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! ! " ! 1 10 100 1000 0.1 1 10 10 0 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 40s pulse width t = 25c c 1 10 100 1000 0.1 1 10 10 0 d ds a -i , drain-to-source current (a) -v , drain-to-source voltage (v) vgs top - 15v - 10v - 8.0v - 7.0v - 6.0v - 5.5v - 5.0v bottom - 4.5v -4.5v 40s pulse width t = 175c c 1 10 100 1000 45678910 t = 25c j gs d a -i , drain-to-source current (a) -v , gate-to-source voltage (v) t = 175c v = -50v 40s pulse width ds j 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction temperature (c) r , drain-to-source on resistance ds(on) (normalized) a v = -10v gs i = -35a d

#$ %"&' ( !& (%& %& % )*& 0 1000 2000 3000 4000 5000 6000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 40 80 120 160 20 0 g gs a -v , gate-to-source voltage (v) q , total gate charge (nc) v = -80v v = -50v v = -20v ds ds ds for test circuit see figure 13 i = -21a d 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2. 4 t = 25c j v = 0v gs sd sd a -i , reverse drain current (a) -v , source-to-drain voltage (v) t = 175c j 1 10 100 1000 1 10 100 100 0 operation in this area limited by r ds(on) 10ms a -i , drain current (a) -v , drain-to-source voltage (v) ds d 10s 100s 1ms t = 25c t = 175c single pulse c j
%*!& %*!& +," #$ -"",! . /0 #$ 1 ! 0.1 % 4 4 &m&& + - v ds 9 0% 1 0% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 175 0 10 20 30 40 50 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
( !& 1( !&+," #$ ',!-& q g q gs q gd v g charge 2 d.u.t. v d s i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 3 .,+," 3 ., t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v 0 400 800 1200 1600 2000 25 50 75 100 125 150 17 5 j e , single pulse avalanche energy (mj) as a starting t , junction temperature (c) i top -8.6a -15a bottom -21a d

p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop r e-applied v oltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 4 ? -(%

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data and specifications subject to change without notice. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/04 lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14 .09 (.555) 13 .47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copac k 1- gate 2- collector 3- emitter 4- collector

dimensions are shown in millimeters (inches)

example: in the assembly line "c" t his is an ir f1010 lot code 1789 as s e mb le d on ww 19, 1997 part numbe r as s e mb l y lot code date code year 7 = 1997 line c week 19 logo rectifier int e rnat ional note: "p" in assembly line position indicates "lead-free"
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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