dm c 2 1d1uda document number: d s 39203 rev. 1 - 2 1 of 10 www.diodes.com may 2017 ? diodes incorporated dm c 2 1d1uda complementary pair enhancement mode mosfet product summary device b v dss r ds(on) max i d max t a = + 25 c q1 20v 0. 99 ? @ v gs = 4.5v 455m a 1.2 ? @ v gs = 2 .5v 414m a 1.8 ? @ v gs = 1.8 v 338m a 2.4 ? @ v gs = 1 .5v 292m a q2 - 20v 1.9 ? @ v gs = - 4.5v - 328m a 2.4 ? @ v gs = - 2 .5v - 292m a 3.4 ? @ v gs = - 1.8 v - 245m a 5 ? @ v gs = - 1 .5v - 202m a description and applications this mosfet has been designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? general purpose interfacing switch ? power m anagement f unctions ? analog switch features and benefits ? low on - resistance ? very l ow gate threshold voltage , 1.0v max ? low input capacitance ? fast switching speed ? ultra - small surface mount package 0.8 mm x 0.6 mm ? totally lead - free & fully rohs compliant (note 1 & 2 ) ? halogen and antimony free. green device (note 3 ) mechanical data ? case: x2 - dfn0806 - 6 ? case material: molded plastic, Dgreen molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish C matte tin a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.027 grams ( a pproximate) ordering information (note 4 ) part number case packaging dmc21d1uda - 7 b x2 - dfn0806 - 6 10, 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green " products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging det ails, go to our website at https://www.diodes.com/design/support/packaging/diodes - packaging/ . marking information b 3 = product type marking code top view b 3 bottom view device s ymbol pin configuratio n top view top view pin 1 esd protected d 1 g 2 s 2 s 1 g 1 d 2 d2 s2 g2 g ate protection diode d1 s1 g1 g ate protection diode
dm c 2 1d1uda document number: d s 39203 rev. 1 - 2 2 of 10 www.diodes.com may 2017 ? diodes incorporated dm c 2 1d1uda maximum ratings q1 n - channel ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 20 v gate - source voltage v gss 8 v continuous drain current (note 5 ) steady state t a = + 25 c t a = + 70 ? d 455 365 m a pulsed drain current (note 6 ) i dm 15 00 m a maximum ratings q2 p - channel ( @t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 20 v gate - source voltage v gss 8 v continuous drain current (note 5 ) v gs = - 4.5v steady state t a = + 25 ? a = + 70 ? d - 328 - 262 m a pulsed drain current (note 6 ) i dm - 10 00 m a thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5 ) p d 300 mw thermal resistance, junction to ambient (note 5 ) s teady state r ja 419 c/w operating and storage temperature range t j, t stg - 55 to +150 c notes: 5 . device mounted on fr - 4 pcb, with minimum recommended pad layout. 6 . device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. electrical characteristics q1 n - channel ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss 20 gs = 0v, i d = 250a c = + 25c i dss a ds = 16 v, v gs = 0v gate - source leakage i gss a gs = 5 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) 0. 4 0.75 1.0 v v ds = v gs , i d = 250 a ds(on) gs = 4.5v, i d = 1 00ma gs = 2.5v, i d = 5 0ma gs = 1 . 8 v, i d = 2 0ma gs = 1 . 5 v, i d = 1 0ma diode forward voltage v sd gs = 0v, i s = 10ma dynamic characteristics (note 8 ) input capacitance c iss ds = 1 5 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge q g gs = 4.5 v, v ds = 10 v, i d = 250m a gate - source charge q gs gd d( on ) dd = 1 5 v, v gs = 4.5 v, r g = 2 d = 200ma turn - on rise time t r d( off ) f
dm c 2 1d1uda document number: d s 39203 rev. 1 - 2 3 of 10 www.diodes.com may 2017 ? diodes incorporated dm c 2 1d1uda electrical characteristics q2 p - channel ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 ) drain - source breakdown voltage bv dss - 20 gs = 0v, i d = - 250a c = + 25 c i dss a ds = - 16 v, v gs = 0v gate - source leakage i gss a gs = 5 v, v ds = 0v on characteristics (note 7 ) gate threshold voltage v gs( th ) - 0. 4 - 0.7 - 1.0 v v ds = v gs , i d = - 250 a ds(on) gs = - 4.5v, i d = - 1 00ma gs = - 2.5v, i d = - 50 ma gs = - 1 . 8 v, i d = - 20 ma gs = - 1 . 5 v, i d = - 1 0ma diode forward voltage v sd gs = 0v, i s = - 1 0 ma dynamic characteristics (note 8 ) input capacitance c iss ds = - 1 5 v, v gs = 0v , f = 1.0mhz output capacitance c oss rss g ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge q g gs = - 4.5 v, v ds = - 10 v, i d = - 250m a gate - source charge q gs gd d( on ) dd = - 1 5 v, v gs = - 4.5 v, r g = 2 d = - 200ma turn - on rise time t r d( off ) f notes: 7 . short duration pulse test used to minimize self - heating effect . 8 . guaranteed by design. not subject to product testing .
dm c 2 1d1uda document number: d s 39203 rev. 1 - 2 4 of 10 www.diodes.com may 2017 ? diodes incorporated dm c 2 1d1uda typical characteristics - n - channel 0.0 0.2 0.4 0.6 0.8 1.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) fi gure 1. typical output characteristic v gs = 0.9v v gs = 1.0v v gs = 1.2v v gs = 4.0v v gs = 2.5v v gs = 3.0v v gs = 1.5v v gs = 2.0v v gs = 4.5v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 3. typical on - resistance vs. drain current and gate voltage v gs = 4.5v v gs = 2.5v v gs = 1.8v v gs = 1.5v v gs = 1.2v 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 4. typical transfer characteristic i d = 100ma 0.00 0.20 0.40 0.60 0.80 1.00 1.20 0 0.2 0.4 0.6 0.8 1 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 5. typical on - resistance vs. drain current and temperature t j = - 55 t j = 25 t j = 85 t j = 150 t j = 125 v gs = 4.5v 0 0.5 1 1.5 2 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized ) t j , junction temperature ( gs = 1.2v, i d = 1ma v gs = 2.5v, i d = 50ma v gs = 1.8v, i d = 20ma v gs = 1.5v, i d = 10ma v gs = 4.5v, i d = 100ma 0 0.2 0.4 0.6 0.8 1 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v gs , gate - source voltage (v) figure 2. typical transfer characteristic v ds = 2.0v t j = - 55 t j = 25 t j = 85 t j = 125 t j = 150
dm c 2 1d1uda document number: d s 39203 rev. 1 - 2 5 of 10 www.diodes.com may 2017 ? diodes incorporated dm c 2 1d1uda typical characteristics - n - channel (cont.) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - r esistance ( ? j , junction temperature ( gs = 4.5v, i d = 100ma v gs = 1.2v, i d = 1ma v gs = 1.5v, i d = 10ma v gs = 1.8v, i d = 20ma v gs = 2.5v, i d = 50ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 9. diode forward voltage vs. current t a = 125 o c t a = 85 o c t a = 25 o c t a = - 55 o c v gs = 0v t a = 150 o c 1 10 100 0 2 4 6 8 10 12 14 16 18 20 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 10. typical junction capacitance f = 1mhz c rss c oss c iss 0 1 2 3 4 5 6 7 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v gs (v) q g (nc) figure 11. gate charge v ds = 10v, i d = 250ma 0.001 0.01 0.1 1 10 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) fiugre 12. soa, safe operation area p w = 100ms p w = 100s p w = 1s r ds(on) limited p w = 1ms t j(max) = 150 t c = 25 single pulse dut on 1*mrp board v gs = 4.5v p w = 10ms p w = 10s dc 0.2 0.4 0.6 0.8 1 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = 250 a i d = 1ma
dm c 2 1d1uda document number: d s 39203 rev. 1 - 2 6 of 10 www.diodes.com may 2017 ? diodes incorporated dm c 2 1d1uda typical characteristics - p - channel 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0 0.1 0.2 0.3 0.4 0.5 r ds(on) , drain - source on - resistance ( ? d , drain - source current (a) figure 15. typical on - resistance vs. drain current and gate voltage v gs = - 1.8v v gs = - 4.5v v gs = - 2.5v v gs = - 1.5v v gs = - 1.2v 0 1 2 3 4 5 0 1 2 3 4 5 6 7 8 r ds(on) , drain - source on - resistance ( ? gs , gate - source voltage (v) figure 16. typical transfer characteristic i d = - 100ma 0.00 0.50 1.00 1.50 2.00 2.50 0 0.2 0.4 0.6 0.8 r ds(on) , drain - source on - resistance ( ? d , drain current (a) figure 17. typical on - resistance vs. drain current and temperature - 55 25 85 150 125 v gs = - 4.5v 0 0.5 1 1.5 2 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance (normalized) t j , junction temperature ( gs = - 1.2v, i d = - 1ma v gs = - 4.5v, i d = - 100ma v gs = - 2.5v, i d = - 50ma v gs = - 1.8v, i d = - 20ma v gs = - 1.5v, i d = - 10ma 0.0 0.2 0.4 0.6 0.8 1.0 0 0.5 1 1.5 2 2.5 3 i d , drain current (a) v ds , drain - source voltage (v) fig ure 13. typical output characteristic v gs = - 1.2v v gs = - 0.9v v gs = - 1.5v v gs = - 4.5v v gs = - 4.0v v gs = - 2.0v v gs = - 3.0v v gs = - 1.0v v gs = - 2.5v 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v gs , gate - source voltage (v) figure 14. typical transfer characteristic v ds = - 2.0v - 55 25 85 125 150
dm c 2 1d1uda document number: d s 39203 rev. 1 - 2 7 of 10 www.diodes.com may 2017 ? diodes incorporated dm c 2 1d1uda typical characteristics - p - channel (cont.) 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 - 50 - 25 0 25 50 75 100 125 150 r ds(on) , drain - source on - resistance ( ? j , junction temperature ( gs = - 2.5v, i d = - 50ma v gs = - 4.5v, i d = - 100ma v gs = - 1.2v, i d = - 1ma v gs = - 1.5v, i d = - 10ma v gs = - 1.8v, i d = - 20ma 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source - drain voltage (v) figure 21. diode forward voltage vs. current t a = 125 o c t a = 85 o c t a = 25 o c t a = - 55 o c v gs = 0v t a = 150 o c 1 10 100 0 2 4 6 8 10 12 14 16 18 20 c t , junction capacitance (pf) v ds , drain - source voltage (v) figure 22. typical junction capacitance c rss c oss c iss f = 1mhz 0 1 2 3 4 5 6 7 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 v gs (v) q g (nc) figure 23. gate charge v ds = - 10v, i d = - 250ma 0.001 0.01 0.1 1 10 0.1 1 10 100 i d , drain current (a) v ds , drain - source voltage (v) figure 24. soa, safe operation area p w = 100ms p w = 100 s p w = 1s r ds(on) limited p w = 1ms t j(max) = 150 t c = 25 single pulse dut on 1*mrp board v gs = - 4.5v p w = 10ms p w = 10s dc 0.2 0.4 0.6 0.8 1 - 50 - 25 0 25 50 75 100 125 150 v gs(th) , gate threshold voltage (v) t j , junction temperature ( d = - 250 a i d = - 1ma
dm c 2 1d1uda document number: d s 39203 rev. 1 - 2 8 of 10 www.diodes.com may 2017 ? diodes incorporated dm c 2 1d1uda 0.001 0.01 0.1 1 1e - 05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), t ransient thermal resistance t1, pulse duration time (sec) figure 25. transient thermal resistance d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.9 d=0.7 r ja (t) = r(t) * r ja r ja = 409
dm c 2 1d1uda document number: d s 39203 rev. 1 - 2 9 of 10 www.diodes.com may 2017 ? diodes incorporated dm c 2 1d1uda package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. x2 - dfn0806 - 6 suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. x2 - dfn0806 - 6 x2 - dfn0806 - 6 dim min max typ a -- ? ? a1 0.00 0.03 0.02 a3 -- -- 0.10 b 0.07 0.15 0.10 b2 0.10 0.20 0.15 d 0.75 0.85 0.80 e 0.55 0.65 0.60 e -- -- 0.30 k -- -- 0.19 l 0.10 0.18 0.13 la 0.17 0.25 0.20 z -- -- 0.05 z1 -- -- 0.04 all dimensions in mm dimensions value (in mm) g 0.150 g1 0.140 x 0.150 x1 0.200 x2 0.800 y 0.275 y1 0.345 y2 0.760 d e a a3 seating plane e a1 b(4x) r0.050 la(2x) z1 z k b2(2x) l(4x) y2 x2 x x1 y1 y g g1
dm c 2 1d1uda document number: d s 39203 rev. 1 - 2 10 of 10 www.diodes.com may 2017 ? diodes incorporated dm c 2 1d1uda important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other c hanges without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated do es not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemni fy and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized applicat ion. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this doc ument is written in english but may be translated into multiple languages for reference. only the english version of this do cument is the final and determinative format released by diodes incorporated. life support diodes incorporated products are speci fically not authorized for use as critical components in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or system s which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. custom ers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements c oncerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, cus tomers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 7 , diodes incorporated www.diodes. com
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