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ct micro rev 3 proprietary & confidential page 1 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er features ? ?? ? high speed 1mbit/s ? ?? ? high isolation voltage between input and output (viso=5000 vrms ) ? ?? ? guaranteed ctr performance from 0c to 70c ? ?? ? wide operating temperature range of -55c to 100c ? ?? ? regulatory approvals ul - ul1577 (e364000) vde - en60747-5-5(vde0884-5) cqc ? gb4943.1, gb8898 iec60065, iec60950 applications ? ?? ? line receivers ? ?? ? telecommunication equipment ? ?? ? high speed logic ground isolation ? ?? ? feedback loop in switch-mode power supplies ? ?? ? home appliances package outline schematic CTW135 / ctw 136 pin 7 not connected for ctw4502/ctw4503 note: different bending options available. see pack age dimension. description the CTW135, ctw136, ctw4502, and ctw4503 devices each consist of an infrared emitting diode, optically coupled to a high speed photo detector transistor. a separate connection for the photodiod e bias and output-transistor collector increase the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector capacitance of the input transis tor. the device is packaged in an 8-pin wide body dip and also available in surface mount option.
ct micro rev 3 proprietary & confidential page 2 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er absolute maximum rating at 25 o c symbol parameters ratings units notes v iso isolation voltage *1 5000 v rms t opr operating temperature -55 ~ +100 o c t stg storage temperature -55 ~ +125 o c t sol soldering temperature *2 260 o c emitter i f forward current 25 ma i fp peak forward current (50% duty, 1ms p.w) 50 ma i f(trans) peak transient current ( 1 s p.w,300pps) 1 a v r reverse voltage 5 v p d power dissipation 40 mw detector p d power dissipation 100 mw v ebr emitter-base reverse voltage 5 v i b base current 5 ma i o(avg) average output current 8 ma i o (peak) peak output current 16 ma v o output voltage -0.5 to 20 v v cc supply voltage -0.5 to 30 v
ct micro rev 3 proprietary & confidential page 3 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er electrical characteristics t a = 0 - 70c (unless otherwise specified). typical v alues are measured at t a = 25 0 c and v cc =5v emitter characteristics symbol parameters test conditions min typ max units notes v f forward voltage if = 16ma - 1.45 1.6 v v r reverse voltage ir = 10 a 5.0 - - v v f / t a temperature coefficient of forward voltage if =16ma - -1.8 - mv/c detector characteristics symbol parameters test conditions min typ max units notes i oh logic high output current i f =0ma, v o =v cc =5.5v, t a =25c - 0.001 0.5 a i f =0ma, v o =v cc =15v, t a =25c - 0.01 1 i f =0ma, v o =v cc =15v - - 50 i ccl logic low supply current i f =16ma, v o =open, v cc =15v - 140 200 a i cch logic high supply current i f =0ma, v o =open, v cc =15v, t a =25c - 0.01 1 a if=0ma, vo=open, vcc=15v - - 2
ct micro rev 3 proprietary & confidential page 4 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er electrical characteristics t a = 0 - 70c (unless otherwise specified). typical v alues are measured at t a = 25 0 c and v cc =5v transfer characteristics symbol parameters test conditions min typ max units notes ctr current transfer ratio CTW135 ctw4502 i f =16ma, v o =0.4v,v cc =4.5v, t a =25c 7 - 50 % ctw136 ctw4503 19 - 50 CTW135 ctw4502 i f =16ma, v o =0.5v, v cc =4.5v 5 - - ctw136 ctw4503 15 - - v ol logic low output voltage CTW135 ctw4502 i f =16ma,i o =1.1ma,v cc =4.5v, t a =25c - 0.18 0.4 v ctw136 ctw4503 i f =16ma, i o =3ma, v cc =4.5v, t a =25c - 0.18 0.4 CTW135 ctw4502 i f =16ma, i o =0.8ma, v cc =4.5v - - 0.5 ctw136 ctw4503 i f =16ma, i o =2.4ma, v cc =4.5v - - 0.5 electrical characteristics
ct micro rev 3 proprietary & confidential page 5 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er t a = 0 - 70c (unless otherwise specified). typical v alues are measured at t a = 25 0 c and v cc =5v switching characteristics symbol parameters test conditions min typ max units notes t phl propagation delay time logic high to logic low CTW135 ctw4502 r l =4.1k , t a= 25c - 0.35 1.5 s r l =4.1k - - 2.0 ctw136 ctw4503 r l =1.9k , t a =25c - 0.35 0.8 r l =1.9k - - 1.0 t plh propagation delay time logic low to logic high CTW135 ctw4502 r l =4.1k , t a= 25c - 0.5 1.5 s r l =4.1k - - 2.0 ctw136 ctw4503 r l =1.9k , t a =25c - 0.3 0.8 r l =1.9k - - 1.0 cm h common mode transient immunity at logic high CTW135 i f = 0ma , v cm =10vp-p, r l =4.1k , t a =25c 1,000 - - v/s ctw136 i f = 0ma , v cm =10vp-p, r l =1.9k , t a =25c 1,000 - - ctw4502 ctw4503 i f = 0ma , v cm =1500vp-p, r l =1.9k , t a =25c 15,000 20,000 cm l common mode transient immunity at logic low CTW135 i f = 16ma , v cm =10vp-p, r l =4.1k , t a =25c 1,000 - - v/s ctw136 i f = 16ma , v cm =1500vp-p, r l =1.9k , t a =25c 1,000 - - ctw4502 ctw4503 i f = 16ma , v cm =1500vp-p, r l =1.9k , t a =25c 15,000 20,000
ct micro rev 3 proprietary & confidential page 6 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er typical characteristic curves
ct micro rev 3 proprietary & confidential page 7 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er
ct micro rev 3 proprietary & confidential page 8 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er test circuits
ct micro rev 3 proprietary & confidential page 9 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er test circuits
ct micro rev 3 proprietary & confidential page 10 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er package dimension dimensions in mm unless otherwise stated standard dip ? through hole surface mount lead forming (sl type)
ct micro rev 3 proprietary & confidential page 11 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er recommended solder mask dimensions in mm unless otherwise stated device marking ct : denotes ?ct micro? 135 : product number (135, 136, 4502, 4503) v : vde option y : fiscal year ww : work week k : production code ct 135 vywwk ct 4502 vywwk
ct micro rev 3 proprietary & confidential page 12 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er ordering information ctw13x(v)(y)(z) or ctw450x(v)(y)(z) x = part no. (5,6 for ctw13x series), (2,3 for ctw4 50x series) v = vde option ( v or none) y = lead form option (sl, or none) z = tape and reel option (t1, t2 or none) option description quantity none standard 8 pin dip 40 units/tube sl(t1) surface mount (low profile) lead forming? with option 1 taping 750 units/reel sl(t2) surface mount (low profile) lead forming? with option 2 taping 750 units/reel
ct micro rev 3 proprietary & confidential page 13 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er carrier tape specifications dimensions in mm unless otherwise stated option sl(t1) option sl(t2)
ct micro rev 3 proprietary & confidential page 14 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er reflow profile profile feature pb-free assembly profile temperature min. (tsmin) 150c temperature max. (tsmax) 200c time (ts) from (tsmin to tsmax) 60-120 seconds ramp-up rate (t l to t p ) 3c/second max. liquidous temperature (t l ) 217c time (t l ) maintained above (t l ) 60 ? 150 seconds peak body package temperature 260c +0c / -5c time (t p ) within 5c of 260c 30 seconds ramp-down rate (t p to t l ) 6c/second max time 25c to peak temperature 8 minutes max.
ct micro rev 3 proprietary & confidential page 15 apr, 2016 CTW135, ctw136, ctw4502, ctw4503 9mm, 1mbit/s high speed phototransistor optocoupl er disclaimer ct micro reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ct micro does not assume any liability arising out of the application or use of any produc t or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. ___________________________________________________ ___________________________________ ct micro are not authorized for use as critical com ponents in life support devices or systems without express written approval of ct micr o international corporation. 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain li fe, or (c) whose failure to perform when properly used in accordance with instruction for use provided in the labelling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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