v rrm = 1600 v - 2000 v i f =300 a features ? high surge capability do-9 package ? not esd sensitive note: 1. standard polarity: stud is cathode. 3. stud is base. parameter symbol unit re p etitive p eak reverse volta g e v rrm v ? types from 1600 v to 2000 v v rrm 2000 S300z (r) S300y thru S300zr maximum ratings, at t j = 25 c, unless otherwise specified ("r" devices have leads rev ersed) silicon standard recover y diode conditions S300y (r) 1600 2. reverse polarity (r): stud is anode. pp g rms reverse voltage v rms v dc blocking voltage v dc v continuous forward current i f a operating temperature t j c storage temperature t stg c parameter symbol unit diode forward voltage a ma thermal characteristics thermal resistance, junction - case r thjc c/w 0.16 2000 1414 1.2 S300z (r) -55 to 150 -55 to 150 S300y (r) 1.2 10 12 reverse current v r = 1600 v, t j = 25 c i f = 300 a, t j = 25 c t c 130 c conditions electrical characteristics, at tj = 25 c, unless otherwise spe cified t c = 25 c, t p = 8.3 ms surge non-repetitive forward current, half sine wave i f,sm a -55 to 150 6850 300 1131 1600 300 6850 -55 to 150 v r = 1600 v, t j = 175 c v 0.16 12 10 i r v f feb 2016 latest v ersion of this datasheet at: www. genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 1
S300y thru S300zr feb 2016 latest v ersion of this datasheet at: www. genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 2
package dimensions and terminal configuration product is marked with part number and terminal configuration. S300y thru S300zr do-9 (do--205ab) d h i f b g a e c inches millimeters min max min max a m 20 * p 1.5 b ----- 1.10 ----- 27.94 c 1.24 1.25 31.5 31.90 d 5.31 5.98 135 152 e 0.78 0.828 19.60 21.03 f 0.470 0.530 11.94 13.46 g ----- 1.122 ----- 28.5 h ----- 0.787 ----- 20.0 i 0.330 0.350 8.38 8.89 feb 2016 latest v ersion of this datasheet at: www. genesicsemi.com/silicon-products/standard-recovery-rectifiers/ 3
|
