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absolute maximum ratings parameter units i d @ v gs = -12v, t c = 25c continuous drain current -20* i d @ v gs = -12v, t c = 100c continuous drain current -18 i dm pulsed drain current -80 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 166 mj i ar avalanche current -20 a e ar repetitive avalanche energy 7.5 mj dv/dt peak d iode recovery dv/dt -1.1 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10s) weight 4.3 ( typical ) g pre-irradiation international rectifiers r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dcconverters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. o c a radiation hardened IRHYB597Z30CM power mosfet thru-hole (low-ohmic to-257aa) www.irf.com 1 30v, p-channel technology product summary part number radiation level r ds(on) i d IRHYB597Z30CM 100k rads (si) 0.048 ? -20a* irhyb593z30cm 300k rads (si) 0.048 ? -20a* for footnotes refer to the last page low-ohmic to-257aa tabless features: low r ds(on) fast switching single event effect (see) hardened low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets electrically isolated light weight * current is limited by package pd - 95819 downloaded from: http:///
IRHYB597Z30CM pre-irradiation 2 www.irf.com for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) -20* i sm pulse source current (body diode) -80 v sd diode forward voltage -5.0 v t j = 25c, i s = -20a, v gs = 0v t rr reverse recovery time 75 ns t j = 25c, i f =-20a, di/dt -100a/ s q rr reverse recovery charge 125 nc v dd -25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier web site. * current is limited by package electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage -30 v v gs = 0v, i d = -1.0ma ? bv dss / ? t j temperature coefficient of breakdown -0.03 v/c reference to 25c, i d = -1.0ma voltage r ds(on) static drain-to-source on-state 0.048 ? v gs = -12v, i d = -18a resistance v gs(th) gate threshold voltage -2.0 -4.0 v v ds = v gs , i d = -1.0ma g fs forward transconductance 12 s ( ) v ds = -15v, i ds = -18a i dss zero gate voltage drain current -10 v ds = -24v ,v gs = 0v -25 v ds = -24v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward -100 v gs = -20v i gss gate-to-source leakage reverse 100 v gs = 20v q g total gate charge 45 v gs = -12v, i d = -20a q gs gate-to-source charge 20 nc v ds = -15v q gd gate-to-drain (miller) charge 13 t d (on) turn-on delay time 25 v dd = -15v, i d = -20a t r rise time 100 v gs = -12v, r g = 7.5 ? t d (off) turn-off delay time 50 t f fall time 70 l s + l d total inductance 6.8 measured from drain lead (6mm / 0.25in . from package) to source lead ( 6mm /0.25in. from package) c iss input capacitance 1690 v gs = 0v, v ds = - 25v c oss output capacitance 980 p f f = 1.0mhz c rss reverse transfer capacitance 130 r g internal gate resistance 6.6 ? f = 1.0mhz, open drain na ? nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case 1.67 r thja junction-to-ambient 80
c/w downloaded from: http:///
www.irf.com 3 pre-irradiation IRHYB597Z30CM table 1. electrical characteristics @ tj = 25c, post total dose irradiation parameter 100k rads(si) 1 300k rads(si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage -30 -30 v v gs = 0v, i d = -1.0ma v gs(th) gate threshold voltage -2.0 -4.0 -2.0 -5.0 v gs = v ds , i d = -1.0ma i gss gate-to-source leakage forward -100 -100 na v gs =-20v i gss gate-to-source leakage reverse 100 100 v gs = 20 v i dss zero gate voltage drain current -10 -10 a v ds = -24v, v gs =0v r ds(on) static drain-to-source 0.048 0.048 ? v gs = -12v, i d =-18a on-state resistance (to-3) r ds(on) static drain-to-source on-state 0.048 0.048 ? v gs = -12v, i d =-18a resistance(low-ohmicto-257aa) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and testconditions in order to provide a direct comparison. radiation characteristics 1. part number IRHYB597Z30CM2. part number irhyb593z30cm fig a. single event effect, safe operating area v sd diode forward voltage -5.0 -5.0 v v gs = 0v, i s = -18a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. for footnotes refer to the last page table 2. single event effect safe operating area ion let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs=0v @vgs=5v @vgs=10v @vgs=15v @vgs=20v br 37.5 278.5 36 - 30 - 30 - 30 - 30 - 30 i 59.7 320 31 - 30 - 30 - 30 - 30 - 25 au 81.4 332 27 - 30 - 30 - 30 - 25 -35 -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 vgs vds br i au downloaded from: http:///
IRHYB597Z30CM pre-irradiation 4 www.irf.com normalized on-resistance vs. temperature typical output characteristics typical output characteristics typical transfer characteristics 15 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 150c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 60 s pulse width tj = 25c vgs top -15v -12v -10v -9.0v -8.0v -7.0v -6.0v bottom -5.0v -5.0v -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -12v -20a 55 . 566 . 577 . 58 -v gs , gate-to-source voltage (v) 10 100 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) v ds = -20v 60 s pulse width t j = 150c t j = 25c downloaded from: http:///
www.irf.com 5 pre-irradiation IRHYB597Z30CM
maximum safe operating area typical gate charge vs. gate-to-source voltage typical capacitance vs. drain-to-source voltage typical source-drain diode forward voltage 1 10 100 0 600 1200 1800 2400 3000 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -20a v = -15v ds v = -24v ds 1 10 100 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 1 00 s 012345 -v sd , source-to-drain voltage (v) 1 10 100 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) v gs = 0v t j = 150c t j = 25c downloaded from: http:///
IRHYB597Z30CM pre-irradiation 6 www.irf.com fig 10b. switching time waveforms fig 11. maximum effective transient thermal impedance, junction-to-case maximum drain current vs. case temperature fig 10a. switching time test circuit
1 0.1 % + - v ds 90% 10% v gs t d(on) t r t d(off) t f 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 25 50 75 100 125 150 0 5 10 15 20 25 30 t , case temperature ( c) -i , drain current (a) c d limited by package downloaded from: http:///
www.irf.com 7 pre-irradiation IRHYB597Z30CM fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit q g q gs q gd v g charge d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v t p v ( br ) dss i as 25 50 75 100 125 150 0 100 200 300 400 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -9.0a -12.6a -20a downloaded from: http:///
IRHYB597Z30CM pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. -12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. - 24 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = -25v, starting t j = 25c, l=0.83mh peak i l =- 20a, v gs = -12v i sd - 20a, di/dt - 115a/ s, v dd - 30v, t j 150c footnotes: case outline and dimensions low-ohmic to-257aa ( tabless) ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 05/2004 0.88 [.035] 0.64 [.025] 123 ? 0.50 [.020] b a 3x ? 2.54 [.100] 10.66 [.420] 10.42 [.410] a 5.08 [.200] 4.83 [.190] b 10.92 [.430] 10.42 [.410] 15.88 [.625] 12.70 [.500] 2x 0.71 [.028] max. 0.13 [.005] 3.05 [.120] c not e s : 1. dimens ioning & t olerancing per ans i y14.5m-1994. 2. cont rolling dimens ion: inch. 3. di me ns ions ar e s h own i n mi l l i me t e r s [ inch e s ]. 4. t o-257aa t ab les s is a modif ied je dec out line t o-257aa. lead assignments 2 = source 1 = drain 3 = gate downloaded from: http:///

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