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  ^e.mi-c.ond.ucto'i ^pi 2 0 ster n ave . springfield , ne w jerse y 0708 1 u.s.a . telephone : (973 ) 376-292 2 (212)227-600 5 fax : (973 ) 376-896 0 FD700/fdll70 0 fd777/fdll77 7 ultr a fas t diode s ? c.. . 1. 0 p f (max ) ? v r = 0, 1 = 1. 0 mh z (f d 700 ) ? t, r . . .70 0 p t (max ) @ l | ? i , - 1 0 ma , r l = 1001 1 (f d 700 ) ? controlle d forwar d conductanc e absolut e maximu m rating s (not e 1 ) temperature s fd70 0 storag e temperatur e rang e -65 c to+200 c ma x junctio n operatin g temperatur e +175 c lead temperatur e . +260 c powe r dissipatio n maximu m tota l dissipatio n a t 25c ambien t linea r deratin g factor (fro m 25c ) 1.6 7 maximu m voltage s an d current s wi v workin g invers e voltag e i q averag e rectifie d curren t t p forwar d curren t stead y stat e d c i f recurren t pea k forwar d curren t i f (surge ) pea k forwar d surg e curren t puls e width =1,0 s 25 0 m w mw/" c 20 v 60m a 150m a 160m a 250m a fd77 7 -65 c t o +200 c + 175" c +260 c 25 0 m w 1.67mw/ c 8.0 v 50m a 150m a 150m a 250m a package s fd70 0 fd77 7 fdll70 0 fdll77 7 do- 7 do- 7 ll-3 4 ll-3 4 i f yo u nee d thi s devic e i n th e so t package , a n electica l equivalen t i s available . se e fdso170 0 family . electrica l characteristic s (26 s c ambien t temperatur e unles s otherwis e noted ) symbo l v f b v i r t tr r c characteristi c forwar d voltag e breakdow n voltag e revers e curren t minorit y carrie r lifetim e revers e recover y tim e (not e 3 ) capacitanc e fd70 0 mi n 0.8 9 0.8 1 0.7 6 0.6 4 0.5 2 0.4 2 3 0 ma x 1.1 0 0.9 5 0.8 8 0.7 4 0.6 1 0.6 0 6 0 5 0 45 0 70 0 1. 0 fd77 7 mi n 0.8 9 0.8 1 0,7 8 0.6 4 0.5 2 0.4 2 1 6 ma x 1.3 5 1.0 0 0.9 4 0,7 9 0,6 4 0.5 3 10 0 5 0 45 0 75 0 1, 3 unit s v v v v vv v n a n a ,p ? p s p f tes t condition s i p = s o m a i f " 2 0 m a i f = 1 0 m a i f = 1.0m a i f " 0. 1 m a i f ? 0.0 1 m a i r = 5. 0 ji a v r " 2 0 v v r = 8. 0 v vp?20v , ta - 150? c v r = 8. 0 v , t a = 160' c (se e not e 2 ) i f = \ = 1 0 ma , h l = 10 0 0 v r - 0 , 1 - 1. 0 mh z note9 : .... _ ? . . .... _ _ b ? lmp?lr?d . 2 . m??ur* d m ?uflfl?l? d b y s . m . krikauir , ir e pr???d[ns? , volum t 60 , jur y 1962 , pp . 167 4 * 1676 . 3 . r*covnryto0. 1 ir . 4 . fo r produc t f unit y chiriclirltlt c curv** . r?(? r tochiptv r 4 , d3 , n j semi-conductor s reserve s th e righ t t o chang e tes t conditions , paramete r limit s an d packag e dimension s withou t notice . informatio n furnishe d b y n. i semi-conductor s i s believe d t o b e bot h accurat e an d reliabl e a t th e tim e o f goin g t o press . however , n j semi-conductor s assume s n o responsibilit y fo r an y error s o r omission s discovere d i n it s us e n. i semi-conductor s encourage s customer s t o verif y tha t datasheet s ar e curren t befor e pkicin e orders . qualit y semi-conductor s downloaded from: http:///
acka& e contou r optiona l withi n cylinde r o f diamete r i d an d engt h g . slugs , i f any , shal l b e include d withi n thi s tlinoe r bu t shal l no t b e subjec t t o th e minimu m limi t o f to. ea d diamete r no t controlle d i n thi s zon e t o allo w fo r flash , ea d finis h build-up , an o mino r irregularitie s othe r tha n lu c 5 . millimete r dimension s ar e derive d fro m origina l inc h dimension s syhbo l i b 1 0 6 i l l inche s h1n . max , .01 1 .08. 5 .21 0 1.00 0 - .02 2 .10 7 . jo o - .05 0 millimeter s ? min . hax t 0.45 ! 2.1 6 i.tt 25.1* 0 - t.fil 2.7 1 lit - 1 . 11 note s - 1 1 - 2 downloaded from: http:///


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