freescale semiconductor technical data 2110?2170 mhz, 65 w avg., 28 v airfast rf power ldmos transistor a2t21s260--12sr3 figure 1. pin connections ni--780s--2l2l (top view) rf in /v gs vbw (1) vbw (1) 4 2 13 rf out /v ds 1. device cannot operate with v dd current supplied through pin 2 and pin 4. ? freescale semiconductor, inc., 2015. all rights reserved.
2 rf device data freescale semiconductor, inc. a2t21s260--12sr3 table 1. maximum ratings rating symbol value unit drain--source voltage v dss ?0.5, +65 vdc gate--source voltage v gs ?6.0, +10 vdc operating voltage v dd 32, +0 vdc storage temperature range t stg ?65 to +150 ? c case operating temperature range t c ?40 to +150 ? c operating junction temperature range (1,2) t j ?40 to +225 ? c cw operation @ t c =25 ? c derate above 25 ? c cw 346 3.1 w w/ ? c table 2. thermal characteristics characteristic symbol value (2,3) unit thermal resistance, junction to case case temperature 76 ? c, 65 w cw, 28 vdc, i dq = 1200 ma, 2140 mhz r ? jc 0.28 ? c/w table 3. esd protection characteristics test methodology class human body model (per jesd22--a114) 2 machine model (per eia/jesd22--a115) b charge device model (per jesd22--c101) iv table 4. electrical characteristics (t a =25 ? c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds =65vdc,v gs =0vdc) i dss ? ? 10 ? adc zero gate voltage drain leakage current (v ds =32vdc,v gs =0vdc) i dss ? ? 1 ? adc gate--source leakage current (v gs =5vdc,v ds =0vdc) i gss ? ? 1 ? adc on characteristics gate threshold voltage (v ds =10vdc,i d = 270 ? adc) v gs(th) 0.8 1.2 1.6 vdc gate quiescent voltage (v dd =28vdc,i d = 1200 madc, measured in functional test) v gs(q) 1.4 1.9 2.2 vdc drain--source on--voltage (v gs =10vdc,i d =2.7adc) v ds(on) 0.1 0.2 0.3 vdc functional tests (4) (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1200 ma, p out = 65 w avg., f = 2170 mhz, single--carrier w--cdma, iq magnitude clipping, input signal par = 9.9 db @ 0.01% probability on ccdf. acpr measured in 3.84 mhz channel bandwidth @ ? 5mhzoffset. power gain g ps 18.0 18.7 21.0 db drain efficiency ? d 29.0 30.6 ? % output peak--to--average ratio @ 0.01% probability on ccdf par 6.3 6.8 ? db adjacent channel power ratio acpr ? ?32.0 ?29.0 dbc input return loss irl ? ?11 ?8 db 1. continuous use at maximum temperature will affect mttf. 2. mttf calculator available at http:// www.freescale.com/rf/calculators. 3. refer to an1955 , thermal measurement methodology of rf power amplifiers. go to http://www.freescale.com/rf and search for an1955. 4. part internally matched both on input and output. (continued)
a2t21s260--12sr3 3 rf device data freescale semiconductor, inc. table 4. electrical characteristics (t a =25 ? c unless otherwise noted) (continued) characteristic symbol min typ max unit load mismatch (in freescale test fixture, 50 ohm system) i dq = 1200 ma, f = 2140 mhz, 12 ? sec(on), 12% duty cycle vswr 5:1 at 32 vdc, 290 w pulsed cw output power (0 db input overdrive from 208 w pulsed cw rated power) no device degradation typical performance (in freescale test fixture, 50 ohm system) v dd =28vdc,i dq = 1200 ma, 2110?2170 mhz bandwidth p out @ 1 db compression point, pulse p1db ? 208 ? w am/pm (maximum value measured at the p3db compression point across the 2110?2170 mhz bandwidth) ? ? ?20.9 ? ? vbw resonance point (imd third order intermodulation inflection point) vbw res ? 90 ? mhz gain flatness in 60 mhz bandwidth @ p out =65wavg. g f ? 0.3 ? db gain variation over temperature (?30 ? cto+85 ? c) ? g ? 0.015 ? db/ ? c output power variation over temperature (?30 ? cto+85 ? c) (1) ? p1db ? 0.013 ? db/ ? c table 5. ordering information device tape and reel information package a2t21s260--12sr3 r3 suffix = 250 units, 44 mm tape width, 13--inch reel ni--780s--2l2l 1. exceeds recommended operating conditions. see cw operation data in maximum ratings table.
4 rf device data freescale semiconductor, inc. a2t21s260--12sr3 figure 2. a2t21s260--12sr3 test circuit component layout d65935 a2t21s260--12s rev. 1 cut out area c1 v gg v dd v gg v dd c3 c4 r2 c2 c5 c6 r1 c10 c7 c11 c9 c15 c16 c8 c13 c12 c14 table 6. a2t21s260--12sr3 test circuit component designations and values part description part number manufacturer c1, c4, c6, c16 8.2 pf chip capacitors atc100b8r2ct500xt atc c2 1.0 pf chip capacitor atc100b1r0bt500xt atc c3, c5, c7, c8, c10, c13 10 uf chip capacitors c5750x7s2a106m230kb tdk c9, c14 470 uf, 100 v electrolytic capacitors mcgpr100v477m16x32-rh multicomp c11, c12 6.8 pf chip capacitors atc100b6r8ct500xt atc c15 0.1 pf chip capacitor atc600f0r1bt250xt atc r1, r2 2.2 ? , 1/4 w chip resistors crcw12062r20jnea vishay pcb rogers ro4350b, 0.020 ? , ? r =3.66 d65939 mtl
a2t21s260--12sr3 5 rf device data freescale semiconductor, inc. typical characteristics irl, input return loss (db) ?25 ?5 ?10 ?15 ?20 ?30 parc (db) ?3.4 ?2.6 ?2.8 ?3 ?3.2 ?3.6 2060 f, frequency (mhz) figure 3. single--carrier output peak--to--average ratio compression (parc) broadband performance @ p out = 65 watts avg. 18.1 19.1 19 18.9 ?34 32 31.5 31 30.5 ?29 ?30 ?31 ?32 ? d , drain efficiency (%) g ps , power gain (db) 18.8 18.7 18.6 18.5 18.4 18.3 18.2 2080 2100 2120 2140 2160 2180 2200 2220 30 ?33 acpr (dbc) figure 4. intermodulation distortion products versus two--tone spacing two--tone spacing (mhz) 10 ?75 0 ? 15 ? 30 ? 60 1 200 imd, intermodulatio n distortion (dbc) ? 45 figure 5. output peak--to--average ratio compression (parc) versus output power p out , output power (watts) ?1 ?3 35 0 ?2 ?4 output compression at 0.01% probability on ccdf (db) 20 50 65 95 10 40 35 30 25 20 15 ? d ? drain efficiency (%) 80 ? d parc acpr (dbc) ?50 ?20 ?25 ?30 ?40 ?35 ?45 19 g ps , power gain (db) 18.8 18.6 18.4 18.2 18 17.8 g ps ?5 1 acpr ? d parc g ps v dd =28vdc,p out =65w(avg.),i dq = 1200 ma single--carrier w--cdma, 3.84 mhz channel bandwidth input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf v dd =28vdc,p out = 162 w (pep) i dq = 1200 ma, two--tone measurements (f1 + f2)/2 = center frequency of 2140 mhz im5--u im7--l im7--u 100 ?1 db = 35 w im5--l im3--u im3--l ?2 db = 49 w ?3 db = 64 w input signal par = 9.9 d b @ 0.01% pr obabilit y on ccdf acpr irl v dd =28vdc,i dq = 1200 ma, f = 2140 mhz single--carrier w--cdma, 3.84 mhz channel bandwidth
6 rf device data freescale semiconductor, inc. a2t21s260--12sr3 typical characteristics 1 p out , output power (watts) avg. figure 6. single--carrier w--cdma power gain, drain efficiency and acpr versus output power ?10 ?20 10 22 0 60 50 40 30 20 ? d , drain efficiency (%) g ps , power gain (db) 20 18 10 400 10 ?60 acpr (dbc) 16 14 12 0 ?30 ?40 ?50 figure 7. broadband frequency response 9 27 f, frequency (mhz) v dd =28vdc p in =0dbm i dq = 1200 ma 21 18 15 gain (db) 24 12 1700 1850 2000 2150 2300 2450 2600 2750 2900 gain acpr ? d g ps 2110 mhz v dd =28vdc,i dq = 1200 ma single--carrier w--cdma, 3.84 mhz channel bandwidth, input signal par = 9.9 db @ 0.01% probab ility on ccdf 100 2170 mhz 2140 mhz 2110 mhz 2140 mhz 2170 mhz 2110 mhz 2140 mhz 2170 mhz -- 3 0 6 0 ?6 -- 1 2 -- 1 8 irl (db) -- 2 4 irl
a2t21s260--12sr3 7 rf device data freescale semiconductor, inc. table 7. load pull performance ? maximum power tuning ? class ab v dd =28vdc,i dq = 1181 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.87 ? j5.93 2.53 + j5.00 1.28 ? j3.01 18.5 55.3 337 58.4 ?19 2140 3.74 ? j6.26 3.18 + j5.38 1.32 ? j2.92 18.9 55.1 327 57.5 ?20 2170 5.24 ? j6.85 4.26 + j5.74 1.27 ? j2.92 18.9 55.2 328 56.6 ?20 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.87 ? j5.93 2.60 + j5.30 1.28 ? j3.18 16.3 56.0 397 60.1 ?24 2140 3.74 ? j6.26 3.35 + j5.73 1.35 ? j3.09 16.7 55.8 383 59.0 ?26 2170 5.24 ? j6.85 4.63 + j6.10 1.33 ? j3.13 16.7 55.8 384 58.5 ?26 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 8. load pull performance ? maximum drain efficiency tuning ? class ab v dd =28vdc,i dq = 1181 ma , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.87 ? j5.93 2.62 + j5.21 2.58 ? j1.61 21.3 53.2 208 70.0 ?30 2140 3.74 ? j6.26 3.31 + j5.58 2.27 ? j1.61 21.4 53.3 213 67.7 ?30 2170 5.24 ? j6.85 4.49 + j5.93 2.03 ? j1.59 21.5 53.4 220 68.5 ?31 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.87 ? j5.93 2.66 + j5.40 2.51 ? j2.06 18.9 54.3 268 70.6 ?35 2140 3.74 ? j6.26 3.50 + j5.81 2.45 ? j1.78 19.2 54.0 250 68.6 ?38 2170 5.24 ? j6.85 4.79 + j6.16 2.15 ? j1.87 19.2 54.3 270 69.2 ?37 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
8 rf device data freescale semiconductor, inc. a2t21s260--12sr3 p1db ? typical load pull contours ? 2140 mhz ? class ab ?0.5 ?1.5 imaginary ( ? ) 1.5 2 2.5 1 5 ?1 ?2.5 ?4 3 ?2 0 ?3 ?3.5 3.5 4 4.5 ?0.5 ?1.5 imaginary ( ? ) 1.5 2 2.5 1 5 ?1 ?2.5 ?4 3 ?2 0 ?3 ?3.5 3.5 4 4.5 ?0.5 ?1.5 imaginary ( ? ) 1.5 2 2.5 1 5 ?1 ?2.5 ?4 3 ?2 0 ?3 ?3.5 3.5 4 4.5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 8. p1db load pull output power contours (dbm) real ( ? ) ?0.5 ?1.5 imaginary ( ? ) 1.5 2 2.5 1 5 ?1 ?2.5 ?4 figure 9. p1db load pull efficiency contours (%) real ( ? ) figure 10. p1db load pull gain contours (db) real ( ? ) figure 11. p1db load pull am/pm contours ( ? ) real ( ? ) 3 ?2 0 ?3 ?3.5 3.5 4 4.5 p e 51.5 51 52 52.5 53 53.5 54 54.5 55 60 58 54 56 64 66 p e 52 62 54 56 52 18.5 21 20 p e 19 19.5 20.5 21.5 22 22.5 p e ?18 ?20 ?22 ?24 ?26 ?28 ?30 ?32 ?34
a2t21s260--12sr3 9 rf device data freescale semiconductor, inc. p3db ? typical load pull contours ? 2140 mhz ? class ab note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 12. p3db load pull output power contours (dbm) real ( ? ) ?5 0 ?2 imaginary ( ? ) 22.53 1 4 ?1 ?4 1.5 figure 13. p3db load pull efficiency contours (%) real ( ? ) figure 14. p3db load pull gain contours (db) real ( ? ) figure 15. p3db load pull am/pm contours ( ? ) real ( ? ) ?3 3.5 ?5 0 ?2 imaginary ( ? ) 22.53 1 4 ?1 ?4 1.5 ?3 3.5 ?5 0 ?2 imaginary ( ? ) 22.53 1 4 ?1 ?4 1.5 ?3 3.5 ?5 0 ?2 imaginary ( ? ) 22.53 1 4 ?1 ?4 1.5 ?3 3.5 p e 53.5 54 52.5 52 53 53.5 54 54.5 55 55.5 p e 52 54 58 60 62 64 56 66 68 62 52 54 17 p e 16.5 17.5 18 18.5 19 19.5 20 20.5 ?24 p e ?26 ?28 ?30 ?32 ?34 ?36 ?38 ?40
10 rf device data freescale semiconductor, inc. a2t21s260--12sr3 table 9. load pull performance ? maximum power tuning ? class c v dd =28vdc,v gsb =0.8vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max output power p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.40 ? j4.69 2.19 + j4.95 1.11 ? j3.01 15.1 55.3 341 56.8 ?30 2140 3.16 ? j5.17 2.83 + j5.43 1.15 ? j2.88 15.3 55.3 336 56.9 ?31 2170 4.24 ? j5.24 3.94 + j5.93 1.13 ? j2.89 15.2 55.3 338 56.5 ?31 f (mhz) z source ( ? ) z in ( ? ) max output power p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.40 ? j4.69 2.35 + j5.22 1.33 ? j3.21 13.2 55.9 393 61.8 ?37 2140 3.16 ? j5.17 3.15 + j5.73 1.17 ? j3.05 13.1 56.0 394 58.4 ?38 2170 4.24 ? j5.24 4.50 + j6.23 1.15 ? j3.05 13.1 56.0 396 58.9 ?37 (1) load impedance for optimum p1db power. (2) load impedance for optimum p3db power. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. table 10. load pull performance ? maximum drain efficiency tuning ? class c v dd =28vdc,v gsb =0.8vdc , pulsed cw, 10 ? sec(on), 10% duty cycle f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p1db z load (1) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.40 ? j4.69 1.98 + j4.94 2.73 ? j2.04 16.4 53.5 223 69.7 ?39 2140 3.16 ? j5.17 2.59 + j5.44 2.50 ? j1.84 16.4 53.4 220 68.1 ?40 2170 4.24 ? j5.24 3.61 + j5.98 2.33 ? j1.78 16.3 53.5 226 69.0 ?39 f (mhz) z source ( ? ) z in ( ? ) max drain efficiency p3db z load (2) ( ? ) gain (db) (dbm) (w) ? d (%) am/pm ( ? ) 2110 2.40 ? j4.69 2.20 + j5.20 2.96 ? j2.28 14.2 54.0 250 69.6 ?47 2140 3.16 ? j5.17 2.94 + j5.73 2.73 ? j1.99 14.2 53.9 247 68.1 ?49 2170 4.24 ? j5.24 4.16 + j6.27 2.56 ? j1.69 14.2 53.8 241 69.3 ?50 (1) load impedance for optimum p1db efficiency. (2) load impedance for optimum p3db efficiency. z source = measured impedance presented to the input of th e device at the package reference plane. z in = impedance as measured from gate contact to ground. z load = measured impedance presented to the output of the device at the package reference plane. input load pull tuner and test circuit device under test z source z in z load output load pull tuner and test circuit
a2t21s260--12sr3 11 rf device data freescale semiconductor, inc. p1db ? typical load pull contours ? 2140 mhz ? class c 22.5 3 1 4 1.5 3.5 22.5 3 1 4 1.5 3.5 22.5 3 1 4 1.5 3.5 ?4 ?1 ?2 ?1.5 ?3 ?3.5 ?2.5 ?4 ? 1 ?2 ?1.5 ?3 ?3.5 ?2.5 ?4 ?1 ?2 ?1.5 ?3 ?3.5 ?2.5 imaginary ( ? ) imaginary ( ? ) imaginary ( ? ) note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 16. p1db load pull output power contours (dbm) real ( ? ) ?4 ? 1 ?2 imaginary ( ? ) 22.5 3 1 4 ?1.5 ?3 ?3.5 1.5 figure 17. p1db load pull efficiency contours (%) real ( ? ) figure 18. p1db load pull gain contours (db) real ( ? ) figure 19. p1db load pull am/pm contours ( ? ) real ( ? ) 3.5 ?2.5 52.5 52 53.5 p e 53 54 54.5 55 52 51.5 52 54 56 58 60 62 p e 64 66 68 52 54 56 14.5 14 15 15.5 16 16.5 p e 15 ?30 ?32 p e ?34 ?36 ?38 ?40 ?42 ?44
12 rf device data freescale semiconductor, inc. a2t21s260--12sr3 p3db ? typical carrier load pull contours ? 2140 mhz ? class c ?0.5 ?1.5 imaginary ( ? ) 1.5 2 2.5 1 5 ?1 ?2.5 ?4 3 ?2 0 ?3 ?3.5 3.5 4 4.5 ?0.5 ?1.5 imaginary ( ? ) 1.5 2 2.5 1 5 ?1 ?2.5 ?4 3 ?2 0 ?3 ?3.5 3.5 4 4.5 ?0.5 ?1.5 imaginary ( ? ) 1.5 2 2.5 1 5 ?1 ?2.5 ?4 3 ?2 0 ?3 ?3.5 3.5 4 4.5 note: = maximum output power = maximum drain efficiency p e gain drain efficiency linearity output power figure 20. p3db load pull output power contours (dbm) real ( ? ) ?0.5 ?1.5 imaginary ( ? ) 1.5 2 2.5 1 5 ?1 ?2.5 ?4 figure 21. p3db load pull efficiency contours (%) real ( ? ) figure 22. p3db load pull gain contours (db) real ( ? ) figure 23. p3db load pull am/pm contours ( ? ) real ( ? ) 3 ?2 0 ?3 ?3.5 3.5 4 4.5 52.5 p e 52 53 53.5 54 54.5 55 55.5 54 56 52 p e 54 52 56 58 56 58 60 62 64 66 68 p e 13.5 13 14 14.5 13 12.5 14 p e ?36 ?38 ?40 ?42 ?44 ?46 ?48 ?50 ?52
a2t21s260--12sr3 13 rf device data freescale semiconductor, inc. package dimensions
14 rf device data freescale semiconductor, inc. a2t21s260--12sr3
a2t21s260--12sr3 15 rf device data freescale semiconductor, inc. product documentation, software and tools refer to the following resources to aid your design process. application notes ? an1955: thermal measurement methodology of rf power amplifiers engineering bulletins ? eb212: using data sheet impedances for rf ldmos devices software ? electromigration mttf calculator ? rf high power model ? s2p file development tools ? printed circuit boards to download resources specific to a given part number: 1. go to http://www .freescale.com/rf 2. search by part number 3. click part number link 4. choose the desired resource from the drop down menu revision history the following table summarizes revisions to this document. revision date description 0 aug. 2015 ? initial release of data sheet
16 rf device data freescale semiconductor, inc. a2t21s260--12sr3 information in this document is provided solely to enable system and software implementers to use freescale products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. freescale reserves the right to make changes without further notice to any products herein. freescale makes no warranty, representation, or guarantee regarding the suitability of its products fo r any particular purpose, nor does freescale assume any liability arising out of the application or u se of any product or circuit, and specifically disclaims any and all li ability, including wit hout limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. all operating parameters, including ?typicals,? must be validated for each customer application by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/salestermsandconditions. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. airfast is a trademark of freescale semiconductor, inc. all other product or service names are the property of their respective owners. e 2015 freescale semiconductor, inc. how to reach us: home page: freescale.com web support: freescale.com/support document number: a2t21s260--12s rev. 0, 8/2015

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