bt137 series general description glass passivated triacs in a plastic symbol parameter max. max. max. unit envelope, intended for use in applications requiring high bt137- 500 600 800 bidirectional transient and blocking bt137- 500f 600f 800f voltage capability and high thermal bt137- 500g 600g 800g cycling performance. typical drm repetitive peak off-state 500 600 800 v applications include motor control, industrial and domestic lighting, t(rms) rms on-state current 8 8 8 a heating and static switching. tsm non-repetitive peak on-state 65 65 65 a current to220ab limiting values limiting values in accordance with the absolute maximum system (iec 134). symbol parameter conditions min. max. unit -500 -600 -800 v drm repetitive peak off-state - 500 1 600 1 800 v voltages i t(rms) rms on-state current full sine wave; t mb 102 ?c - 8 a i tsm non-repetitive peak full sine wave; t j = 25 ?c prior to on-state current surge t = 20 ms - 65 a t = 16.7 ms - 71 a i 2 ti 2 t for fusing t = 10 ms - 21 a 2 s di t /dt repetitive rate of rise of i tm = 12 a; i g = 0.2 a; on-state current after di g /dt = 0.2 a/ m s triggering t2+ g+ - 50 a/ m s t2+ g- - 50 a/ m s t2- g- - 50 a/ m s t2- g+ - 10 a/ m s i gm peak gate current - 2 a v gm peak gate voltage - 5 v p gm peak gate power - 5 w p g(av) average gate power over any 20 ms period - 0.5 w t stg storage temperature -40 150 ?c t j operating junction - 125 ?c temperature t1 t2 g 1 although not recommended, off-state voltages up to 800v may be applied without damage, but the triac may switch to the on-state. the rate of rise of current should not exceed 6 a/ m s. symbol quick reference data v i voltages i 2014-6-10 1 www.kersemi.com
thermal resistances symbol parameter conditions min. typ. max. unit r th j-mb thermal resistance full cycle - - 2.0 k/w junction to mounting base half cycle - - 2.4 k/w r th j-a thermal resistance in free air - 60 - k/w junction to ambient static characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bt137- ... ...f ...g i gt gate trigger current v d = 12 v; i t = 0.1 a t2+ g+ - 5 35 25 50 ma t2+ g- - 8 35 25 50 ma t2- g- - 11 35 25 50 ma t2- g+ - 30 70 70 100 ma i l latching current v d = 12 v; i gt = 0.1 a t2+ g+ - 7 30 30 45 ma t2+ g- - 16 45 45 60 ma t2- g- - 5 30 30 45 ma t2- g+ - 7 45 45 60 ma i h holding current v d = 12 v; i gt = 0.1 a - 5 20 20 40 ma v t on-state voltage i t = 10 a - 1.3 1.65 v v gt gate trigger voltage v d = 12 v; i t = 0.1 a - 0.7 1.5 v v d = 400 v; i t = 0.1 a; 0.25 0.4 - v t j = 125 ?c i d off-state leakage current v d = v drm(max) ; - 0.1 0.5 ma t j = 125 ?c dynamic characteristics t j = 25 ?c unless otherwise stated symbol parameter conditions min. typ. max. unit bt137- ... ...f ...g dv d /dt critical rate of rise of v dm = 67% v drm(max) ; 100 50 200 250 - v/ m s off-state voltage t j = 125 ?c; exponential waveform; gate open circuit dv com /dt critical rate of change of v dm = 400 v; t j = 95 ?c; - - 10 20 - v/ m s commutating voltage i t(rms) = 8 a; di com /dt = 3.6 a/ms; gate open circuit t gt gate controlled turn-on i tm = 12 a; v d = v drm(max) ;- - - 2 - m s time i g = 0.1 a; di g /dt = 5 a/ m s bt137 series 2014-6-10 2 www.kersemi.com
fig.1. maximum on-state dissipation, p tot , versus rms on-state current, i t(rms) , where a = conduction angle. fig.2. maximum permissible non-repetitive peak on-state current i tsm , versus pulse width t p , for sinusoidal currents, t p 20ms. fig.3. maximum permissible non-repetitive peak on-state current i tsm , versus number of cycles, for sinusoidal currents, f = 50 hz. fig.4. maximum permissible rms current i t(rms) , versus mounting base temperature t mb . fig.5. maximum permissible repetitive rms on-state current i t(rms) , versus surge duration, for sinusoidal currents, f = 50 hz; t mb 102?c. fig.6. normalised gate trigger voltage v gt (t j )/ v gt (25?c), versus junction temperature t j . 0246810 0 2 4 6 8 10 12 = 180 120 90 60 30 bt137 it(rms) / a ptot / w tmb(max) / c 125 121 117 113 109 105 101 1 -50 0 50 100 150 0 2 4 6 8 10 bt137 102 c tmb / c it(rms) / a bt137 10us 100us 1ms 10ms 100ms 10 100 1000 bt137 t / s itsm / a t i tsm time i tj initial = 25 c max t2- g+ quadrant di /dt limit t 0.01 0.1 1 10 0 5 10 15 20 25 bt137 surge duration / s it(rms) / a 1 10 100 1000 0 bt137 number of cycles at 50hz itsm / a 1 10 20 30 40 50 60 70 80 t i tsm time i tj initial = 25 c max t -50 0 50 100 150 0.4 0.6 0.8 1 1.2 1.4 1.6 bt136 tj / c vgt(tj) vgt(25 c) bt137 series 2014-6-10 3 www.kersemi.com
fig.7. normalised gate trigger current i gt (t j )/ i gt (25?c), versus junction temperature t j . fig.8. normalised latching current i l (t j )/ i l (25?c), versus junction temperature t j . fig.9. normalised holding current i h (t j )/ i h (25?c), versus junction temperature t j . fig.10. typical and maximum on-state characteristic. fig.11. transient thermal impedance z th j-mb , versus pulse width t p . fig.12. typical commutation dv/dt versus junction temperature, parameter commutation di t /dt. the triac should commutate when the dv/dt is below the value on the appropriate curve for pre-commutation di t /dt. -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 bt137 tj / c igt(tj) igt(25 c) t2+ g+ t2+ g- t2- g- t2- g+ 0 0.5 1 1.5 2 2.5 3 0 5 10 15 20 25 bt137 vt / v it / a tj = 125 c tj = 25 c typ max vo = 1.264 v rs = 0.0378 ohms -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c il(tj) il(25 c) 10us 0.1ms 1ms 10ms 0.1s 1s 10s 0.01 0.1 1 10 bt137 tp / s zth j-mb (k/w) t p p t d bidirectional unidirectional -50 0 50 100 150 0 0.5 1 1.5 2 2.5 3 triac tj / c ih(tj) ih(25c) 0 50 100 150 1 10 100 1000 tj / c 7.9 4.7 dv/dt (v/us) 2.8 dicom/dt = 10 a/ms 6.1 3.6 off-state dv/dt limit bt137...g series bt137 series bt137...f series bt137 series 2014-6-10 4 www.kersemi.com
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