www.goodark.com page 1 of 4 rev.1.1 ssf 23 00 b 20v n-channel mosfet package marking and ordering information device marking device device package reel size tape width quantity 2300b SSF2300B sot23-3 ?180mm 8 mm 3000 units absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 10 v i d 4.5 a drain current-continuous@ current-pulsed (note 1) i dm 16 a maximum power dissipation p d 1.2 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal characteristics thermal resistance,junction-to-ambient (note 2) r ja 140 /w general features v ds = 20v,i d = 4.5a r ds(on) < 115m @ v gs =2.5v r ds(on) < 60m @ v gs =4.5v high power and current handing capability lead free product surface mount package description the SSF2300B uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a battery protection or in other switching application. a pplication s battery protection load switch power management schematic d iagram marking and p in assignment sot23 - 3 t op v iew d g s
www.goodark.com page 2 of 4 rev.1.1 ssf 23 00 b 20v n-channel mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250a 20 v zero gate voltage drain current i dss v ds =20v,v gs =0v 1 a gate-body leakage current i gss v gs =10v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250a 0.65 0.95 1.2 v v gs =2.5v, i d =3.1a 70 115 m drain-source on-state resistance r ds(on) v gs =4.5v, i d =3.6a 45 60 m forward transconductance g fs v ds =10v,i d =4.5a 8 s dynamic characteristics (note4) input capacitance c lss 500 pf output capacitance c oss 250 pf reverse transfer capacitance c rss v ds =10v,v gs =0v, f=1.0mhz 90 pf switching characteristics (note 4) turn-on delay time t d(on) 7 ns turn-on rise time t r 55 ns turn-off delay time t d(off) 16 ns turn-off fall time t f v dd =10v, r l = 2.8 ? v gs =4.5v,r gen =6, i d =3.6a, 10 ns total gate charge q g 10 nc gate-source charge q gs 2.3 nc gate-drain charge q gd v ds =10v,i d =4.2a,v gs =4.5v 2.9 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =1.3a 1.2 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
www.goodark.com page 3 of 4 rev.1.1 ssf 23 00 b 20v n-channel mosfet typical electrical and thermal characteristics square wave pluse duration(sec) figure 3: normalized maximum transient thermal impedance vgs rgen vin g vdd rl vout s d figure 1: switching test circuit v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% t r t on 90% 10% t off t d(off) t f 90% v in v out 10% 10% 50% 50% pulse width inverted t d(on) 90% 90% t r t on 90% 10% t off t d(off) t f 90% figure 2: switching waveforms normalized effective transient thermal impedance
www.goodark.com page 4 of 4 rev.1.1 ssf 23 00 b 20v n-channel mosfet sot23-3 package information notes 1. tolerance 0.10mm (4 mil) unless otherwise specified 2. package body sizes exclude mold flash and gate burrs. mold flash at the non-lead sides should be less than 5 mils. 3. dimension l is measured in gauge plane. 4. controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
|
