2007. 6. 29 1/4 semiconductor technical data KMB014P30QA p-ch trench mosfet revision no : 1 general description this trench mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. it is mainlysuitable for battery pack. features h v dss =-30v, i d =-14a. h drain-source on resistance. r ds(on) =12m ? (max.) @ v gs =-10v r ds(on) =18m ? (max.) @ v gs =-4.5v h super high dense cell design mosfet maximum ratings (ta=25 ? unless otherwise noted) flp-8 0.20+0.1/-0.05 p t 1.27 u 0.1 max millimeters 0.4 0.1 0.15+0.1/-0.05 4.85 0.2 b2 gh l d a b1 dim 6.02 0.31.63 0.2 0.65 0.2 3.94 0.2 + _ + _ + _ + _ + _ + _ g h b1 b2 1 4 5 8 a p d l t u note : *surface mounted on fr4 board pin connection (top view) 12 3 4 87 6 5 ss s g dd d d 12 3 4 87 6 5 characteristic symbol rating unit drain source voltage v dss -30 v gate source voltage v gss ? 20 v drain current dc i d * -14 a pulsed i dp -70 a drain source diode forward current i s -1.7 a drain power dissipation p d * 2.5 w maximum junction temperature t j 150 ? storage temperature range t stg -55~150 ? thermal resistance, junction to ambient r thja * 50 ? /w 706 kmb014p 30qa downloaded from: http:///
2007. 6. 29 2/2 KMB014P30QA revision no : 1 electrical characteristics (ta=25 ? ) unless otherwise noted characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i ds =-250 a, v gs =0v -30 - - v drain cut-off current i dss v ds =-24v, v gs =0v - - -1 a gate leakage current i gss v gs = ? 25v, v ds =0v - - ? 100 na gate threshold voltage v th v ds =v gs, i d =-250 a -1.4 -1.9 -2.6 v drain-source on resistance r ds(on)* v gs =-10v, i d =-12a - 8.5 12.0 m ? v gs =-4.5v, i d =-10a - 12 18 on-state drain current i d(on)* v ds =-5v, v gs =-10v -50 - - a forward transconductance g fs* v ds =-5v, i d =-10a - 14 - s dynamic input capaclitance c iss v ds =15v, v gs =0v, f=1mhz - 3625 - pf ouput capacitance c oss - 980 - reverse transfer capacitance c rss - 705 - total gate charge q g* v ds =-15v, v gs =-10v, i d =-12a - 65.5 - nc v ds =-15v, v gs =-4.5v, i d =-12a - 32.6 - gate-source charge q gs* v ds =-15v, v gs =-10v, i d =-12a - 10.9 - gate-drain charge q gd* - 17.5 - turn-on delay time t d(on)* v dd =-15v, v gs =-10v r l =12a, r g =3 ? - 48.5 - ns turn-on rise time t r* - 20.3 - turn-off delay time t d(off)* - 110.8 - turn-off fall time t f* - 52.8 - source-drain diode ratings source-drain forward voltage v sdf* v gs =0v, i dr =-1.7a, - -0.73 -1.2 v note1. pulse test : pulse width ? 10 k , duty cycle ? 1% downloaded from: http:///
2007. 6. 29 3/4 KMB014P30QA revision no : 1 gate - source voltage v gs (v) fig 1. i d - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 0 0.5 5 10 15 2520 1.0 1.5 2.0 2.5 3.0 5 15 0 10 2520 1.2 2.4 03 . 6 0.6 1.8 3.0 fig 2. i d - v gs drain current i d (a) drain current i d (a) fig 4. r ds(on) - t j -55 -25 25 50 75 125 100 0 capacitance (pf) normalized threshold voltage v th fig 5. v th - t j fig 3. c - v ds -50 -25 0.6 0.8 0.90.7 1.31.0 1.1 1.2 0.6 0.8 1.4 1.81.0 1.61.2 05 01 0 0 25 25 125 75 10 15 05 2 0 3 0 normalized on resistance junction temperature tj ( ) c junction temperature tj ( ) c 0 1000 60005000 2000 3000 4000 25 c -55 c 125 c -v gs =4.5v -v gs =10v -v gs =4v -v gs =3.5v -v gs =3v c oss c iss c rss v ds = v gs i ds = 250 a v gs =-10v i d = -12a fig 6. i dr - v sd 1 10 20 0.2 0.8 1.2 0.6 1.0 0.4 v gs = 0v reverse source-drain current i dr (a) source-drain forword voltage v sdf (v) downloaded from: http:///
2007. 6. 29 4/4 KMB014P30QA revision no : 1 total gate charge q g (nc) 0 10 62 4 8 88 66 22 44 0 77 33 55 11 fig 7. q g - v gs gate - source voltage v gs (v) v ds = -15v i d = -12a square wave pulse duration (sec) 10 1 10 2 10 3 10 -3 10 -2 10 -1 10 0 10 -4 fig9. transient thermal response curve t 1 t 2 p dm 1. duty cycle, d = 2. per unit base = r ja = 50 c/w t 1 t 2 0.02 0.1 0.2 duty cycle = 0.5 0.05 drain current i d (a) drain - source voltage v ds (v) fig8. safe operation area 10 1 10 1 10 2 10 3 10 -1 10 -2 10 -1 10 0 10 0 10 2 v gs = 10v single pulse 1ms 10ms 10s 100ms 1s dc single pluse 10 -2 10 -1 10 0 normalized transient thermal resistance operation in this area is limited by r ds(on) downloaded from: http:///
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