this is information on a product in full production. september 2016 docid024631 rev 5 1/8 8 STPSC6H12 1200 v power schottky silicon carbide diode datasheet - production data features ? high frequency free-wheel / boost diode ? robust high-voltage periphery ? ultrafast high voltage switching independent of temperature description st's 1200 v high-performance rectifier is specifically designed to be used in photo-voltaic inverters or in applicat ions where negligible switching losses are required. the STPSC6H12 helps to increase the application efficiency yield by up to 2% thanks to its ability to work at high frequency whatever the temperature. the central lead of the dpak package is removed to meet the iec60664 and ul 840 standard requirements for a higher voltage. these characteristics make it the best-in-class 1200 v diode. . $ . . $ ' 3 $ . + 9 / table 1. device summary symbol value i f(av) 6 a v rrm 1200 v t j (max.) 175 c v f (6 a, 25 c) typ. 1.55 v c j (300 v) typ. 30 pf www.st.com
characteristics STPSC6H12 2/8 docid024631 rev 5 1 characteristics to evaluate the conduction loss es use the following equation: p = 0.89 x i f(av) + 0.285 x i f 2 (rms) table 2. absolute ratings (limiting values at 25 c unless otherwise specified) symbol parameter value unit v rrm repetitive peak reverse voltage 1200 v i f(rms) forward rms current 11 a i f(av) average forward current t c = 125 c, ? = 0.5, dc 6 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal, t c = 25 c t p = 10 ms sinusoidal, t c = 150 c t p = 10 s square, t c = 25 c 36 30 100 a i frm repetitive peak forward current ? = 0.1, t c = 125 c 28 a t stg storage temperature range -65 to +175 c t j operating junction temperature range (1) 1. condition to avoid thermal runaway for a diode on its own heatsink -40 to +175 c table 3. thermal resistance symbol parameter typ. max. unit r th(j-c) junction to case 1.3 1.9 c/w table 4. static electrical characteristics symbol parameter tests conditions min. typ. max. unit i r (1) 1. t p = 10 ms, ? < 2% reverse leakage current t j = 25 c v r = v rrm -100400 a t j = 150 c - 0.65 1.5 ma v f (2) 2. t p = 500 s, ? < 2% forward voltage drop t j = 25 c i f = 6 a -1.551.9 v t j = 150 c - 2.05 2.6 table 5. dynamic electrical characteristics symbol parameter test conditions typ. unit q cj (1) 1. most accurate value fo r the capacitive charge: total capacitive charge v r = 800 v 29 nc c j total capacitance v r = 0 v, t c = 25 c, f = 1 mhz 330 pf v r = 300 v, t c = 25 c, f = 1 mhz 30 dptot dtj < 1 rth(j-a) 4 f m y 5 g y 5 f m 3 9 2 8 7
docid024631 rev 5 3/8 STPSC6H12 characteristics figure 1. forward voltage drop versus forward current (typical values) figure 2. reverse leakage current versus reverse voltage applied (typical values) $ , ) 7 d ? & 7 d ? & 3 x o v h w h v w w s ? v 9 ) 0 9 , 5 ? $ ( ( ( ( ( ( ( 7 m ? & 7 m ? & 9 5 9 figure 3. peak forward current versus case temperature figure 4. junction capacitance versus reverse voltage applied (typical values) , 0 $ / 7 w s 7 & ? & |