d,nov,2011 jiangsu changjiang electronics technology co., lt d sot-89-3l plastic-encapsulate mosfets CJA9452 n-channel 20-v(d-s) mosfet description 50m@4.5v the advanced power mosfets provide the desigher with the best combination of fast switching, ruggedized device desigh, ultra low on- resistance and cost-effectiveness. maximum ratings (t a =25 unless otherwise noted) parameter symbol va lue unit drain-source voltage v ds 20 continuous gate-source vo ltage v gs 12 v continuous drain current i d 4 a power dissip a tion p d 0.5 w thermal resistance from junction to ambien t r ja 250 /w operating temperature t j 150 storage temperature t st g -55 ~+150 www.cj-elec.com 1 f , apr ,2015 marking equivalent circuit v (br) dss r ds(on) max i d 20 v ? 38 m @10v ? 4a 80m @ 2.5v ? so t -89- 3l 1. gate 2. drain 3. source
d,nov parameter symbol test conditi on min typ max unit off characteristics drain-source breakdo w n voltage v (br)dss v gs = 0v, i d =250a 20 v gate-body leakage i gss v ds =0v, v gs =12v 100 na zero gate voltage drain curre n t i dss v ds =20v, v gs =0v 1.0 a on characteristics gate-threshold voltage v gs(th) v ds =v gs , i d =0.25ma 0.70 1.50 v v gs =10v, i d =4a 0.038 v gs =4.5v, i d =4a 0.05 static drain-source on-resistance (note 1) r ds(on) v gs =2.5v, i d =3a 0.08 ? forward transc ond uctance (note 1) g fs v ds =5v, i d =3a 3 s dynamic char acte ristics (note 2) input capacitance c iss 570 output capac itance c oss 80 reverse transfer capacitance c rss v ds =20v,v gs =0v, f=1mhz 65 pf switching char act eristics turn-on delay time (note 1,2) t d(on) 8 rise time (note 2) t r 9 turn-off delay time (note 2) t d(off) 13 fall time (note 2) t f v gs =5v, v ds =10v, i d =1a, r gen =3.3 ?, r d =10 ? 3 ns drain-source body diode characteristics body diode forwar d vo ltage (note 1) v sd i s =1a, v gs = 0v 1.3 v no tes: 1. pulse test ; pulse wi d th 300s, duty cycle 2%. 2. these parameters have no way to verify. mosfet electrical characteristics a t =25 unless otherwise specified www.cj-elec.com 2 f,apr,2015
012345 0 5 10 15 20 024681 0 0 20 40 60 80 024681 0 0 20 40 60 80 0.2 0.4 0.6 0.8 1.0 1e-3 0.01 0.1 1 01234 0 5 10 15 20 25 50 75 100 125 0.5 0.6 0.7 0.8 v gs =4.5v,4.0v,3.5v,3.0v 2.5v 2.0v v gs =1.5v t a =25 pulsed output characteristics drain current i d (a) drain to source voltage v ds (v) i d =4a t a =25 pulsed v gs ?? r ds(on) on-resist ance r ds(on) (m ) gate to source voltage v gs (v) v gs =2.5v v gs =4.5v v gs =10v i d ?? r ds(on) t a =25 pulsed on-resist ance r ds(on) (m ) drain current i d (a) v sd i s ?? t a =25 pulsed source current i s (a) source to drain voltage v sd (v) v ds =5v t a =25 pulsed transfer c h aracteristics drain current i d (a) gate to source voltage v gs (v) threshol d vol tage i d =250ua threshold voltag e v th (v) junction temperature t j ( ) typical characteristics www.cj-elec.com 3 f,apr,2015
min m a x min m a x a 1. 400 1. 600 0. 055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 d 4.400 4.600 0.173 0.181 d1 e 2.300 2.600 0.091 0.102 e1 3.940 4.250 0.155 0.167 e e1 l 0.900 1.200 0.035 0.047 symbol dimensions in millimeters dimensions in inches 1.550 ref. 0.061 ref. 1.500 typ. 0.060 typ. 3.000 typ. 0.118 typ. sot-89-3l package outline dimensions sot-89-3l suggested pad layout www.cj-elec.com 4 f,apr,2015
sot-89-3l tape and reel www.cj-elec.com 5 f,apr,2015
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