2 emitter 3 1 base sotC23 darlington amplifier transistors maximum r atings rating symbol value unit collectorCemitter voltage v ces 30 vdc collectorCbase voltage v cbo 30 vdc emitterCbase voltage v ebo 10 vdc collector current continuous i c 300 madc thermal characteristics characteristic symbol max unit t otal device dissipation frC 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w t otal device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg C55 to +150 c device marking mmbta13l t1 = 1m; mmb t a14 l t1 = 1n; electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collectorCemitter breakdown voltage v (br)ceo 30 vdc (i c = 100 adc, v be = 0) collector cutoff current i cbo 100 nadc ( v cb = 30vdc, i e = 0) emitter cutoff current i ebo 100 nadc ( v eb = 10vdc, i c = 0) 1. frC5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. collector z mmbta13lt1 1m 3000/t ape & reel device marking shipping mmbta14lt1 1n 3000/t ape & reel ordering information we declare that the material of product compliance with rohs requirements. mm bta1xlt1 201 2-11 w i l l a s e l e ct ro ni c co rp .
electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics (3) dc current gain h fe CC (i c = 10 madc, v ce = 5.0 vdc) mmbta13 5,000 mmbta14 10,000 (i c = 100madc, v ce = 5.0vdc) mmbta13 10,000 mmbta14 20,000 collectorCemitter saturation voltage v ce(sat) CC 1.5 vdc (i c = 100 madc, i b = 0.1 madc) baseCemitter on voltage v be 2.0 vdc (i c = 100madc, v ce = 5.0vdc) smallCsignal characteristics current C gainCbandwidth product(4) f t 125 mhz (v ce = 5.0 vdc, i c = 10madc, f = 100 mhz) 3. pulse test: pulse width < 300 s, duty cycle < 2.0%. 4. f t = |h f e | *f test . r s i n e n ideal transistor figure 1. transistor noise model darlington amplifier transistors mm bta1xlt1 201 2-11 willas electronic corp.
noise characteristics (v ce = 5.0 vdc, t a = 25c) f, frequency (hz) figure 2. noise voltage f, frequency (hz) figure 3. noise current e n , noise voltage (nv) bandwidth = 1.0 hz r s 0 10 a 100 a i c =1.0ma i n , noise current (pa) bandwidth = 1.0 hz i c =1.0ma 100 a 500 200 100 50 20 10 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 2 0k 50k 100k 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 a ~ ~ 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k 100k 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 500 200 100 50 20 10 5.0 r s , source resistance (k ? ) figure 4. total wideband noise voltage r s , source resistance (k ? ) figure 5. wideband noise figure bandwidth = 10 hz to 15.7 khz i c = 10 a 100 a 1.0 ma 200 100 70 50 30 20 10 bandwidth = 10 hz to 15.7 khz 10 a 100 a i c = 1.0 ma 1.0 2.0 5.0 10 20 50 100 200 500 1.0k nf, noise figure (db) v t , total wideband noise voltage (nv) darlington amplifier transistors mm bta1xlt1 2012-11 willas electronic corp.
c ibo v r , reverse voltage (volts) figure 6. capacitance c, capacitance (pf) 0.04 0.1 0.2 0.4 1.0 1.2 4.0 10 20 40 20 10 7.0 5.0 3.0 2.0 c obo i c , collector current (ma) figure 18. temperature coefficients c , collector current (ma) figure 17. on voltages v, voltage ( volts ) t j = 25c +25c to +125c * r vc for v ce(sat) C55c to +25c +25c to +125c C55c to +25c vb for v be 1.6 1.4 1.2 1.0 0.8 0.6 C1.0 C2.0 C3.0 C4.0 C5.0 C6.0 200k 100k 70k 50k 30k 20k 10k 7.0k 5.0k 3.0k 2.0k t j = 125c t j =25 c v ce = 5.0 v f = 100 mhz t j = 25c i c , collector current (ma) figure 7. high frequency current gain 0.5 1.0 2.0 5.0 10 20 50 100 200 500 4.0 2.0 1.0 0.8 0.6 0.4 0.2 |h fe |, smallC signal current gain 25c C55c v ce = 5.0v 5.0 7.0 10 20 30 50 70 100 200 300 500 h fe , dc current gain 0.1 0.2 0.5 1.0 2.0 5.0 10 2 0 50 100 200 500 1000 3.0 2.5 2.0 1.5 1.0 0.5 v ce , collectorC emitter voltage (volts) i c , collector current (ma) figure 8. dc current gain i b , base current ( a) figure 9. collector saturation region 5.0 7.0 10 20 30 50 70 100 200 300 500 v be(sat) @ i c /i b = 1000 v ce(sat) @ i c /i b = 1000 v be(on) @ v ce = 5.0 v 5.0 7.0 10 20 30 50 70 100 200 300 500 *applies for i c /i b < h fe /3.0 smallCsignal characteristics t j = 25c i c = 10ma 50 ma 250ma 500ma r v , temperature coefficients (mv/c) darlington amplifier transistors mm bta1xlt1 2012-11 willas electronic corp.
t, time (ms) figure 12. thermal response r( t) transient thermal resis t ance(normalized) d = 0.5 0.05 0.1 0.2 single pulse 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k v ce , collec t orCemitter volt age (volts) figure 13.active region safe operating area current limit thermal limit second breakdown limit 0.4 0.6 1.0 2.0 4.0 6.0 10 20 40 t a = 25c t c = 25c 100s 1.0 ms 1.0 s i c , collec t or current (ma) 1.0k 700 500 300 200 100 70 50 30 20 10 single pulse z jc(t) = r(t) ? r jc t j(pk) C t c = p (pk) z jc(t) z ja(t) = r(t) ? r ja t j(pk) C t a = p (pk) z ja(t) figure a design note: use of transient thermal resistance data t p p p p p t 1 1/f duty cycle =t 1 f = t 1 t p peak pulse power = p p darlington amplifier transistors mm bta1xlt1 2012-11 willas electronic corp.
mm inches 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 sot-23 darlington amplifier transistors mm bta1xlt1 2012-11 willas electronic corp. dimensions in inches and (millimeters) .080(2.04) .070(1.78) .110(2.80) .083(2.10) .006(0.15)min. .008(0.20) .003(0.08) .055(1.40) .035(0.89) .020(0.50) .012(0.30) .004(0.10)max. .122(3.10) .106(2.70) .063(1.60) .047(1.20)
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