p p j q2888 november 16,2015 - rev.03 page 1 2 0 v p - c hannel enhancement mode mosfet with tvs diode voltage - 2 0 v current - 1 .5 a dfn2020 - 8l f eatures ? rds(on) , vgs@ - 4.5 v , id @ - 1.5 a< 325 m ? ? r ds(on) , vgs@ - 2 .5 v , i d @ - 1.2 a< 420 m ? ? rds(on) , vgs @ - 2 .5 v, id @ - 0. 5 a< 6 0 0 m ? ? advanced trench process technology ? specially designed for switch load, pwm application, etc. ? esd protected 2kv hbm ? lead free in compliance with eu rohs 2011/65/eu directive . ? green molding compound as per iec61249 std. (halogen free) mechanical data ? case : dfn2020 - 8l package ? terminals : solderable per mil - std - 750, method 2026 ? approx. weight : 0.00032 ounces, 0.0093 grams ? marking : 888 parameter symbol limit units drain - source voltage v ds - 2 0 v gate - source voltage v gs + 8 v continuous d rain current i d - 1 . 5 a pulsed drain current (note 4 ) i dm - 6.0 a power dissipation t a =25 o c p d 1.25 w derate above 25 o c 10 m w/ o c operatin g junction an d storage temperature range t j ,t stg - 55~150 o c typical thermal resistance - j unction to ambient (no te 3 ) r ja 10 0 o c /w maximum ratings and thermal characteristics (t a =25 o c unless otherwise noted)
p p j q2888 november 16,2015 - rev.03 page 2 e lectrical c haracteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units static drain - source break down voltage bv dss v gs = 0 v, i d = - 25 0ua - 2 0 - - v gate threshold voltage v gs(th) v ds = v gs , i d = - 250 ua - 0. 4 - 0.64 - 1. 0 v drain - source on - state resistance r ds(on) v gs = - 4.5 v, i d = - 1 .5 a - 24 0 325 m v gs = - 2 .5 v, i d = - 1.2 a - 29 5 420 v gs = - 1.8 v, i d = - 0.5 a - 405 6 0 0 zero gate voltage drain current i dss v ds = - 2 0 v, v gs =0v - - 0.0 2 - 1 u a gate - source leakage current i gss v gs = + 8 v, v ds =0v - + 3. 5 + 10 u a dynamic total gate charge q g v ds = - 10 v, i d = - 1 .5 a, v gs = - 4.5v (note 1 , 2 ) - 2.2 - nc gate - source charge q gs - 0. 4 - ga te - drain charge q gd - 0. 5 - input capacitance ciss v ds = - 10 v, v gs = 0 v, f=1.0mhz - 1 5 0 - pf output capacitance coss - 2 7 - reverse transfer capacitance crss - 9 - switching turn - on delay time t d (on) v dd = - 10 v, i d = - 1 .5 a, v g s = - 4.5v, r g = 6 (note 1 , 2 ) - 1 1 - ns turn - on rise time tr - 3 8 - turn - o ff delay time t d (off) - 130 - turn - o ff fall time tf - 75 - drain - source diode maximum continuous drain - source diode forward current i s --- - - - 1. 0 a diode forward voltage v sd i s = - 1 a, v g s = 0 v - - 0.9 3 - 1.2 v notes : 1. pulse width < 300us, duty cycle < 2% 2. essentially independent of operating temperature typical characteristics . 3. r ? ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defi ned as the solder mounting surface of the drain pins m ounted on a 1 inch fr - 4 with 2oz . square pad of copper . 4. the maximum current rating is package limited.
p p j q2888 november 16,2015 - rev.03 page 3 electrical characteristics (t a =25 o c unless otherwise noted) parameter symbol test condition min. typ. max. units tvs diode working peak reverse voltage v rwm --- - - 15 v maximum reverse leakage current i r v rwm = 15v - - 1 ua breakdown voltage v br i t = 1ma 17 - - v max. capacitance c j f=1mhz, v r = 0v - - 15 pf clamping voltage v c max per 8x20us - - 30 v maximum reverse peak pulse current i pp --- - - 2 a test current i t --- - - 1.0 ma
p p j q2888 november 16,2015 - rev.03 page 4 t ypical characteristic curves fig.1 on - region characteristics fig. 2 transfer characteristics fig. 3 on - resistance vs. drain current fig. 4 on - resistance vs. junction temperature fig. 5 on - resistance variation with vgs. fig. 6 body d i ode characteristics
p p j q2888 november 16,2015 - rev.03 page 5 t ypical characteristic curves fig. 7 gate - charge characteristics fig. 8 threshold voltage v ariation with temperature . fig. 9 capacitance vs. drain - source voltage. fig. 10 tvs diode surge pulse waveform definition . fig. 11 tvs diode peak pulse power vs. pulse time non - repetitive
p p j q2888 november 16,2015 - rev.03 page 6 part no packing code version mounting pad layout dfn2020 - 8l dimension u nit: mm dfn2020 - 8l pad layout u nit: mm p art n o packing code packa ge type packing type marking ver sion pj q2888_ r 1_ 00001 dfn2020 - 8l 3k pcs / 7
p p j q2888 november 16,2015 - rev.03 page 7 disclaimer
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