tsz22111 ? 04 products to-220fm type RCX510N25 page 1/4 1.type RCX510N25 2.structure silicon n-channel mos fet 3.applications switching 4.absolute maximum ratings [ta=25 ] drain-source voltage v dss ??? 250v gate-source voltage v gss ??? 30v drain current continuous i d ??? 51a* pulsed i dp ??? 204a* pw Q 10 s duty cycle Q 1% source current continuous i s ??? 51a* (body diode) pulsed i sp ??? 204a* pw Q 10 s duty cycle Q 1% total power dissipation p d ??? 40w (tc=25 ) channel temperature t ch ??? 150 range of storage temperature t stg ??? 55 150 5. thermal resistance channel to case r th(ch-c) ??? 3.13 o c/w * limited only by maximum channel temperature allowed date 26/dec/2008 specification no.tsq03050-RCX510N25 design check approval rev. 0
products to-220fm type RCX510N25 page 2/4 6.electrical characteristics [ta=25 ] mosfet. parameter item condition min. typ. max. gate-source leakage i gss v gs 30v/v ds =0v 100na drain-source breakdown voltage v (br)dss i d =1ma /v gs =0v 250v zero gate voltage drain current i dss v ds =250v/v gs =0v 10 a gate threshold voltage v gs(th) v ds =10v/i d =1ma 3.0v 5.0v static drain-source on-state resistance r ds(on) * pulsed i d =25.5a/v gs =10v 48m 65m forward transfer admittance y fs * pulsed v ds =10v/i d =25.5a 15s input capacitance c iss 7000pf output capacitance c oss 350pf reverse transfer capacitance c rss v ds =25v v gs =0v f=1mhz 200pf turn-on delay time t d(on) * pulsed 65ns rise time t r * pulsed 300ns turn-off delay time t d(off) * pulsed 170ns fall time t f * pulsed v dd P 125v i d =25.5a v gs =10v r l =4.9 r g =10 see fig. 1-1,1-2 210ns total gate charge q g * pulsed 120nc gate-source charge q gs * pulsed 40nc gate-drain charge q gd * pulsed v dd P 125v i d =51a v gs =10v r l =2.5 /r g =10 see fig.2-1,2-2 40nc body diode (source-drain) parameter item condition min. typ. max. forward voltage v sd * pulsed i s =51a/v gs =0v 1.5v rev. 0 specification no.tsq03050-RCX510N25 tsz22111?05
tsz22111?05 products to-220fm type RCX510N25 page 3/4 7.inner circuit 8.marking rev. 0 specification no.tsq03050-RCX510N25 1 body diode (1) gate (2) drain (3) source production wee k production year 8 11 (1) (2) (3) n25 rcx510 1 (1) (2) (3)
tsz22111?05 products to-220fm type RCX510N25 page 4/4 9.measurement circuit fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform rev. 0 specification no.tsq03050-RCX510N25 d.u.t v gs r g r l v ds v dd i d d.u.t v gs r g r l v ds v dd i d
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