dmp 3028l k3 q document numbe r ds 3 9156 rev . 1 - 2 1 of 7 www.diodes.com august 2016 ? diodes incorporated dm p 3028l k3 q 30v p - channel enhancement mode mosfet product summary b v dss r ds (on ) max i d max t c = + 2 5 c - 30 v 2 5 m ? @ v gs = - 10 v - 2 7 a 38m ? @ v gs = - 4.5 v - 22 a description and applications this mosfet is designed to meet the stringent requirem ents of automotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? backlighting ? dc - dc converters ? power management f unctions features ? 100% unclamped inductive switch (uis) test in p roduction ? lo w on - r esistance ? fast s witching s peed ? totally lead - free & fully rohs c ompliant (note 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high r eliability ? ppap capable (note 4) mechanical data ? case: to252 (dpak) ? case material: molded pla stic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sen sitivity: level 1 per j - std - 020 ? terminals: matte tin finish a nnealed over copper l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.33 grams ( a pproximate) ordering information (note 5 ) product case packaging dmp 3028l k3 q - 13 to252 (dpak) 2,500 /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes .com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec - q101 qualified and are ppap capable. refer to http://www.di odes.com/product_compliance_definitions.html . 5 . for packaging details, go to our website at http://www.diodes.com/products/packages.html . marking information top view top view pin - out equivalent circuit = manufacturers marking p 3028l = product type marking code yyww = date code marking yy = year (ex: 16 = 20 16 ) ww = week (01 to 53) to252 (dpak) yyww p3028l . d s g g s d d e3
dmp 3028l k3 q document numbe r ds 3 9156 rev . 1 - 2 2 of 7 www.diodes.com august 2016 ? diodes incorporated dm p 3028l k3 q maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 30 v gate - source voltage v gss 20 v continuous drain current (note 7 ) v gs = - 10 v steady state t c = +25c t c = + 70 c i d - 27 - 22 a t<10s t a = +25c t a = +70c i d - 11 - 8.6 a maximum body diode continuous current i s - 2.5 a pulsed drain curren t ( 10 s p ulse, d uty c ycle = 1% ) i dm - 40 a avalanche current (note 8 ) l = 0.1mh i as - 22 a avalanche energy (note 8 ) l = 0.1mh e as 2 4 mj thermal charac teristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 6 ) t a = +25c p d 1.6 w t a = + 70 c 1.0 thermal resistance, junction to ambient (note 6 ) s teady state r ja 77 c/w t<10s 34 total power dissipation (note 7 ) t a = +25c p d 2.8 w t a = + 70 c 1. 8 thermal resistance, junction to ambient (note 7 ) s teady state r ja 45 c/w t<10s 29 thermal resistance, junction to case (note 7 ) r j c 4 . 5 operating a nd storage temperature range t j, t stg - 55 to +150 c electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 9 ) drain - source breakdown voltage bv dss - 30 gs = 0v, i d = - 250 a zero gate voltage drain current t j = + 25c i dss - 1 a v ds = - 30 v, v gs = 0v gate - source leakage i gss ? gs = ? ds = 0v on characteristics (note 9 ) gate threshold voltage v gs (th) - 1 ds = v gs , i d = - 250 a static drain - source on - resistance r ds(on) 20 25 m gs = - 10 v, i d = - 7 a 29 38 v gs = - 4 .5v, i d = - 6.2 a diode forward vol tage v sd - 0.7 - 1. 2 v v gs = 0v, i s = - 2. 1a dynamic characteristic s (note 10 ) input capacitance c iss 1241 ds = - 15 v, v gs = 0v f = 1.0mhz output capacitance c oss 147 pf reverse transfer capacitance c rss 110 pf gate resistance r g 1 5 ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 10 v ) q g 22 nc v ds = - 15 v , i d = - 7 a total gate charge ( v gs = - 4.5 v ) q g 11 nc gate - source charge q gs 3.5 nc gate - drain charge q gd 4.7 nc turn - on delay time t d( on ) 9.7 n s v gs = - 10 v, v d d = - 15v , r g en = 6 ? d = - 7 a turn - on rise time t r 17.1 ns turn - off delay time t d( off ) 60.5 ns turn - off fall time t f 40.4 ns notes: 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate. 8 . i a s and e a s rating s are based on low frequency and duty cycles to keep t j = + 25 c . 9 . short duration pulse test used to minimize self - heating effect. 10 . guaranteed by design. not subject to product testing.
dmp 3028l k3 q document numbe r ds 3 9156 rev . 1 - 2 3 of 7 www.diodes.com august 2016 ? diodes incorporated dm p 3028l k3 q - i , drain source current (a) figure 4 typical on - resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0 2 4 6 8 10 12 14 16 18 20 t = - 55c a t = 25c a t = 85c a t = 125 c a ???? t = 150 c a ? v = - 4.5v gs r ds(on) , drain - source on - resistance ( ? -v , drain -source voltage (v) figure 1 typical output characteristics ds - i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 0 1 2 3 4 5 v = -2.5v gs v = -3.0v gs v = -4.5v gs v = -4.0v gs v = -3.5v gs v = -10v gs v = -5.0v gs -v , gate-source voltage (v) gs figure 2 typical transfer characteristics - i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 0 1 2 3 4 5 t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds -i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 v = -4.5v gs v = -10v gs t , junction temperature ( c) j ? figure 5 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = -5v i = -5a gs d v = -10v i = -10a gs d t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0.05 -50 -25 0 25 50 75 100 125 150 v = -10v i = a gs d -10 v = v i = a gs d -5.0 -5.0
dmp 3028l k3 q document numbe r ds 3 9156 rev . 1 - 2 4 of 7 www.diodes.com august 2016 ? diodes incorporated dm p 3028l k3 q t , ambient temperature (c) figure 7 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.5 1 1.5 2 2.5 3 - 50 - 25 0 25 50 75 100 125 150 - i =1ma d - i = 250a d v gs(th) , gate threshold voltage (v) - v , drain - source voltage (v) figure 9 typical drain - source leakage current vs. voltage ds - i , l e a k a g e c u r r e n t ( n a ) d s s 0.1 1 10 100 1000 100 00 0 5 10 15 20 25 30 t = 150c a t = 125c a t = 85c a t = 25c a - i dss , leakage current ( n a) - v , drain - source voltage (v) ds figure 12 soa, safe operation area i , d r a i n c u r r e n t ( a ) d 0.01 0.1 1 10 100 0.1 1 10 100 dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c j(max) t = 25c a v = - 10v gs single pulse dut on 1 * mrp board r ds(on) limited - i d , drain curre nt (a) -v , source-drain voltage (v) figure 8 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s 0 5 10 15 20 0 0.2 0.4 0.6 0.8 1 1.2 t = 150 c a ? t = 125 c a ? t = 85 c a ? t = -55 c a ? t = 25 c a ? q , total gate charge (nc) figure 10 gate-charge characteristics g - v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 v = -15v i = -7a ds d c , j u n c t i o n c a p a c i t a n c e ( p f ) t -v , drain-source voltage (v) figure 11 typical junction capacitance ds 10 100 1000 10000 0 5 10 15 20 25 30 c iss
dmp 3028l k3 q document numbe r ds 3 9156 rev . 1 - 2 5 of 7 www.diodes.com august 2016 ? diodes incorporated dm p 3028l k3 q r j c (t) = r(t)* r j c r j c = 4 o c/w duty cycle, d = t1/t2 t1, pulse duration time (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 r (t) = r(t) * r thjc thjc r = 4c/w thjc duty cycle, d = t1/ t2 single pulse d = 0.005 d = 0.01 d = 0.02 d = 0.05 d = 0.1 d = 0.3 d = 0.5 d = 0.7 d = 0.9
dmp 3028l k3 q document numbe r ds 3 9156 rev . 1 - 2 6 of 7 www.diodes.com august 2016 ? diodes incorporated dm p 3028l k3 q package outline dimens ions please see http://www.diodes.com/package - outlines.html for the latest version. to252 (dpak) to252 (dpak) dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.64 0.88 0.783 b2 0.76 1.14 0.95 b3 5.21 5.46 5.33 c 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 - - e - - 2.286 e 6.45 6.70 6.58 e1 4.32 - - h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 - all dimensions in mm suggested pad layout please see http://www.diodes .com/package - outlines.html for the latest version. to252 (dpak) dimensions value (in mm) c 4.572 x 1.060 x1 5.632 y 2.600 y1 5.700 y2 10.700 b3 e l3 d l4 b2(2x) b(3x) e c a 7 1 h seating plane a1 gauge plane a 0.508 l 2.74ref d1 a2 e1 x1 x y2 y1 y c
dmp 3028l k3 q document numbe r ds 3 9156 rev . 1 - 2 7 of 7 www.diodes.com august 2016 ? diodes incorporated dm p 3028l k3 q important notice diodes incorporated makes no warranty of any kind, express or implied, wi th regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the r ight to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising out of the application or use of this d ocument or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such appli cations shall assu me all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoeve r in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its represen tatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered b y one or more united states, internation al or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into mul tiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical compone nts in life support devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the bod y, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is a ny component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertis e in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes inco rporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com
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