t4 - lds - 0009, rev . 3 (121484) ?201 2 microsemi corporation page 1 of 7 2n6849 available on commercial versions p- channel mosfet qualified per mil -prf- 19500/564 qualified levels : jan, jantx , jantxv and jans description this 2n68 49 switching transistor is military qualified up to the jan s level for high - reliability applications . th is device is also available in a low profile u surface mount package . microsemi also offers numerous other transistor products to meet higher and lower power ratings with variou s switching speed requirements in both through - hole and surface - mount packages. to - 205af ( to - 39 ) package also available in : u- 18 lcc package ( surface mount ) 2n68 49 u import ant: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n 6849 number . ? jan, jantx, jantxv and jans qualifications are available per mil - prf - 19500/564 . (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only). applications / benefits ? lightweight top - hat design with flexible terminals offers a variety of mounting flexibilit y. ? military and other high - reliability applications. m axim um ratings @ t a = +25oc unless otherwise stated msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit operating & storage junction temperature range t j & t stg - 55 to +150 c thermal resistance junction - to - case r ? jc 5.0 o c/w total power dissipation @ t a = +25 c @ t c = + 25 c (1) p t 0.8 25 w drain - source voltage, dc v ds - 100 v gate - source voltage, dc v gs 20 v drain current, dc @ t c = +25 oc (2) i d1 - 6.5 a drain current, dc @ t c = +100 oc (2) i d2 - 4.1 a off - state current (peak total value) (3) i dm - 25 a (pk) source current i s - 6.5 a notes: 1. derate linearly 0.2 w/c for t c > +25 c. 2. the following formula derives the maximum theoretical i d limit. i d is also limited by package and intern al wi res and may be limited due to pin diameter. 3 . i dm = 4 x i d1 as calculated in note 2. downloaded from: http:///
t4 - lds - 0009, rev . 3 (121484) ?201 2 microsemi corporation page 2 of 7 2n6849 mechanical and packaging ? case: hermetically sealed, k ovar base, n ickel cap. ? term inals: tin/ l ead solder dip nickel plate or rohs compliant pure t in plate (commercial grade only). ? marking: part number, d ate c ode, m anufacturers id. ? weight: approximately 1.064 grams. ? see p ackage d imensions on last page. part nomenclature jan 2n 6 849 (e3) reliability l evel jan = jan level jantx = jantx level jantxv = jantxv level jan s = jan s level blank = commercial jedec type number (see electrical characteristic s table) rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant symbols & definitions symbol definition di/dt rate of c hange of d iode c urrent while in reverse - recovery mode, recorded as maximum value. i f forward c urrent r g gate d rive i mpedance v dd drain s upply v oltage v ds drain s ource v oltage, dc v gs gate s ource v oltage, dc downloaded from: http:///
t4 - lds - 0009, rev . 3 (121484) ?201 2 microsemi corporation page 3 of 7 2n6849 electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off character is tics drain - source breakdown voltage v gs = 0 v, i d = -1 .0 ma v (br)dss - 100 v gate - source voltage (threshold) v ds v gs , i d = - 0.25 ma v ds v gs , i d = - 0.25 ma, t j = +125c v ds v gs , i d = - 0.25 ma, t j = - 55c v gs(th)1 v gs(th)2 v gs(th)3 - 2.0 - 1.0 - 4.0 - 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125c i gss1 i gss2 100 200 na drain current v gs = 0 v, v ds = - 80 v i dss1 - 25 a drain current v gs = 0 v, v ds = - 80 v, t j = +125 c i dss2 - 0.25 ma static drain - source on - state resistance v gs = - 10 v, i d = - 4.1 a pulsed r ds(on)1 0.30 ? static drain - source on - state resistance v gs = - 10 v, i d = - 6.5 a pulsed r ds(on)2 0.32 ? static drain - source on - state resistance t j = +125c v gs = - 10 v, i d = - 4.1 a pulsed r ds(on)3 0.54 ? diode forward voltage v gs = 0 v, i d = - 6.5 a pulsed v sd - 4.3 v dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = - 10 v, i d = - 6.5 a , v ds = - 50 v q g(on) 34.8 nc gate to source charge v gs = - 10 v, i d = - 6.5 a , v ds = - 50 v q gs 6.8 nc gate to drain charge v gs = - 10 v, i d = - 6.5 a , v ds = - 50 v q gd 23.1 nc downloaded from: http:///
t4 - lds - 0009, rev . 3 (121484) ?201 2 microsemi corporation page 4 of 7 2n6849 electrical characteristics @ t a = +25 c, unless otherwise noted (continued) switching characteristics parameters / test conditions symbol min. max. unit turn - on delay time i d = - 6.5 a, v gs = - 10 v, r g = 7.5 ? , v dd = -40 v t d(on) 60 ns rinse time i d = - 6.5 a, v gs = - 10 v, r g = 7.5 ? , v dd = -40 v t r 140 ns turn - off delay time i d = - 6.5 a, v gs = - 10 v, r g = 7.5 ? , v dd = -40 v t d(off) 140 ns fall time i d = - 6.5 a, v gs = - 10 v, r g = 7.5 ? , v dd = -40 v t f 140 ns diode reverse recovery time di/dt - 100 a/s, v dd - 50 v, i f = - 6.5 a t rr 250 ns downloaded from: http:///
t4 - lds - 0009, rev . 3 (121484) ?201 2 microsemi corporation page 5 of 7 2n6849 graphs t 1 , rectangle pulse duration (sec ond s) figure 1 C normalized t ransient t hermal i mpedance t c , c ase t emperature (c) figure 2 C maximum d rain c urrent vs c ase t emperature thermal response (z ? jc ) i d, drain current (a) downloaded from: http:///
t4 - lds - 0009, rev . 3 (121484) ?201 2 microsemi corporation page 6 of 7 2n6849 graphs (continued) v ds , drain - to - source voltage (volts) figure 3 C maximum s afe o perating a re a i d, drain current (a mperes) downloaded from: http:///
t4 - lds - 0009, rev . 3 (121484) ?201 2 microsemi corporation page 7 of 7 2n6849 package dimensions schematic notes: 1. dimensions ar e in inches. millimeters are given for general information only. 2. beyond radius (r) maximum, tw shall be held for a minimum length of 0 .011 (0.028 mm). 3. dimension tl measured from maximum hd. 4. outline in this zone is not controlled. 5. dimen sion cd shall not vary more than 0 .010 (0.25 mm) in zone p. this zone is controlled for automatic handling. 6. leads at gauge plane 0 .054 + 0 .001, -0 .000 (1.37 +0.03, - 0.00 mm) below seating plane shall be within 0 .007 (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at m mc. 7. lu applies between l1 and l2. ld applies between l2 and l l minimum. diameter is uncontrolled in l1 and beyond ll minimum. 8. all three leads. 9 . radius (r) applies to both inside corners of tab. 10. drain is electrically connected to the case. 11. in accordance with asme y14.5m, diameters are equivalent to x symbology. 12. lead 1 = source, lead 2 = gate, lead 3 = drain. dimensions symbol inch millimeters note min max min max cd 0.305 0.335 7.75 8.51 ch 0.16 0 0 .180 4.07 4.57 hd 0.335 0.370 8.51 9.39 lc 0.200 tp 5.08 tp 6 ld 0.016 0.021 0.41 0.53 7, 8 ll 0.500 0.750 12.70 19.05 7, 8 lu 0.016 0.019 0.41 0.48 7, 8 l1 - 0.050 - 1.27 7, 8 l2 0.250 - 6.35 - 7, 8 p 0. 100 - 2.54 - 5 q - 0.050 - 1.27 4 t l 0.029 0.045 0.74 1.14 3 tw 0.028 0.034 0.7 2 0.86 2 r - 0.010 - 0.25 9 45 tp 45 tp 6 downloaded from: http:///
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