ssf3036c 30v complementary mosfet www.goodark.com page 1 of 5 rev.1.0 main product characteristics features and benefits description absolute max rating max. symbol parameter n-channel p-channel units i d @ tc = 25c continuous drain current, v gs @ 10v (silicon limited) 4 -3.6 i dm pulsed drain current 16 -14.4 a v gs gate to source voltage 12 12 v p d @tc = 25c power dissipation 2.1 1.3 w t j t stg operating junction and storage temperature range -55 to + 150 -55 to + 150 c thermal resistance max. symbol characteristics typ. n-channel p-channel units r ja junction-to-ambient (t 5s) 60 95 /w nmos pmos v dss 30v -30v r ds (on) 32.4mohm 61.6mohm i d 4a -3.6a schematic diagram it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable devic e for use in power switching application and a wide variety of other applications . dfn 3x2-8l bottom view n-channel mosfet p-channel mosfet ? advanced process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 150 operating temperature ? lead free product
ssf3036c 30v complementary mosfet www.goodark.com page 2 of 5 rev.1.0 electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions n-channel 30 v gs = 0v, i d = 250a v (br)dss drain-to-source breakdown voltage p-channel -30 v v gs = 0v, i d = -250a n-channel 32.4 36 v gs = 4.5v,i d = 4.8a r ds(on) static drain-to-source on-resistance p-channel 61.6 65 m v gs = -4.5v,i d = -2.3a n-channel 0.5 2 v ds = v gs , i d = 250a v gs(th) gate threshold voltage p-channel -0.5 -2 v v ds = v gs , i d = -250a n-channel 1 v ds =30v,v gs = 0v i dss drain-to-source leakage current p-channel -1 a v ds =-30v,v gs = 0v n-channel 100 v gs =12v n-channel -100 v gs = -12v p-channel 100 v gs =12v i gss gate-to-source forward leakage p-channel -100 na v gs =-12v source-drain ratings and characteristics symbol parameter min. typ. max. units conditions n-channel 4 i s continuous source current p-channel -3.6 a n-channel 16 i sm pulsed source current p-channel -14.4 a mosfet symbol showing the integral reverse p-n junction diode. n-channel 0.82 1.2 i s =2.4a, v gs =0v v sd diode forward voltage p-channel -0.85 -1.2 v i s =-1.5a, v gs =0v
ssf3036c 30v complementary mosfet www.goodark.com page 3 of 5 rev.1.0 test circuits and waveforms notes : the maximum current rating is limited by bond-wires. repetitive rating; pulse width limited by max. junction temperature. the power diss ipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of rja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c thermal characteristics switching time waveform: figure1. normalized thermal transient impedance, junction-to-ambient
ssf3036c 30v complementary mosfet www.goodark.com page 4 of 5 rev.1.0 mechanical data min nom max min nom max a 0.700 0.750 0.800 0.028 0.030 0.031 a1 0.000 - 0.050 0.000 - 0.002 a3 d 2.950 3.000 3.050 0.116 0.118 0.120 e 1.950 2.000 2.050 0.077 0.079 0.081 b 0.250 0.300 0.350 0.010 0.012 0.014 l 0.280 0.350 0.420 0.016 0.014 0.017 e symbol dimension in millimeters dimension in inches 0.650bsc 0.026bsc 0.200ref 0.008ref dfn 3x2_8l package outline dimension
ssf3036c 30v complementary mosfet www.goodark.com page 5 of 5 rev.1.0 ordering and marking information device marking: 3036c package (available) dfn 3x2-8l operating temperature range c : -55 to 150 oc devices per unit package type units/t ube tubes/inner box units/inner box inner boxes/carton box units/carton box dfn 3x2-8l 3000pcs 10pcs 30000pcs 4pcs 120000pcs reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 150 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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