m09207 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978 -442-560 0, fax: 978-937-3748 page 1 k band waveguide modulator tm ? copyright e? 2008 rev: 2008-11-04 featur es waveguide assembly high modulation depth gaas pin diode low drive voltage for low cost commercial applications specifications @ 25c insertion loss: 1.5 db typ. @ 20 ma modulation depth: >90% typ. frequency of operation: 24.125 ghz rf bandwidth: 200 mhz modulation rate: 1 hz C 100 khz drive voltage: 1.3 v @ 20 ma, typ. description microsemis MO9207 k-band modulator with integral gaas pin diode is designed for testing doppler transceivers on the bench and in the field. various radar cross sections may be simulated by attaching different size horn antennas to the modulator. maximum ratings operating t emperature -30c to +70c storage t emperature -40c to +85c drive current 50 ma downloaded from: http:///
m09207 microsemi microwave products 75 technology drive, lowell, ma. 01851, 978 -442-560 0, fax: 978-937-3748 page 2 k band waveguide modulator tm ? copyright e? 2008 rev: 2008-11-04 % modulation k band w aveguide modulator (MO9207) t y pical performance characteristics 120 110 100 90 80 70 60 50 40 MO9207 k band w aveguide modulator 0.820 (20.83) max. ug-595/u flange wr-42 waveguide solder pin 1.30 30 20 10 0 0 5 10 15 20 peak pin diode current (ma) 0.875 (22.2) 4x 0.120 thru [3.05] 0.875 (22.2) 0.125 max. (3.18) max. (33.02) m odula t ion c hara c t eri s ti c modulator driver the modulation driver should be current limited to 50 ma pulse current. for a drive current of 20 ma from a 50-ohm modulator operating at 5 volts a 120-ohm resistor should be inserted in series with the pin diode. dimensions are in inches (mm). flange mates with ug-595/u wr-42. delivered with grounded buss wire for esd protection. on on + 0 of f o ff positive drive is applied to the solder pin on top of unit. ground is any metallic contact on the waveguide. downloaded from: http:///
|
