ao4616 30v complementary mosfet general description product summary n-channel p-channel v ds = 30v -30v i d = 8a (v gs =10v) -7a (v gs =-10v) r ds(on) r ds(on) < 20m (v gs =10v) < 22m (vgs=-10v) < 28m (v gs =4.5v) < 40m (vgs=-4.5v) 100% uis tested 100% uis tested 100% r g tested 100% r g tested esd protected symbol v ds v gs i dm i as , i ar e as , e ar t j , t stg symbol t 10s steady-state steady-state r q jl parameter 2 1.3 the ao4616 uses advanced trench technology to provi de excellent r ds(on) and low gate charge. this complementary n and p channel mosfet configuration is ideal for low input voltage inverter application s. absolute maximum ratings t a =25c unless otherwise noted max n-channel max p-channel units v w t a =25c t a =70c p d pulsed drain current c continuous drain current i d -30 drain-source voltage 30 v c/w r q ja 48 -6 -40 mj units 62.5 27 36 20 -7 8 6.5 t a =25c avalanche energy l=0.1mh c c aa 1.3 -55 to 150 max 40 19 18 2 gate-source voltage maximum junction-to-ambient a thermal characteristics 20 t a =70c avalanche current c junction and storage temperature range power dissipation b parameter typ maximum junction-to-lead c/w c/w maximum junction-to-ambient a d 32 40 74 90 soic-8 top view bottom view pin1 g1 d1 s1 n-channel p-channel g2 d2s2 g1 s1 g2 s2 d1 d1 d2 d2 top view rev 2: jan. 2011 www.aosmd.com page 1 of 9
ao4616 symbol min typ max units bv dss 30 v v ds =30v, v gs =0v 1 t j =55c 5 i gss 10 m a v gs(th) gate threshold voltage 1.2 1.8 2.4 v i d(on) 40 a 16.5 20 t j =125c 23 28 19.5 28 m w g fs 30 s v sd 0.75 1 v i s 2.5 a c iss 600 740 888 pf c oss 77 110 145 pf c rss 50 82 115 pf r g 0.5 1.1 1.7 w q g (10v) 12 15 18 nc q g (4.5v) 6 7.5 9 nc q gs 2.5 nc q gd 3 nc t d(on) 5 ns t r 3.5 ns t d(off) 19 ns t f 3.5 ns t rr 6 8 10 ns q rr 14 18 22 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =8a, di/dt=500a/ m s v gs =0v, v ds =15v, f=1mhz switching parameters n-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions body diode reverse recovery time drain-source breakdown voltage v gs =4.5v, i d =6a i d =250 m a, v gs =0v v gs =10v, v ds =5v v gs =10v, i d =8a r ds(on) static drain-source on-resistance i dss m a v ds =v gs i d =250 m a v ds =0v, v gs =16v zero gate voltage drain current gate-body leakage current m w on state drain current i s =1a,v gs =0v v ds =5v, i d =8a forward transconductance diode forward voltage gate resistance v gs =0v, v ds =0v, f=1mhz reverse transfer capacitance turn-off fall time total gate charge v gs =10v, v ds =15v, i d =8a gate source charge gate drain charge total gate charge body diode reverse recovery charge i f =8a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =1.8 w , r gen =3 w a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's spec ific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 2: jan. 2011 www.aosmd.com page 2 of 9
ao4616 n-channel: typical electrical and thermal characteristics 17 52 10 0 18 40 0 5 10 15 20 25 30 1 1.5 2 2.5 3 3.5 4 v gs (volts) figure 2: transfer characteristics (note e) i d (a) 10 15 20 25 30 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics (note e) i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =10v i d =8a v gs =4.5v i d =6a 10 15 20 25 30 35 40 0 2 4 6 8 10 v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =5v v gs =4.5v v gs =10v i d =8a 25c 125c 0 5 10 15 20 25 30 0 1 2 3 4 5 v ds (volts) fig 1: on-region characteristics (note e) i d (a) v gs =2.5v 10v 3v 3.5v 4v rev 2: jan. 2011 www.aosmd.com page 3 of 9
ao4616 n-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 3 6 9 12 15 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =15v i d =8a 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to-ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90c/w t on t p d rev 2: jan. 2011 www.aosmd.com page 4 of 9
ao4616 - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr rev 2: jan. 2011 www.aosmd.com page 5 of 9
ao4616 symbol min typ max units bv dss -30 v v ds =-30v, v gs =0v -1 t j =55c -5 i gss 100 na v gs(th) gate threshold voltage -1.4 -2.0 -2.5 v i d(on) -40 a 17.5 22 t j =125c 24.5 33 27.5 40 m w g fs 24 s v sd -0.75 -1 v i s -2.5 a c iss 830 1040 1250 pf c oss 125 180 235 pf c rss 75 125 175 pf r g 2 4 6 w q g (10v) 15 19 23 nc q g (4.5v) 7.5 9.6 12 nc q gs 3.6 nc q gd 4.6 nc t d(on) 10 ns t r 5.5 ns t d(off) 26 ns t f 9 ns t rr 11.5 15 ns q rr 25 32.5 nc this product has been designed and qualified for th e consumer market. applications or uses as critical components in life support devices or systems are n ot authorized. aos does not assume any liability ar ising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. body diode reverse recovery charge i f =-7a, di/dt=500a/ m s maximum body-diode continuous current input capacitance output capacitance turn-on delaytime dynamic parameters turn-on rise time turn-off delaytime v gs =10v, v ds =-15v, r l =2.2 w , r gen =3 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-off fall time total gate charge v gs =10v, v ds =-15v, i d =-7a gate source charge gate drain charge total gate charge v ds =v gs i d =-250 m a r ds(on) static drain-source on-resistance m w forward transconductance i s =-1a,v gs =0v v ds =-5v, i d =-7a v gs =-4.5v, i d =-3.5a diode forward voltage p-channel electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i dss m a v ds =0v, v gs =20v zero gate voltage drain current gate-body leakage current body diode reverse recovery time drain-source breakdown voltage on state drain current i d =-250 m a, v gs =0v v gs =-10v, v ds =-5v v gs =-10v, i d =-7a reverse transfer capacitance i f =-7a, di/dt=500a/ m s v gs =0v, v ds =-15v, f=1mhz switching parameters a. the value of r q ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air enviro nment with t a =25c. the value in any given application depends on the user's spec ific board design. b. the power dissipation p d is based on t j(max) =150c, using 10s junction-to-ambient thermal resistance. c. repetitive rating, pulse width limited by junct ion temperature t j(max) =150c. ratings are based on low frequency and duty cycles to keep initialt j =25c. d. the r q ja is the sum of the thermal impedence from junction to lead r q jl and lead to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 m s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-ambien t thermal impedence which is measured with the devi ce mounted on 1in 2 fr-4 board with 2oz. copper, assuming a maximum junction temperatur e of t j(max) =150c. the soa curve provides a single pulse ratin g. rev 2: jan. 2011 www.aosmd.com page 6 of 9
ao4616 p-channel: typical electrical and thermal characteristics 17 52 10 0 18 40 0 10 20 30 40 0 1 2 3 4 5 -v gs (volts) figure 2: transfer characteristics (note e) -i d (a) 10 15 20 25 30 35 40 0 5 10 15 20 -i d (a) figure 3: on-resistance vs. drain current and gate voltage (note e) r ds(on) (m w ww w ) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -v sd (volts) figure 6: body-diode characteristics (note e) -i s (a) 25c 125c 0.8 1 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature (note e) normalized on-resistance v gs =-4.5v i d =-3.5a v gs =-10v i d =-7a 10 20 30 40 50 60 2 4 6 8 10 -v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) r ds(on) (m w ww w ) 25c 125c v ds =-5v v gs =-4.5v v gs =-10v i d =-7a 25c 125c 0 10 20 30 40 50 60 0 1 2 3 4 5 -v ds (volts) fig 1: on-region characteristics (note e) -i d (a) v gs =-3v -3.5v -10v -5v -7v -4.5v rev 2: jan. 2011 www.aosmd.com page 7 of 9
ao4616 p-channel: typical electrical and thermal characteristics 0 2 4 6 8 10 0 5 10 15 20 q g (nc) figure 7: gate-charge characteristics -v gs (volts) 0 200 400 600 800 1000 1200 1400 1600 0 5 10 15 20 25 30 -v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =-15v i d =-7a 1 10 100 1000 0.00001 0.001 0.1 10 1000 pulse width (s) figure 10: single pulse power rating junction-to-ambient (note f) power (w) t a =25c 0.0 0.1 1.0 10.0 100.0 0.01 0.1 1 10 100 -v ds (volts) -i d (amps) figure 9: maximum forward biased safe operating area (note f) 10 m s 10s 1ms dc r ds(on) limited t j(max) =150c t a =25c 100 m s 10ms 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) z q qq q ja normalized transient thermal resistance in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =90c/w t on t p d rev 2: jan. 2011 www.aosmd.com page 8 of 9
ao4616 vdc ig vds dut vdc vgs vgs qg qgs qgd charge gate charge test circuit & waveform - + - + -10v vdd vgs id vgs rg dut vdc vgs vds id vgs unclamped inductive switching (uis) test circuit & waveforms vds l - + 2 e = 1/2 li ar ar bv dss i ar ig vgs - + vdc dut l vgs isd diode recovery test circuit & waveforms vds - vds + di/dt rm rr vdd vdd q = - idt t rr -isd -vds f -i -i vdc dut vdd vgs vds vgs rl rg resistive switching test circuit & waveforms - + vgs vds t t t t t t 90% 10% r on d(off) f off d(on) rev 2: jan. 2011 www.aosmd.com page 9 of 9
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