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| savantic semiconductor product specification silicon pnp power transistors 2SA1451 d escription with to-220fa package low collector saturation voltage high speed switching time complement to type 2sc3709 applications high current switching applications pinning pin description 1 emitter 2 collector 3 base absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -50 v v ebo emitter-base voltage open collector -6 v i c collector current -12 a i b base current -2 a p c collector power dissipation t c =25 30 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon pnp power transistors 2SA1451 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -50 v v cesat collector-emitter saturation voltage i c =-6a ;i b =-0.3a -0.15 -0.4 v v besat base-emitter saturation voltage i c =-6a ;i b =-0.3a -0.9 -1.2 v i cbo collector cut-off current v cb =-60v; i e =0 -10 a i ebo emitter cut-off current v eb =-6v; i c =0 -10 a h fe-1 dc current gain i c =-1a ; v ce =-1v 70 240 h fe-2 dc current gain i c =-6a ; v ce =-1v 40 f t transition frequency i c =-1a ; v ce =-5v 70 mhz c ob collector output capacitance i e =0; v ce =-10v;f=1mhz 320 pf switching times t on turn-on time 0.3 s t s storage time 1.0 s t f fall time i b1 =-i b2 =-0.3a v cc @ -30v;r l =5 a 0.5 s h fe-1 classifications o y 70-140 120-240 downloaded from: http:/// savantic semiconductor product specification 3 silicon pnp power transistors 2SA1451 package outline fig.2 outline dimensions (unindicated tolerance:0.15 mm) downloaded from: http:/// savantic semiconductor product specification 4 silicon pnp power transistors 2SA1451 downloaded from: http:/// |
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