w w w w fp2n6 fp2n6 fp2n6 fp2n6 0 0 0 0 b b b b c o p y r igh t @ w i n s em i microelectronics c o . , lt d . , a l l ri g h t r e s er v ed . silic silic silic silic o o o o n n n n n-c n-c n-c n-c h h h h a a a a n n n n nel nel nel nel mos mos mos mos f f f f et et et et featur e s 2a,600 v , r ds(on ) (max 5 )@ v gs =10v ultra-low gate charge( t y pical 9.0nc) fast s w i t ching capabi l ity 100% a v al anche t es ted maximum junction t e mperature range(15 0 ) gen e ral descr i ption this po w e r mosfet is produced using winsemi s advanced planar stripe, vdmos technolog y . this latest technology has been especial l y designed to minimize on-sta t e resistance, have a high rugged avalanche characteristics. this devices is special l y w e ll suited for high e f f i ciency s w i tch mode po w e r suppl y . abs o lute maxim u m rati n gs g g g g d d d d s s s s t t t t o o o o 220 220 220 220 symbol parameter v al ue units v dss drain source v o ltage 600 v i d continuous drain current( @ t c =25 ) 2.0 a continuous drain current( @ t c =100 ) 1.3 a i dm drain current pulsed (note1) 8 a v gs gate to source v o ltage 30 v e as sing l e pulsed a v a lanche energy ( note 2) 140 mj e ar repetitive a v a lanche energy ( note 1) 6.4 mj dv/dt peak diode recovery dv/dt (note 3) 5 .5 v/ns p d t o tal po w e r diss i pation(@ t c =25 ) 54 w derating factor above 25 0.43 w/ t j , t s tg junction and storage t e mperature -55~150 t l maximum lead t e mperature for soldering purposes 300 thermal ch a racter i stics symbol parameter v al ue units min t y p max r q j c thermal resistance, junction-to-case - - 2.3 /w r qcs thermal resistance, case-to-sink 0.5 - - /w r q j a thermal resistance, junction-to-ambient - - 62.5 /w re v . d no v . 20 0 9 t02-2
w w w w fp2n6 fp2n6 fp2n6 fp2n6 0 0 0 0 b b b b steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 2 /7 electric a l ch a racter i stics (tc = 2 5 c) char a cteristics symbol test cond i tion min typ. max unit gate leakage current i gss v gs = 30 v, v ds = 0 v - - 100 n a gate ? source breakdo w n voltage v (br)gss i g = 10 a, v ds = 0 v 30 - - v drain cu t ? off current i dss v ds = 600 v, v gs = 0 v - - 10 a v ds = 480 v, tc = 12 5 c - - 100 a drai n ? source breakdo w n voltage v (br) d ss i d = 250 a, v gs = 0 v 6 00 - - v break voltage temperature coefficient bv dss / t j i d =25 0 a, referenced to 25 - 0.5 - v/ gate threshold voltage v gs(th) v ds = 10 v, i d =250 a 2 - 4 v drai n ? source on resistance r ds(on) v gs = 10 v, i d =1a - 4.5 5 ? for w a rd transconductance gfs v ds = 50 v, i d =1a - 2.25 - s input capacitance c i s s v ds = 25 v, v gs = 0 v, f = 1 mhz - 190 230 pf reverse trans f er capacitance c r s s - 1.8 2.1 output capacitance c o s s - 15 20 s w i t ching time rise time t r v dd =3 0 0 v, i d = 2 a r g =25 ? (note4,5) - 23 45 ns tur n ? on time t on - 7 23 fall time t f - 24 46 tur n ? off time t off - 22 43 total gate charge (gat e ? source plus gat e ? drain) q g v dd = 320 v, v gs = 10 v, i d = 2 a (note4,5) - 9.0 1 2 nc gate ? source charge q gs - 1.7 - gate ? drain ( mil l er ) charge q gd - 4.5 - so u rce ? dra i n rati n gs and ch a racter i stics (ta = 2 5 c) char a cteristics symbol test cond i tion min type max unit continuous drain re v erse current i dr - - - 2 a pulse drain re v erse current i drp - - - 8 a for w a rd voltage (diode) v dsf i dr = 2 a, v gs = 0 v - - 1.4 v reverse reco v ery time t rr i dr = 2 a, v gs = 0 v, di dr / dt = 100 a / s - 180 - n s reverse reco v ery charge q rr - 0.72 - c note 1.repeativity rating :pulse w i dth lim i ted by j unction tempera t ure 2.l=18 . 5mh,i a s =2 . 0a,v dd =50 v , r g =0 ,star t ing t j =25 3.i sd 2 . 0a,di/d t 200a/us, v d d w w w w fp2n6 fp2n6 fp2n6 fp2n6 0 0 0 0 b b b b steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 3 /7 fig. 1 on-st a t e cha r a cteristics fig.2 t r ans fe r cu r r e nt cha r a cteristics fig.3 on- r e sistance v a ri a ti on vs d ra in cu r r e nt fig.5 on- r e sistance v a ri a ti on vs j u nction t e mpe r a tu r e f ig .4 b od y d io de f or w a r d v olt a g e v ar i a tion v s . s ou r c e c u r r en t a n d t em p e r atu r e fig.6 g a t e cha r g e cha r a cteris tics
w w w w fp2n6 fp2n6 fp2n6 fp2n6 0 0 0 0 b b b b steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 4 /7 fig.7 maximum sa f e ope r at ion a re a fig.8 maximum d ra in cu r r e nt vs case t e mpe r a tu r e fig.9 t r ansient t h e r m al r e sponse cu r v e
w w w w fp2n6 fp2n6 fp2n6 fp2n6 0 0 0 0 b b b b steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 5 /7 fig.10 g a t e t e st ci rcu it & w a v e f o r m fig.11 r e sisti v e swit c h ing t e st ci rcu it & w a v e f o r m fig.12 un c l amped inducti v e swit c h ing t e st ci rcu it & w a v e f o r m
w w w w fp2n6 fp2n6 fp2n6 fp2n6 0 0 0 0 b b b b steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 6 /7 fig.13 p e ak diode r e c ov e r y dv/dt t e st ci rcu it & w a v e f o r m
w w w w fp2n6 fp2n6 fp2n6 fp2n6 0 0 0 0 b b b b steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance steady, steady, steady, steady, keep keep keep keep you you you you advance advance advance advance 7 /7 t t t t o- o- o- o- 220 220 220 220 pa pa pa pa c c c c kage kage kage kage dimension dimension dimension dimension uni uni uni uni t: t: t: t: mm mm mm mm
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