st23 17 s 23 rg p channel enhancement mode mosfet - 5 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st23 17 s 23 rg 2016 rev.1 description st23 17s23 rg is the p - channel logic enhancement mode power field effect transistor is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on - state resistance. these devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high - side switching and low in - line power loss are required in a very small outline surface mount package . pin configuration sot - 23 - 3l 1.gate 2.source 3.drain part marking sot - 23 - 3l y: year code w : week code feature l - 4 0v/ - 5 .0 a, r ds(on) = 37 m (typ.) @vgs = - 10 v l - 4 0v/ - 3 .0 a, r ds(on) = 5 1 m @vgs = - 4.5v l sup e r high density cell design for extremely low r ds(on) l exceptional on - resistance and maximum dc current capability l sot - 23 package design 3 1 2 d g s 3 1 2 1 7 y w
st23 17 s 23 rg p channel enhancement mode mosfet - 5 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st23 17 s 23 rg 2016 rev.1 absoulte maximum ratings (ta = 25 unless otherwise noted ) parameter symbol typical unit drain - source voltage v dss - 4 0 v gate - source voltage v gss 20 v continuous drain currenttj=150 ) t a =25 t a =70 i d - 5.0 - 3 . 8 a pulsed drain current i dm - 2 8 a continuous source current (d iode conduction) i s 3.0 a power dissipation t a =25 t a =70 p d 2.0 0.8 1 w operation junction temperature t j - 55/ 150 storgae temperature range t stg - 55/150 thermal resistance - junction to ambient r ja 10 5 /w
st23 17 s 23 rg p channel enhancement mode mosfet - 5 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st23 17 s 23 rg 2016 rev.1 electrical characteristic s ( ta = 25 unless otherwise noted ) parameter symbol condition min typ max unit static drain - source breakdown voltage v (br)dss v gs =0v,i d = - 10ua - 4 0 v gate threshold voltage v gs(th) v ds =vgs,i d = - 250ua - 1 - 2 . 5 v gate leakage current i gss v ds =0v,v gs = 20v 100 na zero gate voltage drain current i dss v ds = - 4 0 v,v gs =0v - 1 ua v ds = - 3 6 v,v gs =0v t j = 5 5 - 5 drain - source on - resistance r ds(on) v gs = - 10v,i d = - 5 . 0 a v gs = - 4.5v,i d = - 3.8 a 3 7 5 1 45 58 m forward transconductance g fs v ds = - 1 5 v,i d = - 3 . 0a 17 s diode f orward voltage v sd i s = - 1. 0 a,v gs =0v - 1. 0 v dynamic total gate charge q g v ds = - 20 v v gs = - 15 v i d - 5 .0 a 18 2 2 nc gate - source charge q gs 8 .5 gate - drain charge q gd 3.0 input capacitance c iss v ds = - 20 v v gs =0v f=1mh z 95 0 pf output capacitance c os s 95 reverse transfer capacitance c rss 75 turn - on time t d(on) tr v dd = - 20 v r l =3.3 v gen =3 v ds = - 20v 8 20 ns 10 20 turn - off time t d(off) tf 30 35 15 20
st23 17 s 23 rg p channel enhancement mode mosfet - 5 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st23 17 s 23 rg 2016 rev.1 typical characterictics (25 unless noted)
st23 17 s 23 rg p channel enhancement mode mosfet - 5 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st23 17 s 23 rg 2016 rev.1 typical characterictics (25 unless noted)
st23 17 s 23 rg p channel enhancement mode mosfet - 5 .0 a stanson technology 120 bentley square, mountain view, ca 94040 usa www.stansontech.com st23 17 s 23 rg 2016 rev.1 sot - 23 - 3l package outline
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