, [i nc. 20 stern ave. springfield, new jersey 07081 u.s.a. silicon pnp power transistor telephone: (973) 376-2922 (212) 227-6005 fax: (973) 376-8960 2SA1352 description ? high collector-emitter breakdown voltage- v(br)ceo= -200v (min) ? complement to type 2sc3416 applications ? designed for color tv chroma output, high-voltage driver applications. absolute maximum ratings(ta=25r) pin (.emitter 2,collector 3. base to-126 package symbol vcbo vceo vebo ic i cm pc tj tstg parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current-continuous collector current-peak collector power dissipation @ ta=25'c total power dissipation @ tc=25'c junction temperature storage temperature range value -200 -200 -5.0 -0.1 -0.2 1.2 5 150 -55-150 unit v v v a a w r ?c h- f i \ h - t d-? ?* q ? b? a i 1 g * i i i 1 ? * 11 1 " ' 2 3 dim a b r d f g h j k 0 r v "r q t v a-... d m min 10.70 7.70 2.60 lk&6 3.10 4.48 2.00 1.35 15.30 3,70 0.40 1.17 ~*1 t a 1 ? i k. ~* m max 10.95 7.90 2,50 0.86 3.30 4.68 2.20 1.55 16,30 3..90 0.60 1.37 :p- r*"j *-r nj semi-coiuliictors reserves the right to change test conditions, parameter limits and package dimensions \vithout notice. information furnished hy n.i semi-conductors is believed to he both accurate and reliable at the time of going to press. however, n.i semi-conductors assumes no responsibility for any errors or omissions discovered in its use. n.i semi-conductors encourages customers to verify that datasheets are current before placing orders. qualify semi-conductors
silicon pnp power transistor 2SA1352 electrical characteristics tc=25c unless otherwise specified symbol v(br)cbo v(br)ceo v(br)ebo vce(sat) vse(sat) icbo iebo hfe fj cob parameter collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter saturation voltage collector cutoff current emitter cutoff current dc current gain current-gain ? bandwidth product output capacitance conditions lc=-10u a; ie=0 lc=-1ma; rbe= !e=-10u a; lc=0 lc= -20ma; ib= -2ma lc= -20ma; ib= -2ma vcb=-150v; ie=0 veb= -4v; lc= 0 lc=-10ma;vce=-40v lo=-10ma;vce=-30v !e= 0; vcb= -30v; f= 1.0mhz min -200 -200 -5 40 typ, 70 1.7 max -0.6 -1.0 -0.1 -0.1 320 unit v v v v v ua u a mhz pf classifications c 40-80 d 60-120 e 100-200 f 160-320
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