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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor 2N2222 description collector current- i c = 0.8a collector-emitter breakdown voltage- : v (br)ceo = 30v(min) complement to type 2n2907 applications designed for general-purpose switching and linear amplification. absolute maximum ratings(t a =25 ) thermal characteristics symbol parameter max unit r th j-a thermal resistance,junction to ambient 350 k/w symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 30 v v ebo emitter-base voltage 5 v i c collector current-continuous 0.8 a i bm base current-peak 0.2 a p c collector power dissipation@t c =25 0.5 w t j junction temperature 150 t stg storage temperature -65~150
inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor 2N2222 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br) ceo collector-emitter breakdown voltage i c =10ma ; i b =0 30 v v (br)ebo emitter-base breakdown voltage i e =10 a ; i c =0 5 v v ce (sat) -1 collector-emitter satu ration voltage i c = 150ma; i b = 15ma 0.4 v v ce (sat) -2 collector-emitter satu ration voltage i c = 500ma; i b = 50ma 1.6 v v be (sat) -1 base-emitter satura tion voltage i c = 150ma; i b = 15ma 1.3 v v be (sat) -2 base-emitter satura tion voltage i c = 500ma; i b = 50ma 2.6 v i cbo collector cutoff current v cb = 50v; i e =0 1.5 ua i ebo emitter cutoff current v eb = 5v; i c =0 50 na h fe-1 dc current gain i c = 0.1ma ; v ce = 10v 35 h fe-2 dc current gain i c = 1ma ; v ce = 10v 50 h fe-3 dc current gain i c = 10ma ; v ce = 10v 75 h fe-4 dc current gain i c = 150ma ; v ce = 10v 100 300 h fe-5 dc current gain i c = 500ma ; v ce = 10v 30 f t current gain-bandwidth product i c = 20ma ; v ce = 20v;f test = 100mhz 250 mhz c ob output capacitance i e = 0 ; v cb = 10v; f test = 1.0mhz 8 pf switching times t d delay time i c = 150ma; i b1 = -i b2 = 15ma 10 ns t r rise time 25 ns t stg storage time 200 ns t f fall time 60 ns |
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