VS-FCSP05H40TR www.vishay.com vishay semiconductors revision: 04-jul-11 1 document number: 94491 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 flipky ? , chip scale package schottky barrier rectifier, 0.5 a features ?ultra low v f to footprint area ? very low profile (< 0.6 mm) ? low thermal resistance ? supplied tested and on tape and reel ? compliant to rohs directive 2002/95/ec applications ? reverse polarity protection ? current steering ? freewheeling ? flyback ?oring description vishays flipky ? product family utilizes wafer level chip scale packaging to deliver schottky diodes with the lowest v f to pcb footprint area in industry. the three pad 0.9 mm x 1.2 mm devices ca n deliver up to 0.5 a and occupy only 1.08 mm 2 of board space. the anode and cathode connections are made through solder bump pads on one side of the silicon enab ling designers to strategically place the diodes on the pcb. this design not only minimizes board space but also reduce s thermal resistance and inductance, which can improve overall circuit efficiency. typical applications include hand-held, portable equipment such as cell phones, mp3 players, bluetooth, gps, pdas, and portable hard disk drive s where space savings and performance are crucial. product summary i f(av) 0.5 a v r 40 v v f at i f 0.42 v i rm max. at 25 c 10 a i rm max. at 125 c 2 ma t j max. 150 c e as 5 mj flipky ? major ratings and characteristics symbol characteristics max. units v rrm 40 v i f(av) rectangular waveform 0.5 a i fsm 190 v f 0.5 a pk , t j = 125 c 0.42 v t j - 55 to 150 c voltage ratings parameter symbol VS-FCSP05H40TR units maximum dc reverse voltage v r 40 v maximum working peak reverse voltage v rwm
VS-FCSP05H40TR www.vishay.com vishay semiconductors revision: 04-jul-11 2 document number: 94491 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 note (1) pulse width < 300 s, duty cycle < 2 % notes (1) thermal runaway condition for a diode on its own heatsink (2) mounted on minimum footprint pcb absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) 50 % duty cycle at t pcb = 114 c, rectangular waveform 0.5 a maximum peak one cycle non-repetitive surge current at 25 c i fsm 5 s sine or 3 s rect. pulse following any rated load condition and with rated v rrm applied 190 10 ms sine or 6 ms rect. pulse 10 non-repetitive avalanche energy e as t j = 25 c, i as = 2.0 a, l = 5.0 mh 5mj repetitive avalanche current i ar current decaying linear ly to zero in 1 s frequency limited by t j maximum v a = 1.5 x v r typical 0.5 a electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions typ. max. units maximum forward voltage drop see fig. 1 v fm (1) 0.5 a t j = 25 c 0.48 0.52 v 1 a 0.54 0.58 0.5 a t j = 125 c 0.38 0.42 1 a 0.46 0.50 maximum reverse leakage current see fig. 2 i rm (1) t j = 25 c v r = rated v r 110 a v r = 20 v 0.2 0.5 v r = 10 v 0.08 0.25 v r = 5 v 0.05 0.15 t j = 125 c v r = rated v r 0.5 2 ma v r = 20 v 0.2 1 v r = 10 v 0.15 0.8 v r = 5 v 0.125 0.5 maximum junction capacitance c t v r = 5 v dc (test signal range 100 khz to 1 mhz), 25 c -90pf maximum voltage rate of charge dv/dt rated v r - 10 000 v/s thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j (1) , t stg - 55 to 150 c typical thermal resistance, junction to pcb r thjl (2) dc operation 35 c/w maximum thermal resistance, junction to ambient r thja 150 dp tot dt j ------------- 1 r thja -------------- <
VS-FCSP05H40TR www.vishay.com vishay semiconductors revision: 04-jul-11 3 document number: 94491 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - maximum forward voltage drop characteristics (per leg) fig. 2 - typical values of reverse current vs. reverse voltage (per leg) fig. 3 - typical junction capacitance vs. reverse voltage (per leg) fig. 4 - maximum allowable case temperature vs. average forward current (per leg) fig. 5 - forward power lo ss characteristics (per leg) fig. 6 - maximum non-repetitive surge current (per leg) note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at 80 % v r applied 0.1 1 10 i f - instantaneous forward current (a) v fm - forward voltage drop (v) 0.4 0.6 0. 8 1.0 1.2 0.2 t j = 150 c t j = 125 c t j = 25 c 1 10 100 0.1 0.01 10 000 1000 i r - reverse current (a) v r - reverse voltage (v) 10 51520 40 25 30 35 0 t j = 150 c t j = 125 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c 10 100 1000 c t - junction capacitance (pf) v r - reverse voltage (v) 10 5152025 40 35 30 0 t j = 25 c 60 8 0 100 120 140 160 allowable case temperature (c) i f(av) - average forward current (a) 0.4 0.2 0.6 0. 8 0 dc sq u are w a v e (d = 0.50) 8 0 % v r applied see note (1) d = 3/4 d = 1/2 d = 1/3 d = 1/4 d = 1/5 0 0.3 0.2 0.1 0.4 average power loss (w) i f(av) - average forward current (a) 0.2 0.4 0. 8 0.6 0 dc rms limit d = 0.20 d = 0.25 d = 0.33 d = 0.50 d = 0.75 1 10 100 1000 i fsm - non-repetitive surge current (a) t p - square wave pulse duration (s) 100 1000 10 000 10 at any rated load condition and with rated v rrm applied following surge
VS-FCSP05H40TR www.vishay.com vishay semiconductors revision: 04-jul-11 4 document number: 94491 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 7 - unclamped inductive test circuit c u rrent monitor high-speed s w itch d.u.t. r g = 25 + free w heel diode v d = 25 v l irfp460 40hfl40s02 links to related documents dimensions www.vishay.com/doc?95049 part marking information www.vishay.com/doc?95060 packaging information www.vishay.com/doc?95062 spice model www.vishay.com/doc?95318
document number: 95049 for technical questi ons concerning discrete products, contact: diodestech@vishay.com www.vishay.com revision: 07-sep-09 for technical questi ons concerning modul e products, contact: indmodules@vishay.com 1 flipky ? 0.5 a/0.75 a outline dimensions vishay high power products dimensions in millimeters notes ? dimensioning and tolerancing per asme y14.5m-1994 ? controlling dimension: millimeter assignments 1 = cathode 2 = cathode 3 = anode 0.500 0.400 0.200 21 3 0.700 0.071 0.914 1.244 0.520 0.460 0.125 0.105 1.244 0.300 0.395 0.355 pi n 3 anode 0.450 0.250 0.350 0.700 pi n i p e d o h t a c 2 n 1 cathode 0.350 recommended footprint 0.500 0.173 0.300 0.300
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