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mosfet metaloxidesemiconductorfieldeffecttransistor optimos?power-transistor,25v 25voptimos?5powermosfet BSC0511NDI datasheet rev.2.0 final industrial&multimarket
BSC0511NDI dual n-channel optimos?5 mosfet features ? dual n-channel optimos? mosfet ? optimized for high performance buck converters ? logic level (4.5v rated) ? 100% avalanche tested ? qualified according to jedec 1) for target applications ? pb-free lead plating; rohs compliant ? halogen-free according to iec61249-2-21 ? integrated monolithic schottky-like diode maximum ratings 2) at t j =25 c, unless otherwise specified parameter symbol conditions unit q1 q2 continuous drain current i d t c =70?c, v gs =10?v 40 40 a t a =25?c, v gs =4.5?v 3) 19 33 t a =70?c, v gs =4.5?v 3) 15 26 t a =25?c, v gs =10?v 4) 15 26 pulsed drain current 5) i d,pulse t c =70?c 160 160 avalanche energy, single pulse e as q1: i d =20?a, q2: i d =20?a, r gs =25? w 12 90 mj gate source voltage v gs v power dissipation p tot t a =25?c 2) 2.5 2.5 w t a =25 c, minimum footprint 4) 1.0 1.0 operating and storage temperature t j , t stg c iec climatic category; din iec 68-1 value -55 ... 150 55/150/56 16 type package marking BSC0511NDI pg -tison-8 0511ndi vphase q1 q2 v ds 25 25 v r ds(on),max v gs =10 v 2.8 1.0 m w v gs =4.5 v 4.2 1.4 i d 40 40 a product summary rev.2.0 page 1 2015-03-04
BSC0511NDI parameter symbol conditions unit min. typ. max. thermal characteristics q1 r thjc - - 4.3 k/w q2 - - 1.7 q1 r thja q2q1 q2 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage q1q2 q1 q2 gate threshold voltage q1q2 zero gate voltage drain current q1 i dss - - 1 a q2 - - 500 q1 - - 0.1 ma q2 - 3 - gate-source leakage current q1 i gss q2q1 r ds(on) - 3.0 4.2 m w q2 - 1.0 1.4 q1 - 2.2 2.8 q2 - 0.8 1.0 gate resistance q1 r g - 0.7 1.2 w q2 - 1.1 1.8 transconductance q1 g fs 55 110 - s q2 75 150 - v v ds = v gs , i d =250?a na - v gs =16?v, v ds =0?v - v gs =4.5?v, i d =25?a v gs =10?v, i d =25?a d v (br)dss /d t j | v ds |>2| i d | r ds(on)max , i d =30?a v ds =20?v, v gs =0?v, t j =25?c v ds =20?v, v gs =0?v, t j =125?c 15 - mv/k values drain-source on-state resistance thermal resistance, junction - ambient 1) 6 cm 2 cooling area 3) 100 - - thermal resistance, junction - case minimal footprint, steady state 4) v (br)dss v gs =0?v, i d =10?ma v gs(th) breakdown voltage temperature coefficient i d =10?ma, referenced to 25?c 25 50 125 - - - - 1.2 1.6 2 v - rev.2.0 page 2 2015-03-04
BSC0511NDI parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance 6) q1 c iss - 780 1100 pf q2 - 2400 3300 output capacitance 6) q1 c oss - 390 530 q2 - 1400 1900 reverse transfer capacitance q1 c rss - 38 - q2 - 130 - turn-on delay time q1 t d(on) - 3 - ns q2 - 5 - rise time q1 t r - 3 - q2 - 5 - turn-off delay time q1 t d(off) - 13 - q2 - 26 - fall time q1 t f - 2 - q2 - 4 - gate charge characteristics gate to source charge q1 q gs - 2.0 - nc gate to drain charge q gd - 1.4 - gate charge total q g - 5.6 7.8 gate plateau voltage v plateau - 2.6 - v gate to source charge q2 q gs - 5.6 - nc gate to drain charge q gd - 4.3 - gate charge total q g 17 23 gate plateau voltage v plateau 2.3 - v output charge q1 q oss - 7.6 - nc q2 - 28 - values v gs =0?v, v ds = 12?v, f =1?mhz v dd =12?v, v gs =10?v, r g =1.6? w , i d =30?a v dd =12?v, i d =30?a, v gs =0?to 4.5?v v dd =12?v, v gs =0?v rev.2.0 page 3 2015-03-04
BSC0511NDI parameter symbol conditions unit min. typ. max. reverse diode q1 i s - - 29 a q2 - - 40 diode pulse current q1 i s,pulse - - 160 q2 - - 160 diode forward voltage q1 v sd v gs =0?v, i f =25?a, t j =25?c - 0.83 1 v q2 v gs =0?v, i f =11?a, t j =25?c - 0.48 0.7 reverse recovery charge q1 q rr - 5 - nc q2 - 5 - 1) j-std20 and jesd22 2) one transistor active 4) device mounted on a minimum pad (one layer, 70 m thick). one transistor active. 5) see figure 3 for more detailed information. 6) defined by design. not subject to production test diode continuous forward current values t c =25?c v r =12?v, i f =10?a, d i f /d t =400?a/s 3) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm2 (one layer, 70 m thick) copper area for drain conne ction. pcb is vertical in still air. rev.2.0 page 4 2015-03-04
BSC0511NDI 1 power dissipation (q1) 2 power dissipation (q2) p tot =f( t a ) 3) p tot =f( t a ) 3) 3 drain current (q1) 4 drain current (q2) i d =f( t c ) i d =f( t c ) parameter: v gs 10 v parameter: v gs 10 v 0 0.2 0.4 0.6 0.8 1 1.2 0 40 80 120 160 p tot [w] t a [ c] 0 10 20 30 40 50 0 40 80 120 160 i d [a] t c [ c] 0 0.2 0.4 0.6 0.8 1 1.2 0 40 80 120 160 p tot [w] t a [ c] 0 10 20 30 40 50 0 40 80 120 160 i d [a] t c [ c] rev.2.0 page 5 2015-03-04
BSC0511NDI 5 safe operating area (q1) 6 safe operating area (q2) i d =f( v ds ); t c =25 c; d =0 i d =f( v ds ); t c =25 c; d =0 parameter: t p parameter: t p 7 max. transient thermal impedance (q1) 8 max. transient thermal impedance (q2) z thjc =f( t p ) z thjc =f( t p ) parameter: d = t p / t parameter: d = t p / t 1 s 10 s 100 s 1 ms 10 ms dc 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 i d [a] v ds [v] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -2 10 -1 10 0 10 1 z thjc [k/w] t p [s] single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 -1 10 0 10 1 z thjc [k/w] t p [s] 1 s 10 s 100 s 1 ms 10 ms dc 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 10 3 i d [a] v ds [v] rev.2.0 page 6 2015-03-04
BSC0511NDI 9 typ. output characteristics (q1) 10 typ. output characteristics (q2) i d =f( v ds ); t j =25 c i d =f( v ds ); t j =25 c parameter: v gs parameter: v gs 11 typ. drain-source on resistance (q1) 12 typ. drain-source on resistance (q2) r ds(on) =f( i d ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 2.8 v 3 v 3.3 v 3.5 v 4 v 4.5 v 10 v 0 100 200 300 400 0 1 2 3 i d [a] v ds [v] 2.8 v 3 v 3.2 v 3.5 v 4 v 4.5 v 10 v 0 40 80 120 160 0 1 2 3 i d [a] v ds [v] 3 v 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 0.5 1 1.5 2 2.5 3 0 20 40 60 80 r ds(on) [m w ] i d [a] 3.3 v 3.5 v 4 v 4.5 v 5 v 10 v 0 1 2 3 4 5 6 7 8 0 20 40 60 r ds(on) [m w ] i d [a] rev.2.0 page 7 2015-03-04
BSC0511NDI 13 typ. transfer characteristics (q1) 14 typ. transfer characteristics (q2) i d =f( v gs ); | v ds |>2 | i d | r ds(on)max i d =f( v gs ); |v ds |>2 | i d | r ds(on)max parameter: t j parameter: t j 15 drain-source on-state resistance (q1) 16 drain-source on-state resistance (q2) r ds(on) =f( t j ); i d =25 a; v gs =10 v r ds(on) =f( t j ); i d =25 a; v gs =10 v 25 c 150 c 0 40 80 120 160 0 1 2 3 4 i d [a] v gs [v] 25 c 150 c 0 40 80 120 160 0 1 2 3 4 i d [a] v gs [v] typ 0 0.5 1 1.5 2 2.5 3 3.5 4 -60 -20 20 60 100 140 180 r ds(on) [m w ] t j [ c] typ 0 0.4 0.8 1.2 1.6 -60 -20 20 60 100 140 180 r ds(on) [m w ] t j [ c] rev.2.0 page 8 2015-03-04
BSC0511NDI 17 typ. gate threshold voltage (q1) 18 typ. gate threshold voltage (q2) v gs(th) =f( t j ); v gs = v ds ; i d =250 a v gs(th) =f( t j ); v gs = v ds ; i d =10 ma 19 typ. capacitances (q1) 20 typ. capacitances (q2) c =f( v ds ); v gs =0 v; f =1 mhz c =f( v ds ); v gs =0 v; f =1 mhz ciss coss crss 10 1 10 2 10 3 10 4 0 5 10 15 20 25 c [pf] v ds [v] ciss coss crss 10 1 10 2 10 3 10 4 0 5 10 15 20 25 c [pf] v ds [v] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -60 -20 20 60 100 140 180 v gs(th) [v] t j [ c] rev.2.0 page 9 2015-03-04
BSC0511NDI 21 forward characteristics of reverse diode (q1) 22 forward characteristics of reverse diode (q2) i f =f( v sd ) i f =f( v sd ) parameter: t j parameter: t j 23 avalanche characteristics (q1) 24 avalanche characteristics (q2) i as =f( t av ); r gs =25 w i as =f( t av ); r gs =25 w parameter: t j(start) parameter: t j(start) 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 0 10 1 10 2 i av [a] t av [s] 25 c 100 c 125 c 10 0 10 1 10 2 10 3 10 0 10 1 10 2 i av [a] t av [s] 25 c 150 c 10 -1 10 0 10 1 10 2 10 3 0 0.2 0.4 0.6 0.8 1 1.2 i f [a] v sd [v] - 55 c 25 c 100 c 150 c 10 -1 10 0 10 1 10 2 10 3 0 0.2 0.4 0.6 0.8 1 i f [a] v sd [v] rev.2.0 page 10 2015-03-04
BSC0511NDI 25 typ. gate charge (q1) 26 typ. gate charge (q2) v gs =f( q gate ); i d =20 a pulsed v gs =f( q gate ); i d =20 a pulsed parameter: v dd parameter: v dd 27 drain-source breakdown voltage (q1) 28 typ. drain-source leakage current (q2) v br(dss) =f( t j ); i d =1 ma i dss =f( v ds ); v gs =0 v parameter: t j 20 21 22 23 24 25 26 27 28 29 30 -60 -20 20 60 100 140 180 v br(dss) [v] t j [ c] 25 c 75 c 100 c 125 c 10 -6 10 -5 10 -4 10 -3 10 -2 0 5 10 15 20 i dss [a] v dsj [v] 5 v 12 v 20 v 0 2 4 6 8 10 0 2 4 6 8 10 12 v gs [v] q gate [nc] 5 v 12 v 20 v 0 2 4 6 8 10 0 10 20 30 40 v gs [v] q gate [nc] rev.2.0 page 11 2015-03-04
BSC0511NDI pg-tison rev.2.0 page 12 2015-03-04
BSC0511NDI pg-tison-8 rev.2.0 page 13 2015-03-04
15 25voptimos?5powermosfet BSC0511NDI rev.2.0,2015-03-09 revisionhistory BSC0511NDI revision:2015-03-09,rev.2.0 previous revision revision date subjects (major changes since last revision) 2.0 2015-03-09 release of final version welistentoyourcomments anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com publishedby infineontechnologiesag 81726mnchen,germany ?2015infineontechnologiesag allrightsreserved. legaldisclaimer theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.with respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. information forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestinfineon technologiesoffice( www.infineon.com ). warnings duetotechnicalrequirements,componentsmaycontaindangeroussubstances.forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. theinfineontechnologiescomponentdescribedinthisdatasheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.

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