jiangsu changji ang electronics technology co., lt d sot -89-3l plastic-encapsulate transistors PXT2222A transistor (npn) feat ures z epit axial planar die construction z complementary pnp type available(pxt2907a) maximum ratings ( t a =25 unless otherwise noted) s ymbol parameter value unit v cbo collector-ba se vo ltage 75 v v ceo collector-emitter v oltage 40 v v ebo emitter-base volt age 6 v i c collector cur rent -continuous 600 ma p c collector power dissip ation 0.5 w t j junction t emperature 150 t stg s torage temperature -55 ~ 150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min max u nit co llector-b ase breakdown voltage v (b r)cb o i c = 1 0 a,i e = 0 75 v co llector-emitter b reakdown voltage v (b r)ce o i c = 10ma, i b = 0 40 v emitter-b ase breakdown voltage v ( br ) ebo i e =1 0 a, i c =0 6 v co llector cu t-off current i cb o v cb = 60v, i e =0 0. 01 a emitter cut-off current i ebo v eb = 5 v , i c = 0 0. 01 a h fe(1) v ce = 10v, i c = 0.1ma 35 h fe(2) v ce = 10v, i c = 1ma 50 h fe(3) v ce = 10v, i c = 10ma 75 h fe(4) v ce = 10v, i c = 150ma 100 300 h fe(5) v ce =1 v, i c = 150ma 50 dc cu rrent gain h fe(6) v ce = 10v, i c = 500ma 40 v ce (sa t ) i c = 500ma, i b = 50ma 1 v co llector-emitter satu ration voltage v ce (sa t ) i c = 150ma, i b =15ma 0.3 v v be( sat) i c = 500ma, i b =50ma 2.0 v bas e-emitter satu ration voltage v be( sat) i c = 150ma, i b =15ma 0.6 1.2 v t ran sition frequency f t v ce = 10v, i c = 20ma f=100mhz 300 mhz ou tput capacitance c ob v cb = 10v, i e = 0 ,f=1mhz 8 pf dela y time t d 10 ns rise time t r v cc = 30v, i c = 150ma v be( o f f ) =0 .5v,i b1 = 15ma 25 n s s tor age time t s 225 ns fall time t f v cc = 30v, i c = 150ma i b1 =- i b2 = 15ma 60 ns sot -89 -3l 1. base 2. col lector 3. emitter marking: 1p a,may, 201 1 www.cj-elec.com 1 a,jun,2014 www.cj-elec.com e,mar,2016
0 300 600 900 1200 0.1 1 10 100 11 0 1 0 0 300 600 900 1200 0 25 50 75 100 125 150 0 100 200 300 400 500 600 1 10 100 10 100 1000 11 0 1 0 0 10 100 1000 0.1 1 10 1 10 100 024681 0121416 0.00 0.05 0.10 0.15 0.20 0.25 1 10 100 10 100 com m on emitter v ce = 10v v be i c ? ? bese- em miter voltage v be (m v) collector current i c (ma) t a = 2 5 t a =1 0 0 600 =10 i c v be sat ? ? base- emit ter saturation voltage v bes at (mv) collector currem t i c (m a) t a =100 t a =25 600 p c ? ? t a am bient temperature t a ( ) co llect or power dissipation p c (mw) t a =100 t a =25 =10 i c v ce sat ? ? collector-emitter saturation vo lt age v ce s at (mv) collector currem t i c (m a) 600 i c h fe ? ? t a =100 t a =25 dc current gain h fe collector current i c (m a) comm on emitter v ce = 10v 600 f=1m hz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ? ? c ob c ib reverse vo lt age v (v) capacit ance c ( pf) 20 comm on emitter t a =25 1ma 900ua 800ua 700ua 600ua 500ua 400ua 300ua 200ua i b = 100ua collector current i c (a) collector-em itter voltage v ce (v) s t atic characteristic com m on emitter v ce =10v t a =25 collector current i c (m a) tra ns ition frequency f t (mhz ) 500 i c f t ? ? ty pical characteristics a,may , 2011 www.cj-elec.com 2 a,jun,2014 www.cj-elec.com e,mar,2016
min m a x min m a x a 1. 400 1. 600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. 62 7 / 3dfndjh2xwolqh'lphqvlrqv 62 7 / 6xjjhvwhg 3dg /d\rxw $0d\ www.cj-elec.com 3 a,jun,2014 www.cj-elec.com e,mar,2016
62 7 / 7dsh dqg 5hho $0d\ www.cj-elec.com 4 a,jun,2014 www.cj-elec.com e,mar,2016
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