jul . 20 1 2 version 1.0 magnachip semiconductor ltd . 1 m dv152 9 e C single n - channel trench mosfet 30v absolute maximu m ratings (ta = 25 o c unless otherwise specified ) characteristics symbol rating unit drain - source voltage v dss 3 0 v gate - source voltage v gss 20 v continuous drain current (1) t c =25 o c (silicon limited) i d 56. 4 a t c =25 o c (package limited) 28 t c =70 o c 28 pulsed drain current i dm 84 a power dissipation t c =25 o c p d 27.7 w t c =70 o c 17.7 single pulse avalanche energy (2) e as 136 mj junction and storage temperature range t j , t stg - 55~150 o c thermal characteristics characteristics symbol rating unit thermal resistance, junction - to - ambient (1) r ja 36 o c/w thermal resistance, junction - to - case r jc 4.5 mdv152 9 e single n - channel trench mosfet 3 0 v, 28 a, 4. 5 m features ? v ds = 3 2 v ? i d = 2 8 a @v gs = 10v ? r ds(on) < 4. 5 m @v gs = 10v < 6.5 m @v gs = 4.5v general description the mdv152 9 e uses advanced magnachip s mosfet technology, which provide s high performance in on - state resistance , fast switching performance and excellent quality . mdv152 9 e is suitable for dc/dc converter and general purpose applications. pdfn 33 s s s g g s s s d d d d d d d d d g s
jul . 20 1 2 version 1.0 magnachip semiconductor ltd . 2 m dv152 9 e C single n - channel trench mosfet 30v ordering information p art number temp. range package packing quantity ro hs status mdv152 9 e u rh - 55~150 o c pdfn33 tape & reel 5000 units h alogen free electrical characteristics ( ta = 25 o c unless otherwise specified ) characteristics symbol test condition min typ max unit static characteristics drain - source breakdown voltage bv dss i d = 250a, v gs = 0v 3 2 - - v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1. 3 1.9 2.7 drain cut - off current i dss v ds = 32 v, v gs = 0v - - 1 0 a gate leakage current i gss v gs = 16 v, v ds = 0v - - 10 drain - source on resistance r ds(on) v gs = 10v, i d = 16 a - 3.7 4. 5 m v gs = 4.5v, i d = 13 a - 5.2 6. 5 dynamic characteristics total gate charge q g(10v) v ds = 1 5.0 v, i d = 16 a, v gs = 10v - 44 .0 - nc total gate charge q g(4.5v) - 22.5 - gate - source charge q gs - 7.0 - gate - drain charge q gd - 11 .0 - input capacitance c iss v ds = 1 5.0 v, v gs = 0v, f = 1.0mhz - 2050 - pf reverse transfer capacitance c rss - 290 - output capacitance c oss - 410 - turn - on delay time t d(on) v gs = 10v, v ds = 1 5.0 v, i d = 16 a, r g = 3 . 0 - 9.0 - ns rise time t r - 5.5 - tu r n - off delay time t d(off) - 250 - fall time t f - 215 - drain - source body diode characteristics source - drain diode forward voltage v sd i s = 16 a, v gs = 0v - 0. 7 1. 2 v note : 1. surface mounted fr - 4 board by jedec (jesd51 - 7) 2. e as is tested at starting tj = 25 , l = 0.1mh, i as = 30.4a, v dd = 27v, v gs = 10v .
jul . 20 1 2 version 1.0 magnachip semiconductor ltd . 3 m dv152 9 e C single n - channel trench mosfet 30v fig.1 on - region characteristics fig.3 on - resistance variation with temperature fig.5 transfer characteristics fig.4 on - resistance variation with gate to source voltage fig.2 on - resistance variation with drain current and gate voltage fig.6 body diode forward voltage variation with source current and temperature 0 1 2 3 4 5 0 4 8 12 16 20 v gs , gate-source voltage [v] t a =25 notes : v ds = 5v i d , drain current [a] -50 -25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 notes : 1. v gs = 10 v 2. i d = 16.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 notes : i d = 16.0a t a = 25 r ds(on) [m ], drain-source on-resistance v gs , gate to source volatge [v] 5 10 15 20 0 1 2 3 4 5 6 7 8 v gs = 10v v gs = 4.5v drain-source on-resistance [m ? ] i d , drain current [a] 0.0 0.5 1.0 1.5 2.0 0 10 20 8.0v 4.0v v gs = 10v 4.5v 3.5v 3.0v i d , drain current [a] v ds , drain-source voltage [v] 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 10 -1 10 0 10 1 t a =25 notes : v gs = 0v i dr , reverse drain current [a] v sd , source-drain voltage [v]
jul . 20 1 2 version 1.0 magnachip semiconductor ltd . 4 m dv152 9 e C single n - channel trench mosfet 30v fig.8 capacitance characteristics fig.7 gate charge characteristics fig.9 maximum safe operating area fig.10 maximum drain current vs. case temperature fig.11 transient thermal response curve 0 5 10 15 20 25 0 500 1000 1500 2000 2500 3000 3500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 10 20 30 40 50 60 70 80 i d , drain current [a] t c , case temperature [ ] 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 1 notes : duty factor, d=t 1 /t 2 peak t j = p dm * z jc * r jc (t) + t c single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ja (t), thermal response t 1 , rectangular pulse duration [sec] 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 v ds = 15v note : i d = 16a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 10 2 10 -1 10 0 10 1 10 2 100s 10s 100ms 10ms dc 1s operation in this area is limited by r ds(on) single pulse t j =max rated t c =25 i d , drain current [a] v ds , drain-source voltage [v]
jul . 20 1 2 version 1.0 magnachip semiconductor ltd . 5 m dv152 9 e C single n - channel trench mosfet 30v package dimension powerdfn33 (3.3x3.3mm) d imensions are in millimeters, unless otherwise specified (unit: mm)
jul . 20 1 2 version 1.0 magnachip semiconductor ltd . 6 m dv152 9 e C single n - channel trench mosfet 30v disclaimer: the products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any product can reasonably be expected to result in a personal injury. sellers customers using or selling sellers products for use in such applications do so at their own risk and agree to fully defend and indemnify seller. magnachip reserves the right to change the specifications and circuitry without notice at any time. magnachip does not consid er responsibility for use of any circuitry other than circuitry entirely included in a magnachip product. is a registere d trademark of magnachip semiconductor ltd.
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