2011-07-28 1 bcr48pn npn/pnp silicon digital transistor array ? switching circuit, inverter, interface circuit, driver circuit ? two (galvanic) internal isolated npn/pnp transistors in one package ? built in bias resistor npn: r 1 = 47k ? , r 2 = 47k ? pnp: r 1 = 2.2k ? , r 2 = 47k ? ? pb-free (rohs compliant) package ? qualified according aec q101 1 6 2 3 5 4 eha07176 6 54 3 2 1 c1 b2 e2 c2 b1 e1 1 r r 2 r 1 r 2 tr1 tr2 eha07193 123 4 5 6 w1s direction of unreeling top view marking on sot-363 package (for example w1s) corresponds to pin 1 of device position in tape: pin 1 opposite of feed hole side type marking pin configuration package bcr48pn wts 1=e1 2=b1 3=c2 4=e2 5=b2 6=c1 sot363 maximum ratings parameter symbol value unit collector-emitter voltage v ceo 50 v collector-base voltage v cbo 50 input forward voltage npn v i(fwd) 80 input forward voltage pnp v i(fwd) 20 input reverse voltage npn v i(rev) 10 input reverse voltage pnp v i(rev) 5 dc collector current npn i c 70 ma dc collector current pnp i c 100 total power dissipation, t s = 115 c p tot 250 mw junction temperature t j 150 c storage temperature t st g -65...+150
2011-07-28 2 bcr48pn thermal resistance junction - soldering point 1) r thjs 140 k/w electrical characteristics at t a =25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics for npn type collector-emitter breakdown voltage i c = 100 a, i b = 0 v (br)ceo 50 - - v collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 50 - - collector cutoff current v cb = 40 v, i e = 0 i cbo - - 100 na emitter cutoff current v eb = 10 v, i c = 0 i ebo - - 164 a dc current gain 2) i c = 5 ma, v ce = 5 v h fe 70 - - - collector-emitter saturation voltage2) i c = 10 ma, i b = 0.5 ma v cesat - - 0.3 v input off voltage i c = 100 a, v ce = 5 v v i(off) 0.8 - 1.5 input on voltage i c = 2 ma, v ce = 0.3 v v i(on) 1 - 3 input resistor r 1 32 47 62 k ? resistor ratio r 1 / r 2 0.9 1 1.1 - ac characteristics for npn type transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz f t - 100 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf 1 for calculation of r thja please refer to application note an077 (thermal resistance calculation) 2) pulse test: t < 300 s; d < 2%
2011-07-28 3 bcr48pn electrical characteristics at t a =25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics for pnp type collector-emitter breakdown voltage i c = 100 a, i b = 0 v (br)ceo 50 - - v collector-base breakdown voltage i c = 10 a, i e = 0 v (br)cbo 50 - - collector cutoff current v cb = 40 v, i e = 0 i cbo - - 100 na emitter cutoff current v eb = 5 v, i c = 0 i ebo - - 164 a dc current gain 1) i c = 5 ma, v ce = 5 v h fe 70 - - - collector-emitter saturation voltage 1) i c = 10 ma, i b = 0.5 ma v cesat - - 0.3 v input off voltage i c = 100 a, v ce = 5 v v i(off) 0.4 - 0.8 input on voltage i c = 2 ma, v ce = 0.3 v v i(on) 0.5 - 1.1 input resistor r 1 1.5 2.2 2.9 k ? resistor ratio r 1 / r 2 0.042 0.047 0.052 - ac characteristics for pnp type transition frequency i c = 10 ma, v ce = 5 v, f = 100 mhz f t - 200 - mhz collector-base capacitance v cb = 10 v, f = 1 mhz c cb - 3 - pf 1) pulse test: t < 300 s; d < 2%
2011-07-28 4 bcr48pn npn type collector-emitter saturation voltage v cesat = f ( i c ), h fe = 20 10 -3 10 -2 10 -1 a i c 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 v 0.5 v cesat -40 c -25 c 25 c 85 c 125 c dc current gain h fe = f (i c ) v ce = 5v (common emitter configuration) 10 -4 10 -3 10 -2 10 -1 a i c 0 10 1 10 2 10 3 10 h fe -40 c -25 c 25 c 85 c 125 c input on voltage v i(on) = f ( i c ) v ce = 0.3v (common emitter configuration) 10 -5 10 -4 10 -3 10 -2 10 -1 a i c -1 10 0 10 1 10 2 10 v v i(on) -40 c -25 c 25 c 85 c 125 c input off voltage v i(off) = f ( i c ) v ce = 5v (common emitter configuration) 10 -5 10 -4 10 -3 10 -2 10 -1 a i c -1 10 0 10 1 10 v v i(off) -40 c -25 c 25 c 85 c 125 c
2011-07-28 5 bcr48pn pnp type collector-emitter saturation voltage v cesat = f ( i c ), h fe = 20 10 -3 10 -2 10 -1 a i c 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 v 0.5 v cesat -40 c -25 c 25 c 85 c 125 c dc current gain h fe = f (i c ) v ce = 5v (common emitter configuration) 10 -4 10 -3 10 -2 10 -1 a i c 0 10 1 10 2 10 3 10 h fe -40 c -25 c 25 c 85 c 125 c input off voltage v i(off) = f ( i c ) v ce = 5v (common emitter configuration) 10 -5 10 -4 10 -3 10 -2 10 -1 a i c -1 10 0 10 1 10 v v i(off) -40 c -25 c 25 c 85 c 125 c input on voltage v i(on) = f ( i c ) v ce = 0.3v (common emitter configuration) 10 -5 10 -4 10 -3 10 -2 10 -1 a i c -1 10 0 10 1 10 v v i(on) -40 c -25 c 25 c 85 c 125 c
2011-07-28 6 bcr48pn total power dissipation p tot = f ( t s ) 0 15 30 45 60 75 90 105 120 c 150 t s 0 25 50 75 100 125 150 175 200 225 250 mw 300 p tot permissible pulse load p totmax / p totdc = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 - p totmax / p totdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 permissible pulse load r thjs = f ( t p ) 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -1 10 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0
2011-07-28 7 bcr48pn package sot363 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel for symmetric types no defined pin 1 orientation in reel. small variations in positioning of date code, type code and manufacture are possible. manufacturer 2005, june date code (year/month) bcr108s type code pin 1 marking laser marking 0.3 0.7 0.9 0.65 0.65 1.6 0.2 4 2.15 1.1 8 2.3 pin 1 marking +0.1 0.2 1 6 23 5 4 0.2 2 +0.1 -0.05 0.15 0.1 1.25 0.1 max. 0.9 0.1 a -0.05 6x 0.1 m 0.65 0.65 2.1 0.1 0.1 0.1 min. m 0.2 a pin 1 marking
2011-07-28 8 bcr48pn edition 2009-11-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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