2004. 7. 14 1/2 semiconductor technical data kdv350f revision no : 0 vco for uhf/vhf band. features h high capacitance ratio : c 1v /c 4v =2.8 (min.) h low series resistance. : r s =0.5 ? (max.) h good c-v linearity. maximum rating (ta=25 ? ) tfsc dim millimeters a b c d e 1.00 0.05 0.80+0.10/-0.05 0.60 0.05 0.30 0.05 0.40 max cathode mark c d b 1 2 a e f 0.13 0.05 f + _ + _ + _ + _ 1. anode 2. cathode electrical characteristics (ta=25 ? ) variable capacitance diode silicon epitaxial planar diode type name marking e characteristic symbol rating unit reverse voltage v r 15 v junction temperature t j 150 ? storage temperature range t stg -55 q 150 ? characteristic symbol test condition min. typ. max. unit reverse current i r1 v r =15v --10 na i r2 v r =15v, ta=60 ? - - 100 capacitance c 1v v r =1v, f=1mhz 15.5 - 17.0 pf c 4v v r =4v, f=1mhz 5.0 - 6.0 capacitance ratio c 1v /c 4v - 2.8 - - - series resistance r s v r =1v, f=470mhz - - 0.5 ?
2004. 7. 14 2/2 revision no : 0 kdv350f 10 reverse current i (a) r t 0 reverse voltage v (v) r i - v rr 412 816 total capacitance c (pf) 0 1.0 0.1 reverse voltage v (v) r tr c - v 10 5 10 20 15 25 f=1mhz 30 -1.5 1.0 0.1 reverse voltage v (v) r tr r ? (log c ) / ? (log v ) - v tr ? (log c ) / ? (log v ) 10 -1.0 -0.5 0 s series resistance r ( ? ) 0 1.0 0.1 reverse voltage v (v) r sr r - v 10 0.4 f=470mhz 0.5 0.3 0.1 0.2 -12 10 -13 10 -11
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