transient volt age suppressor microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 1 copyright ? 2008 10-09-2008 rev b www. microsemi . com scottsdale division icte-5 thru icte-45c, e3 descri pt i on appearan ce the icte-5 through icte-45c series of transient voltage suppressors (tvss) are designed for the protection of integrated circuits that require very low clamping voltages (v c ) during a transient threat. due to their very fast response time, protection level and high peak pulse power (p pp ) capability, they are extremely effective in providing protection against line transients generated by: voltage reversals, capacitive or inductive load switching, electromechanical switching, electrostatic discharge and electromagnetic coupling. important: for the most current data, consult microsemis website: http://www.microsemi.com feat u res appli cat i on s / ben efi t s ? this series of tvs devices is designed to protect bipolar, mos and schottky improved integrated circuits. ? transient protection for cmos, mos, bipolar, ics (ttl, ecl, dtl, rtl and linear functions) ? 5.0 to 45 volts ? low clamping ratio ? rohs compliant devices available by adding e3 suffix ? these transient voltage suppressors are designed for the protection of integrated circuits. characterized by a very low clamping voltage together with a low standoff voltage, they afford a high degree of protection to: ttl, ecl, dtl, mos, cmos, vmos, hmos, nmos and static memory circuits. m ax i m u m rat i n gs m ech an i cal an d pack agi n g ? 1500 watts of peak pulse power (p pp ) dissipation at 25 o c and 10x1000 s ? t clamping (0 volts to v (br) min): <100 ps theoretical for unidirectional and <5 ns for bidirectional ? operating and storage temperatures: -65 o c to +150 o c. ? forward surge rating: 200 amps, 1/120 second at 25 o c. (applies to unidirectional or single direction only). ? steady state power dissipation: 5 watts. ? repetition rate (duty cycle): .05% ? clamping factor: 1.33 @ full rated power. 1.20 @ 50% rated power. ? clamping factor: the ratio of the actual v c (clamping voltage) to the actual v (br) (breakdown votlage) as measured on a specific device. ? case: void-free, transfer molded thermosetting epoxy body meeting ul94v-0 ? finish: tin-lead or rohs compliant matte- tin plating solderable per mil-std-750, method 2026 ? polarity: cathode connected to case and marked. bidirectional not marked. ? weight: 1.5 grams (approx.) ? mounting position: any ? see package dimension on last page icte-5 thru icte-45c, e3 downloaded from: http:///
transient volt age suppressor microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 2 copyright ? 2008 10-09-2008 rev b www. microsemi . com scottsdale division icte-5 thru icte-45c, e3 elect ri cal ch aract eri st i cs @ 2 5 o c (u n i di rect i on al) microsemi part number stand-off voltage (note 1) v wm volts maximum reverse leakage @v wm i d a minimum* breakdown voltage @ 1.0 ma v (br) volts maximum clamping voltage (fig. 2) i pp1 = 1a v c volts maximum clamping voltage (fig. 2) @ i pp2 = 10a v c volts maximum peak pulse current @ 10 x 1000 s i pp3 a icte-5 icte-8 icte-10 icte-12 icte-15 5.0 8.0 10.0 12.0 15.0 300 25 2 2 2 6.0 9.4 11.7 14.1 17.6 7.1 11.3 13.7 16.1 20.1 7.5 11.5 14.1 16.5 20.6 160 100 90 70 60 icte-18 icte-22 icte-36 icte-45 18.0 22.0 36.0 45.0 2 2 2 2 21.2 25.9 42.4 52.9 24.2 29.8 50.6 63.3 25.2 32.0 54.3 70.0 50 40 23 19 v f at 100 amps peak, 8.3 msec sine wave equals 3.5 volts maximum. elect ri cal ch aract eri st i cs @ 2 5 o c (t e st bot h pola rit ie s for bi di rect i on al) icte-5c icte-8c icte-10c icte-12c icte-15c 5.0 8.0 10.0 12.0 15.0 300 25 2 2 2 6.0 9.4 11.7 14.1 17.6 7.1 11.4 14.1 16.7 20.8 7.5 11.6 14.5 17.1 21.4 160 100 90 70 60 icte-18c icte-22c icte-36c icte-45c 18.0 22.0 36.0 45.0 2 2 2 2 21.2 25.9 42.4 52.9 24.8 30.8 50.6 63.3 25.5 32.0 54.3 70.0 50 40 23 19 c suffix indicates bidirectional note 1: tvss are normally selected according to the reverse stand off voltage (v wm ) which should be equal to or great er than the dc or continuous peak operating voltage level. * the minimum breakdown voltage as shown takes into consideration the + 1 volt tolerance normally specif ied for power supply regulation on most integrated circuit manufacturers data sheets. similar dev ices are available with reduced clamping voltages where tighter regulated power supply voltages are employed. ou t li n e an d ci rcu i t icte-5 thru icte-45c, e3 figure 1 peak pulse power vs. pulse time (t w ) in s downloaded from: http:///
transient volt age suppressor microsemi scottsdale division 8700 e. thomas rd. po box 1390, scottsdale, az 85252 usa, (480) 941-6300, fax: (480) 947-1503 page 3 copyright ? 2008 10-09-2008 rev b www. microsemi . com scottsdale division icte-5 thru icte-45c, e3 figure 2 figure 3 typical characteristic clamping voltage typical capacitance vs. breakdown voltage vs. peak pulse current (unidirectional types) figure 4 typical capacitance vs. breakdown voltage (bidirectional types) pack age di m en si on s dimensions in inches (mm) icte-5 thru icte-45c, e3 downloaded from: http:///
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