aug 20 1 1 version 1.0 magnachip semiconductor l td . 1 md p 14 n 25 c n - channel mosfet 250 v absolute maximum ratings (ta = 25 o c) characteristics symbol rating unit drain - source voltage v dss 25 0 v gate - source voltage v gss 30 v continuous drain current t c =25 o c i d 14 a t c = 10 0 o c 8. 8 a pulsed drain current (1) i dm 56 a power dissipation t c =25 o c p d 1 26.3 w derate above 25 o c 1. 01 w/ o c repetitive avalanche energy (1) e ar 1 2.6 mj peak diode recovery dv/dt (3) d v/dt 4 .5 v/ns single pulse avalanche energy (4) e as 550 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 62.5 o c/w thermal resistance, junction - to - case (1) r jc 0.99 md p 1 4 n 25 c n - channel mosfet 25 0 v, 14 a, 0.28 ? general description the mdp14n25c is produced using advanced magna ch ips features ? ds = 25 0 v ? d = 14 a @ v gs = 10v ? ds(on) gs = 10v applic ations ? ? ? d g s
aug 20 1 1 version 1.0 magnachip semiconductor l td . 2 md p 14 n 25 c n - channel mosfet 250 v ordering information p art number temp. range package packing rohs status md p 14 n 25 c th - 55~150 o c to - 220 tube halogen free mdp14n25 c tp - 55~150 o c to - 220 tube pb free electrical characteristics (ta =25 o c) characteristics symbol test condition min typ max unit static characteris tics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 25 0 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250a 2 .0 - 4 .0 drain cut - off current i dss v ds = 25 0 v, v gs = 0v - - 1 a gate leakage current i gss v gs = 30 v, v ds = 0v - - 1 00 n a drain - source on resistance r ds (on) v gs = 10v, i d = 7 a - 0.22 0.28 forward transconductance g fs v ds = 4 0 v, i d = 7 a - 9.2 - s dynamic characteristics total gate charge q g v ds = 200 v, i d = 14 .0 a, v gs = 10v (3) - 20 - nc gate - source charge q gs - 4.5 - gate - drain charge q g d - 8.9 - input capacitance c iss v ds = 25v, v gs = 0v, f = 1.0mhz - 74 1 - pf reverse transfer capacitance c rss - 15 - output capacitance c oss - 142 - turn - on delay time t d(on) v gs = 10v, v ds = 125 v, i d = 14 .0 a, r g = 25 (3) - 13 - ns r ise time t r - 42 - turn - off delay time t d(off) - 44 - fall time t f - 28 - drain - source body diode characteristics maximum continuous drain to source diode forward current i s 14 - - a source - drain diode forward voltage v sd i s = 14 .0 a , v gs = 0v - - 1. 4 v body diode reverse recovery time t rr i f = 14 .0 a , dl/dt = 100a/s (3) - 2 40 - ns body diode reverse recovery charge q rr - 1.96 - c note : 1. p ulse width is based on r j c & r j a and the maximum allowed junction temperature of 150c. 2 . pulse test: pulse width 300us, duty cycle 2%, pulse width lim ited by junction temperature t j(max) =150 c. 3. i sd 6.0 a , di/dt 200a/us, v dd bvdss , r g =25, starting t j =25c 4. l= 4.5 m h, i as = 14 . 0 a , v dd =50v, r g =25, starting t j =25c
aug 20 1 1 version 1.0 magnachip semiconductor l td . 3 md p 14 n 25 c n - channel mosfet 250 v fig. 5 transfer characteristics fig.1 on - region characteristics fig. 2 on - resistance variation with drain current and gate voltage fig. 3 on - resistance variation with temperature fig. 4 breakdown voltage variation vs. temperature fig. 6 body diode forward voltage variation with source current and tem perature 0 5 10 15 0 5 10 15 20 25 30 35 notes 1. 250 ? 2. t c =25 v gs =4.0v =4.5v =5.0v =5.5v =6.0v =6.5v =7.0v =7.5v =8.0v =10.0v =15.0v =20.0v i d ,drain current [a] v ds ,drain-source voltage [v] -5 0 5 10 15 20 25 30 35 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v gs =10.0v v gs =20v r ds(on) [? ] i d ,drain current [a] 3 4 5 6 7 8 9 1 10 -55 25 150 * notes ; 1. vds=30v i d (a) v gs [v] 0.2 0.4 0.6 0.8 1.0 1.2 1 10 25 150 notes : 1. v gs = 0 v 2.250 ? s pulse test i dr reverse drain current [a] v sd , source-drain voltage [v] -50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 7.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -50 0 50 100 150 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 ? bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c]
aug 20 1 1 version 1.0 magnachip semiconductor l td . 4 md p 14 n 25 c n - channel mosfet 250 v fig. 7 gate charge characteristics fig. 8 capacitance characteristics fig. 9 maximum safe operating area fig. 10 maximum drain current v s. case temperature fig. 11 transient thermal response curve fig .1 2 single pulse maximum power dissipation 10 -1 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 10 ? s 100 ? s 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v] 1e-5 1e-4 1e-3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 12000 14000 16000 single pulse r thjc = 0.99 t c = 25 power (w) pulse width (s) 25 50 75 100 125 150 0 2 4 6 8 10 12 14 i d , drain current [a] t c , case temperature [ ] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c r jc =0.99 /w single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , rectangular pulse duration [sec] 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 10 50v 125v 200v note : i d = 14a v gs , gate-source voltage [v] q g , total gate charge [nc] 1 10 0 200 400 600 800 1000 1200 1400 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v]
aug 20 1 1 version 1.0 magnachip semiconductor l td . 5 md p 14 n 25 c n - channel mosfet 250 v physical dimensions 3 leads , to - 220 dimensions are in millimeters unless otherwise specified
aug 20 1 1 version 1.0 magnachip semiconductor l td . 6 md p 14 n 25 c n - channel mosfet 250 v disclaimer: the products are not designed for use in hostile e nvironments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling s ellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er respons ibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registered trademark of magnachip semiconductor ltd.
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