sot-363 jiangsu changjiang electron ics technology co., ltd sot-363 power management mosfets-schottky CJ7203KDW n -channel mosfet and schottky barrier diode feature z z z application z z maximum ratings (t a =25 unless otherwise noted) *repetitive rating pluse width limited by j unction temperature. symbol parameter value unit 1-mosfet v ds drain-source voltage 60 v v gs gate-source v o lt ag e 20 v i d continuous drain current 0.34 a i dm * pulse dr ain c u rrent 1.36 a sc hottk y ba rrie r diode v rrm peak re petitiv e revers e v o lt age 40 v v r dc blocking voltage 4 0 v i o average rectified forward current 0.3 5 a po w e r dissip a tio n , t e mp eratu r e an d t h e r m al resist an c e p d power dissipation 0.15 w r ja t hermal resist ance from jun c tion to ambie n t 833 / w t j junction temperature 150 t stg storage temperature -55~+150 t l lead temperature for soldering purposes(1 /8? ? from case for 10 s) 260 www.cj-elec.com 1 a-4 , mar ,2016 equivalent circuit marking v (br)dss /vr r ds(on) max i d /i o 60v 5 @10v 340ma ? 5.3 @5v 40v / 350m a ? load switch for portable devices dc/dc converter high density cell design for low r ds on high saturation current capability low forward voltage drop guard ring construction fo r transient protection negligible reverse recovery time low capacitance z z z
www.cj-elec.com 2 a-4,mar,2016 mosfet electrical characteristics a t =25 unless otherwise specified para mete r sy mbol te s t conditi o n min ty p max units static characteristics drain-source breakdown voltage v ds v gs = 0v, i d =250a 60 v gate threshold voltag e* v gs(th) v ds =v gs , i d =1ma 1 1.3 2.5 v zero gate voltage dr ain current i dss v ds =48v,v gs = 0v 1 a i gss1 v gs =20v, v ds = 0v 10 a i gss2 v gs =10v, v ds = 0v 200 na gate ?source leakage curre nt i gss3 v gs =5v, v ds = 0v 100 na v gs = 4.5v, i d =200ma 1.1 5.3 ? drain-source on-resistance* r ds(on) v gs =10v,i d =500ma 0.9 5 ? diode forward voltage v sd v gs =0v, i s =300ma 1.5 v recovered charge q r v gs =0v,i s =300ma,v r =25v, dl s /d t =-100a/s 30 nc dynamic characteris tics** input capacitance c iss 40 pf output capacitance c oss 30 pf reverse transfer capacitance c rss v ds =10v,v gs =0v,f =1 mhz 10 pf switching characteristics** turn-on delay time t d(on) 10 ns turn-off delay time t d(off) v gs =10v,v dd =50v,r g =50 ? , r gs =50 ? , r l =250? 15 ns reverse recovery time t rr v gs =0v,i s =300ma,v r =25v, dl s /d t =-100a/s 30 ns gate-sourc e zener diode gate-source breakdown voltage bv gso i gs =1ma (open drain) 21.5 30 v notes : *pulse test : pulse width 300s, duty cycl e 2%. **these parameters have no way to verify. 40 reverse voltage v (br) i r = 100 a v v r =3 0v reverse current i r 5 a i f =20ma 0.37 forwa rd voltage v f i f =200ma 0.6 v tot al capacitance c tot v r =0v,f=1mhz 50 pf reverse recovery tim e t rr i f= i r = 200ma, i rr =0 .1 i r , r l =100? 10 ns 1-mosfet schottky barrier diode
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1e-3 0.01 0.1 1 2 012345 0.0 0.4 0.8 1.2 0 300 600 900 1200 1500 0 1 2 3 4 5 024681 0 0 2 4 6 8 10 02468 0.0 0.4 0.8 1.2 25 50 75 100 125 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t a =25 pulsed pulsed t a =100 v sd i s ?? t a =25 source current i s (a) source to drain voltage v sd (v) v gs =5v,6v,7v,10v v gs =4v v gs =3v output characteristics drain current i d (a) drain to source voltage v ds (v) t a =25 pulsed v gs =10v v gs =4.5v t a =25 pulsed on-resistance r ds(on) ( ? ) drain current i d (ma) i d ?? r ds(on) on-resistance r ds(on) ( ? ) gate to source voltage v gs (v) v gs ?? r ds(on) i d =500ma v ds =3v pulsed drain current i d (a) gate to source voltage v gs (v) transfer characteristics t a =100 t a =25 i d =250ua threshold voltage threshold voltage v th (v) junction temperature t j ( ) 7 \ s l f d o & k d u d f w h u l v w l f v n-channel characteristics www.cj-elec.com 3 a-4,mar,2016
0 5 10 15 20 1 10 100 0 100 200 300 400 500 600 700 800 0.1 1 10 100 1000 0 5 10 15 20 25 30 35 40 0.1 1 10 100 1000 t a =25 o c f=1mhz c a p aci t a n ce c h aracteristics reverse voltage v r (v) capacitance between terminals c t (pf) forward ch aract eristics t a = 1 0 0 o c t a =2 5 o c forward current i f (ma) forward voltage v f (mv) reverse characteri s tics t a =100 o c t a =25 o c reverse current i r (ua) reverse voltage v r (v) 7 \ s l f d o & k d u d f w h u l v w l f v schottky characteristics www.cj-elec.com 4 a-4,mar,2016
min max min max a 0.900 1.100 0.035 0.043 a1 0.000 0.100 0.000 0.004 a2 0.900 1.000 0.035 0.039 b 0.150 0.350 0.006 0.014 c0 . 0.150 0.00 0.006 d 2.000 2.200 0.079 0.087 e 1.150 1.350 0.045 0.053 e1 2.150 2.4 0.085 0.09 e e1 1.200 1.400 0.047 0.055 l l1 0.260 0.460 0.010 0.018 0 8 0 8 0.525 ref 0.021 ref symbol dimensions in millimeters dimensions in inches 0.650 typ 0.026 typ
5a-4,mar,2016
6a-4,mar,2016
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