clx27 semiconductor group 1 of 9 draft d, september 99 hirel x-band gaas power-mesfet ? hirel discrete and microwave semiconductor ? for professional power amplifiers ? for frequencies from 500 mhz to 15 ghz ? hermetically sealed microwave power package ? low thermal resistance for high voltage application ? power added efficiency > 55 % ? space qualification expected 1998 esa/scc detail spec. no.: 5614/007, type variant no.s 04 to 06 esd : e lectro s tatic d ischarge sensitive device, observe handling precautions! type marking ordering code pin configuration package 123 clx27-00 (ql) CLX27-05 (ql) clx27-10 (ql) - see below g s d mwp-25 clx27-nn: specifies output power level (see electrical characteristics) (ql) quality level: p: professional quality, ordering code: q62702l119 h: high rel quality, ordering code: on request s: space quality, ordering code: on request es: esa space quality, ordering code: q62702l118 (see order instructions for ordering example)
clx27 semiconductor group 2 of 9 draft d, september 99 maximum ratings parameter symbol values unit drain-source voltage v ds 11 v drain-gate voltage v dg 13 v gate-source voltage v gs - 6 v drain current i d 420 ma gate forward current i g 5ma compression level operation range 1 1) p c 1.5 at v ds 8 v 2.5 at v ds 7 v 3.5 at v ds 6 v db compression level operation range 2 2) p c 3.5 at v ds 6 v db compression level operation range 3 3) p c tbd. db junction temperature t j 175 c storage temperature range t stg - 65...+ 175 c total power dissipation 4) p tot 3.38 w soldering temperature 5) t sol 230 c thermal resistance junction-soldering point r th js 40 k/w notes.: 1) operation range 1: 80 ma i d 160 ma 2) operation range 2: i d > 160 ma 3) operation range 3: i d < 80 ma 4) at t s = + 40 c. for t s > + 40 c derating is required. 5) during 15 sec. maximum. the same terminal shall not be resoldered until 3 minutes have elapsed.
clx27 semiconductor group 3 of 9 draft d, september 99 electrical characteristics (at t a =25c; unless otherwise specified) parameter symbol values unit min. typ. max. dc characteristics drain-source saturation current v ds = 2 v, v gs = 0 v i dss 180 300 420 ma gate threshold voltage v ds = 3 v, i d = 12 ma -v gth 1.2 2.2 3.2 v drain current at pinch-off, low v ds v ds = 3 v, v gs = -3.5 v i dp3 -- 60a gate current at pinch-off, low v ds v ds = 3 v, v gs = -3.5 v -i gp3 -- 24a drain current at pinch-off, high v ds v ds = 9.5 v, v gs = -3.5 v i dp9.5 - - 600 a gate current at pinch-off, high v ds v ds = 9.5 v, v gs = -3.5 v -i gp9.5 - - 240 a transconductance v ds = 3 v, i d = 120 ma g m 130 160 - ms thermal resistance junction to soldering point v ds = 8 v, i d = 120 ma, t s = +25c r th js -35-k/w
clx27 semiconductor group 4 of 9 draft d, september 99 electrical characteristics (continued) parameter symbol values unit min. typ. max. ac characteristics linear power gain 1) v ds = 8 v, i d = 120 ma, f = 2.3 ghz, p in = 0 dbm g lp db clx27-00 17.5 18.5 - CLX27-05 18.0 19.0 - clx27-10 18.0 19.0 - power output at 1db gain compr. 1) v ds = 8 v, i d(rf off) = 120 ma, f = 2.3 ghz p 1db dbm clx27-00 - 26.5 - CLX27-05 - 27.3 - clx27-10 - 27.8 - output power 1) v ds = 8 v, i d(rf off) = 120 ma, f = 2.3 ghz, p in = 10.5 dbm p out dbm clx27-00 26.0 26.5 - CLX27-05 27.0 27.3 - clx27-10 27.5 27.8 - power added efficiency 1), 2) v ds = 8 v, i d(rf off) = 120 ma, f = 2.3 ghz, p in = 10.5 dbm pae % clx27-00 45 50 - CLX27-05 48 53 - clx27-10 50 55 - notes.: 1) rf power characteristics given for power matching conditions 2) power added efficiency: pae = (p rfout - p rfin ) / p dc
clx27 semiconductor group 5 of 9 draft d, september 99 typical common source s-parameters v ds = 3 v, i d = 120 ma, z o = 50 ? f |s11| clx27 semiconductor group 6 of 9 draft d, september 99 typical common source s-parameters (continued) v ds = 5 v, i d = 120 ma, z o = 50 ? f |s11| clx27 semiconductor group 7 of 9 draft d, september 99 typical common source s-parameters (continued) v ds = 8 v, i d = 120 ma, z o = 50 ? f |s11| clx27 semiconductor group 8 of 9 draft d, september 99 order instructions: full type variant including quality level must be specified by the orderer. for hirel discrete and microwave semiconductors the ordering code specifies device family and quality level only. ordering form: ordering code: q.......... clx27- (nn) (ql) (nn): output power level (ql): quality level ordering example: ordering code: q62702l118 clx27-10 es for clx27; output power level 10 (p out >27.5 dbm) in esa space quality level further informations: see our www-pages: - discrete and rf-semiconductors (small signal semiconductors) www.infi neon.de/semiconductor/products/35/35.htm - hirel discrete and microwave semiconductors www.infi neon.de/semiconductor/products/35/353.htm please contact also our marketing division : tel.: ++89 234 24480 fax.: ++89 234 24838 e-mail: martin.wimmers@infineon.com address: infineon technologies semiconductors, high frequency products marketing, p.o.box 801709, d-81617 munich
clx27 semiconductor group 9 of 9 draft d, september 99 mwp-25 package 1 3 2 published by infineon technologies semiconductors, high frequency products marketing, p.o.box 801709, d-81617 munich. infineon technologies ag 1998. all rights reserved. as far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the offices of semiconductor group in germany or the infineon technologies companies and representatives woldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the type in question please contact your nearest infineon technologies office, semiconductor group. infineon technologies semiconductors is a certified cecc and qs9000 manufacturer (this includes iso 9000).
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