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1 motorola tmos product preview data
? ? mosfet and schottky rectifier the fetky ? product family incorporates low r ds(on) , true logic level mosfets packaged with industry leading, low forward drop, low leakage schottky barrier rectifiers to offer high efficiency components in a space saving configuration. independent pinouts for tmos and schottky die allow the flexibility to use a single component for switching and rectification functions in a wide variety of applications such as buck converter, buckboost, synchronous rectification, low voltage motor control, and load manage- ment in battery packs, chargers, cell phones and other portable products. ? hdtmos power mosfet with low v f , low i r schottky rectifier ? lower component placement and inventory costs along with board space savings ? logic level gate drive e can be driven by logic ics ? mounting information for so8 package provided ? i dss specified at elevated temperature ? applications information provided mosfet maximum ratings (t j = 25 c unless otherwise noted) (1) rating symbol value unit draintosource voltage v dss 20 vdc draintogate voltage (r gs = 1.0 m ) v dgr 20 vdc gatetosource voltage e continuous v gs 20 vdc drain current (3) e continuous @ t a = 25 c e continuous @ t a = 100 c e single pulse (tp 10 s) i d i d i dm 3.3 2.1 20 adc apk total power dissipation @ t a = 25 c (2) p d 2.0 watts single pulse draintosource avalanche energy e starting t j = 25 c v dd = 30 vdc, v gs = 5.0 vdc, v ds = 20 vdc, i l = 9.0 apk, l = 10 mh, r g = 25 e as 324 mj schottky rectifier maximum ratings (t j = 25 c unless otherwise noted) peak repetitive reverse voltage dc blocking voltage v rrm v r 20 volts average forward current (3) (rated v r ) t a = 100 c i o 1.0 amps peak repetitive forward current (3) (rated v r , square wave, 20 khz) t a = 105 c i frm 2.0 amps nonrepetitive peak surge current (surge applied at rated load conditions, halfwave, single phase, 60 hz) i fsm 20 amps device marking ordering information 2p102 device reel size tape width quantity 2p102 MMDFS2P102R2 13 12 mm embossed tape 2500 units (1) negative sign for pchannel device omitted for clarity. (2) pulse test: pulse width 250 m s, duty cycle 2.0%. (3) mounted on 2 square fr4 board (1 sq. 2 oz. cu 0.06 thick single sided), 10 sec. max. designer's data for aworst caseo conditions e the designer's data sheet permits the design of most circuits entirely from the information presented. soa limit curves e representing boundaries on device characteristics e are given to facilitate aworst caseo design. hdtmos and designer's are trademarks of motorola, inc. tmos is a registered trademark of motorola, inc. fetky is a trademark of international rectifier. order this document by mmdfs2p102/d
semiconductor technical data
pchannel power mosfet with schottky rectifier 20 volts r ds(on) = 0.16 v f = 0.39 volts case 75105, style 18 (so 8) 1 2 3 4 8 7 6 5 a a s g c c d d top view ? ? motorola, inc. 1997
2 motorola tmos product preview data thermal characteristics e schottky and mosfet thermal resistance e junctiontoambient (1) e mosfet r ja 167 c/w thermal resistance e junctiontoambient (2) e mosfet r ja 100 thermal resistance e junctiontoambient (3) e mosfet r ja 62.5 thermal resistance e junctiontoambient (1) e schottky r ja 204 thermal resistance e junctiontoambient (2) e schottky r ja 122 thermal resistance e junctiontoambient (3) e schottky r ja 83 operating and storage temperature range t j , t stg 55 to 150 (1) mounted with minimum recommended pad size, pc board fr4. (2) mounted on 2 square fr4 board (1 sq. 2 oz. cu 0.06 thick single sided), steady state. (3) mounted on 2 square fr4 board (1 sq. 2 oz. cu 0.06 thick single sided), 10 sec. max.
3 motorola tmos product preview data mosfet electrical characteristics (t j = 25 c unless otherwise noted) (1) characteristic symbol min typ max unit off characteristics drainsource voltage (v gs = 0 vdc, i d = 0.25 ma) temperature coefficient (positive) v (br)dss 20 e e 25 e e vdc mv/ c zero gate drain current (v ds = 30 vdc, v gs = 0 vdc) (v ds = 20 vdc, v gs = 0 vdc, t j = 125 c) i dss e e e e 1.0 10 m adc gate body leakage current (v gs = 20 vdc, v ds = 0) i gss e e 100 nadc on characteristics (2) gate threshold voltage (v ds = v gs , i d = 0.25 ma) temperature coefficient (negative) v gs(th) 1.0 e 1.5 4.0 2.0 e vdc mv/ c static drainsource resistance (v gs = 10 vdc, i d = 2.0 adc) (v gs = 4.5 vdc, i d = 2.5 adc) r ds(on) e e 0.118 0.152 0.160 0.180 ohms forward transconductance (v ds = 3.0 vdc, i d = 1.0 adc) g fs 2.0 3.0 e mhos dynamic characteristics input capacitance (v 16 vdc v 0 vdc c iss e 420 588 pf output capacitance (v ds = 16 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss e 290 406 reverse transfer capacitance f = 1 . 0 mhz) c rss e 116 232 switching characteristics (3) turnon delay time (v 10 vd i 2 0 ad t d(on) e 19 38 ns rise time (v ds = 10 vdc, i d = 2.0 adc, v gs =45vdc t r e 66 132 turnoff delay time v gs = 4 . 5 vd c, r g = 6.0 w ) t d(off) e 25 50 fall time g ) t f e 37 74 gate charge (v 16 vd i 2 0 ad q t e 15 20 nc (v ds = 16 vdc, i d = 2.0 adc, q 1 e 1.2 e ( ds , d , v gs = 10 vdc) q 2 e 5.0 e q 3 e 4.0 e drain source diode characteristics forward onvoltage (2) (i s = 2.0 adc, v gs = 0 vdc) v sd e 1.5 2.1 v reverse recovery time (i 2 0 ad v 15 v t rr e 38 e ns (i s = 2.0 adc, v dd = 15 v, t a e 17 e ( s , dd , dis/dt = 100 a/ m s) t b e 21 e reverse recovery stored charge q rr e 0.034 e m c schottky rectifier electrical characteristics (t j = 25 c unless otherwise noted) maximum instantaneous forward voltage (2) i10a v f t j = 25 c t j = 125 c volts i f = 1.0 a i f = 2.0 a 0.47 0.58 0.39 0.53 maximum instantaneous reverse current (2) v20v i r t j = 25 c t j = 125 c ma v r = 20 v 0.05 10 maximum voltage rate of change v r = 20 v dv/dt 10,000 v/ s (1) negative sign for pchannel device omitted for clarity. (2) pulse test: pulse width 300 m sec, duty cycle 2.0%. (3) switching characteristics are independent of operating temperature.
4 motorola tmos product preview data typical fet electrical characteristics figure 1. onregion characteristics figure 2. transfer characteristics figure 3. onresistance versus gatetosource voltage figure 4. onresistance versus drain current and gate voltage figure 5. onresistance variation with temperature figure 6. draintosource leakage current versus voltage 1.2 0 v ds , draintosource voltage (volts) 4.0 3.0 2.0 v gs , gatetosource voltage (volts) 3.5 1.0 3.0 2.0 1.0 0 8.0 10 0 v gs , gatetosource voltage (volts) 0.6 0.4 0.3 0.2 0.1 0 i d , drain current (amps) 0.5 0 0.20 0.16 0.12 0.08 0.04 1.0 25 25 50 t j , junction temperature ( c) 1.2 0.8 0.6 v ds , draintosource voltage (volts) 5.0 20 0 100 1.0 15 0 i d , drain current (amps) i r 1.0 0 0.6 0.2 0.4 0.8 1.0 1.4 1.6 1.5 2.0 2.5 3.0 4.0 2.0 4.0 6.0 1.5 2.0 2.5 3.0 3.5 4.0 , draintosource resistance (normalized) r ds(on) 50 100 75 1.0 10 10 i dss , leakage (na) 1.8 , drain current (amps) d , draintosource resistance (ohms) ds(on) 0.5 r , draintosource resistance (ohms) ds(on) 125 150 1.4 1.6 v gs = 10 v i d = 2.0 a v gs = 0 v t j = 125 c 100 c t j = 25 c v gs = 4.5 v 10 v t j = 25 c i d = 1.0 a v ds 10 v t j = 55 c 100 c 25 c t j = 25 c 3.1 v v gs = 2.4 v 10 v 4.5 v 3.8 v
5 motorola tmos product preview data typical fet electrical characteristics mounted on 2 sq. fr4 board (1 sq. 2 oz. cu 0.06 thick single sided) with one die operating, 10 s max. figure 7. capacitance variation figure 8. gatetosource and draintosource voltage versus total charge figure 9. resistive switching time variation versus gate resistance figure 10. diode forward voltage versus current figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy versus starting junction temperature 5.0 20 10 gatetosource or draintosource voltage (volts) 1200 800 1000 600 q g , total gate charge (nc) 16 0 6.0 4.0 2.0 0 100 1.0 r g , gate resistance (ohms) 1000 100 10 v sd , sourcetodrain voltage (volts) 0.5 2.0 1.6 1.2 0.8 0.4 0 0.7 0.1 v ds , draintosource voltage (volts) 0.1 0.01 t j , starting junction temperature ( c) 50 150 25 350 300 50 0 1.0 c, capacitance (pf) v 400 200 0 5.0 0 10 4.0 8.0 12 12 10 0.9 1.1 1.3 1.5 , drain current (amps) i d 10 1.0 75 100 125 100 e as , single pulse draintosource 15 , gatetosource voltage (volts) gs t, time (ns) i , source current (amps) s 100 10 100 10 8.0 150 200 250 avalanche energy (mj) i d = 6.0 a v ds = 0 v gs = 0 t j = 25 c v gs = 0 v t j = 25 c c iss c iss c oss c rss c rss i d = 2.0 a t j = 25 c v ds v gs q t q2 q1 q3 t d(off) t d(on) t r t f r ds(on) limit thermal limit package limit dc 10 ms 1.0 ms 100 s 10 s v gs = 20 v single pulse t c = 25 c v gs v ds 0 18 16 14 12 10 8.0 6.0 4.0 2.0
6 motorola tmos product preview data typical fet electrical characteristics figure 13. fet thermal response figure 14. diode reverse recovery waveform di/dt t rr t a t p i s 0.25 i s time i s t b t, time (s) rthja(t), effective transient thermal response 1.0 0.1 0.001 d = 0.5 single pulse 1.0e05 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 0.2 0.1 0.05 0.02 0.01 1.0e+02 1.0e+03 0.0001 0.01 normalized to r ja at steady state (1 pad) chip junction 0.0175 0.0154 f 0.0710 0.0854 f 0.2706 0.3074 f 0.5776 1.7891 f 0.7086 107.55 f ambient typical schottky electrical characteristics t j = 125 c figure 15. typical forward voltage figure 16. maximum forward voltage 0.7 1.0 0.1 v f , instantaneous forward voltage (volts) 10 1.0 v f , maximum instantaneous forward voltage (volts) 1.4 0 1.0 0.1 i f , instantaneous forward current (amps) 0.1 0.4 0.2 0.3 0.5 0.6 0.8 0.9 0.2 0.4 0.6 0.8 10 i f , instantaneous forward current (amps) 1.0 1.2 85 c 25 c 40 c t j = 125 c 25 c 85 c
7 motorola tmos product preview data typical schottky electrical characteristics figure 17. typical reverse current figure 18. maximum reverse current figure 19. typical capacitance figure 20. current derating figure 21. forward power dissipation 15 20 0 v r , reverse voltage (volts) 1e2 1e4 1e3 1e5 15 20 0 v r , reverse voltage (volts) 1000 100 10 t a , ambient temperature ( c) 20 0 1.6 0.8 0.6 0.4 0.2 0 40 0 i o , average forward current (amps) 0.5 0.4 0.3 0.2 0.1 0 0.5 i r , reverse current (amps) 1e6 1e7 5.0 10 5.0 10 60 80 100 120 140 160 , average power dissipation (watts) p fo 1.0 1.5 c, capacitance (pf) i , average forward current (amps) o 2.0 0.6 0.7 15 20 0 v r , reverse voltage (volts) 1e1 1e3 1e2 1e4 i r , maximum reverse current (amps) 1e5 1e6 5.0 10 1.0 1.2 1.4 square wave dc i pk /i o = 5.0 i pk /i o = i pk /i o = 10 i pk /i o = 20 typical capacitance at 0 v = 170 pf t j = 125 c 25 c t j = 125 c 25 c 85 c freq = 20 khz dc square wave i pk /i o = 5.0 i pk /i o = i pk /i o = 10 i pk /i o = 20
8 motorola tmos product preview data typical schottky electrical characteristics figure 22. schottky thermal response t, time (s) rthja(t), effective transient thermal resistance 1.0 0.1 d = 0.5 single pulse 1.0e05 1.0e04 1.0e03 1.0e02 1.0e01 1.0e+00 1.0e+01 0.2 0.1 0.05 0.02 0.01 1.0e+02 1.0e+03 0.001 0.01 normalized to r ja at steady state (1 pad) chip junction 0.0031 0.0014 f 0.0154 0.0082 f 0.1521 0.1052 f 0.4575 2.7041 f 0.3719 158.64 f ambient
9 motorola tmos product preview data typical applications load v out c o + v in + load v out c o + v in + l o l o step down switching regulators buck regulator synchronous buck regulator load v out c o + v in + load v out c o + v in + step up switching regulators boost regulator buckboost regulator l1 q1
10 motorola tmos product preview data typical applications v in + multiple battery chargers batt #1 batt #2 d2 d3 q2 q3 buck regulator/charger c o l o q1 d1 lilon battery pack applications battery pack discharge charge smart ic liion battery cells pack + pack schottky schottky q1 q2 ? applicable in battery packs which require a high current level. ? during charge cycle q2 is on and q1 is off. schottky can reduce power loss during fast charge. ? during discharge q1 is on and q2 is off. again, schottky can reduce power dissipation. ? under normal operation, both transistors are on.
11 motorola tmos product preview data mm inches 0.060 1.52 0.275 7.0 0.024 0.6 0.050 1.270 0.155 4.0 so8 footprint package dimensions case 75105 so 08 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimensions a and b do not include mold protrusion. 4. maximum mold protrusion 0.15 (0.006) per side. 5. dimension d does not include dambar protrusion. allowable dambar protrusion shall be 0.127 (0.005) total in excess of the d dimension at maximum material condition. seating plane 14 5 8 c k 4x p a 0.25 (0.010) m tb ss 0.25 (0.010) m b m 8x d r m j x 45 f a b t dim min max min max inches millimeters a 4.80 5.00 0.189 0.196 b 3.80 4.00 0.150 0.157 c 1.35 1.75 0.054 0.068 d 0.35 0.49 0.014 0.019 f 0.40 1.25 0.016 0.049 g 1.27 bsc 0.050 bsc j 0.18 0.25 0.007 0.009 k 0.10 0.25 0.004 0.009 m 0 7 0 7 p 5.80 6.20 0.229 0.244 r 0.25 0.50 0.010 0.019 g
12 motorola tmos product preview data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer. mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.; tatsumispdjldc, 6f seibubutsuryucenter, p.o. box 5405, denver, colorado 80217. 3036752140 or 18004412447 3142 tatsumi kotoku, tokyo 135, japan. 81335218315 mfax ? : rmfax0@email.sps.mot.com touchtone 6 022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 internet : http://motorola.com/sps mmdfs2p102/d ?

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