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with ultrafast soft recovery diode IRG7RC10FDpbf 1 www.irf.com 02/01/12 v ces = 600v i c = 9.0a, t c = 100c t sc > 3 s, t jmax = 150c v ce(on) typ. = 1.6v @ i c = 5a e g n-channel c
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absolute maximum ratings parameter units v ce s collector-to-emitter breakdown voltage v i c @ t c = 25c continuous collector current i c @ t c = 100c continuous collector current i cm pulsed collector current, v ge = 15v i lm clamped inductive load current, v ge = 20v a i f @t c =25c diode continuous forward current i f @t c =100c diode continuous forward current i fm diode maximum forward current v ge gate-to-emitter voltage v p d @ t c =25c maximum power dissipation w p d @ t c =100c maximum power dissipation t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter min. typ. max. units r ? jc junction-to-case - igbt 2 . 1 r ? jc junction-to-case - diode 6 . 1 r ? ja junction-to-ambient (pcb mount steady state) 5 0 max. -55 to + 150 30 6124 20 c 300 (0.063 in. (1.6mm) from case) c/w 600 16.5 9.0 2020 16.5 9.0 g c e gate collector emitter d-pak IRG7RC10FDpbf downloaded from: http:///
IRG7RC10FDpbf 2 www.irf.com notes: v cc = 80% (v ces ), v ge = 20v, l = 1.6mh, r g = 100 ?? pulse width limited by max. junction temperature. ?

pcb (fr-4 or g-10 material). for recommended footprint and soldering techniques refer to application note #an-994. !
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# electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage 600 v v ge = 0v , i c =250 a ? v (b r )ce s / ? t j temperature coeff. of breakdown voltage 0.55 v/c v ge = 0v , i c = 250 a ( 25 -150 o c ) v ce(on) collector-to-emitter saturation voltage 1.60 1.85 i c = 5.0a, v ge = 15v, t j = 25c 1 . 6 0 v i c = 5.0a, v ge = 15v, t j = 150c v ge (t h ) gate threshold voltage 4.5 7.0 v v ce = v ge , i c = 200 a ? v ge ( t h) / ? tj threshold voltage temp. coefficient -14 m v / c v ce = v ge , i c = 200 a ( 25 -150 o c ) gfe forward transconductance 3.9 s v ce = 50v , i c = 5.0a i ce s 2 0 a v ge = 0v ,v ce = 600v 100 v ge = 0v, v ce = 600v, t j =150c v fm 1 . 51 . 9 v i f = 5.0a 1 . 3 i f = 5.0a, t j = 150c i ge s gate-to-emitter leakage current 100 na v ge = 30 v switching characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units q g total gate charge (turn-on) 24 36 i c = 5.0a q ge gate-to-emitter charge (turn-on) 4.4 6.6 nc v cc = 400v q gc gate-to-collector charge (turn-on) 11 17 v ge = 15v e on turn-on switching loss 170 380 i c = 5.0a, v cc = 400v, v ge = 15v e off turn-off switching loss 150 365 jr g = 100 ? , l=1.6mh, t j = 25c e total total switching loss 320 745 e nergy los s es include tail and diode revers e recovery t d(on) turn-on delay time 38 55 i c = 5.0a, v cc = 400v t r rise time 32 49 ns r g = 100 ? , l=1.6mh t d(off) turn-off delay time 240 325 t j = 25c t f fall time 10 26 e on turn-on switching loss 250 i c = 5.0a, v cc = 400v, v ge = 15v e off turn-off switching loss 310 j r g = 100 ? , l=1.6mh, t j = 150c e total total switching loss 560 e nergy los s es include tail and diode revers e recovery t d(on) turn-on delay time 32 i c = 5.0a, v cc = 400v t r rise time 31 ns r g = 100 ? , l=1.6mh t d(off) turn-off delay time 275 t j = 150c t f fall time 305 c ies input capacitance 580 v ge = 0v c oes output capacitance 24 v cc = 30v c re s reverse transfer capacitance 14 f = 1mhz t j = 150c, i c = 20a rbsoa reverse bias safe operating area full square v cc = 480v, vp 600v r g = 100 ? , v ge = +20v to 0v v ge = 15v, v cc = 400v, vp 600v rg = 100 ? , r shunt = 50m ??? t c = 100c erec reverse recovery energy of the diode 44 jt j = 150 o c trr diode reverse recovery time 80 ns v cc = 400v, i f = 5.0a irr peak reverse recovery current 6.4 a v ge = 15v, rg = 100 ? , l=1.0mh s pf conditions diode forward voltage drop collector-to-emitter leakage current scsoa short circuit safe operating area 3 downloaded from: http:///
IRG7RC10FDpbf www.irf.com 3 fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) fig. 2 - maximum dc collector current vs. case temperature fig. 3 - power dissipation vs. case temperature fig. 5 - reverse bias soa t j = 150c, v ge = 20v fig. 4 - forward soa, t c = 25c, t j ? 150c, v ge = 15v 25 50 75 100 125 150 t c (c) 0 5 10 15 20 i c ( a ) 25 50 75 100 125 150 t c (c) 0 10 20 30 40 50 60 70 p t o t ( w ) 10 100 1000 v ce (v) 1 10 100 i c ( a ) 1 10 100 1000 v ce (v) 0.01 0.1 1 10 100 i c ( a ) 1msec 10 sec 100 sec tc = 25c tj = 150c single pulse dc 1 10 100 f , frequency ( khz ) 0 2 4 6 8 10 12 14 16 l o a d c u r r e n t ( a ) for both: duty cycle : 50% tj = 150c tcase = 100c gate drive as specified power dissipation = 25w i square wave: v cc diode as specified downloaded from: http:///
IRG7RC10FDpbf 4 www.irf.com fig. 6 - typ. igbt output characteristics t j = -40c; tp = 20 s fig. 7 - typ. igbt output characteristics t j = 25c; tp = 20 s 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 9.0v 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 9.0v fig. 10 - typical v ce vs. v ge t j = -40c fig. 8 - typ. igbt output characteristics t j = 150c; tp = 20 s fig. 11 - typical v ce vs. v ge t j = 25c fig. 9 - typ. diode forward characteristics tp = 20 s 0 2 4 6 8 10 v ce (v) 0 5 10 15 20 i c e ( a ) v ge = 18v v ge = 15v v ge = 12v v ge = 10v v ge = 9.0v 0.0 1.0 2.0 3.0 v f (v) 0 5 10 15 20 i f ( a ) -40c 25c 150c 5 1 01 52 0 v ge (v) 0 5 10 15 20 v c e ( v ) i ce = 2.5a i ce = 5.0a i ce = 10a 51 01 52 0 v ge (v) 0 5 10 15 20 v c e ( v ) i ce = 2.5a i ce = 5.0a i ce = 10a downloaded from: http:///
IRG7RC10FDpbf www.irf.com 5 fig. 13 - typ. transfer characteristics v ce = 50v; tp = 20 s fig. 12 - typical v ce vs. v ge t j = 150c 5 1 01 52 0 v ge (v) 0 5 10 15 20 v c e ( v ) i ce = 2.5a i ce = 5.0a i ce = 10a 456789101112 v ge, gate-to-emitter voltage (v) 0 5 10 15 20 i c , c o l l e c t o r - t o - e m i t t e r c u r r e n t ( a ) t j = 150c t j = 25c fig. 14 - typ. energy loss vs. i c t j = 150c; l = 1.6mh; v ce = 400v, r g = 100 ? ; v ge = 15v. fig. 16 - typ. energy loss vs. r g t j = 150c; l = 1.6mh; v ce = 400v, i ce = 5.0a; v ge = 15v fig. 15 - typ. switching time vs. i c t j = 150c; l=1.6mh; v ce = 400v r g = 100 ? ; v ge = 15v fig. 17 - typ. switching time vs. r g t j = 150c; l=1.6mh; v ce = 400v i ce = 5.0a; v ge = 15v 024681 0 i c (a) 0 100 200 300 400 500 600 e n e r g y ( j ) e off e on 0 2 4 6 8 10 i c (a) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 0 20 40 60 80 100 120 140 160 r g ( ? ) 1 10 100 1000 s w i c h i n g t i m e ( n s ) t r td off t f td on 20 40 60 80 100 120 140 160 r g ( ? ) 200 220 240 260 280 300 320 340 360 e n e r g y ( j ) e off e on downloaded from: http:///
IRG7RC10FDpbf 6 www.irf.com fig. 18 - typical diode i rr vs. i f t j = 150c fig. 19 - typical diode i rr vs. r g t j = 150c; i f = 5.0a 0 2 4 6 8 10 i f (a) 2 4 6 8 10 12 14 i r r ( a ) r g = 150 ? r g = 22 ? r g = 50 ? r g = 100 ? 20 40 60 80 100 120 140 160 r g ( ?? 4 6 8 10 12 i r r ( a ) fig. 21 - typical diode q rr v cc = 400v; v ge = 15v; t j = 150c fig. 20 - typical diode i rr vs. di f /dt v cc = 400v; v ge = 15v; i ce = 5.0a; t j = 150c fig. 23 - typ. v ge vs. short circuit time v cc =400v, t c =25c fig. 22 - typical diode e rr vs. i f t j = 150c 150 200 250 300 350 400 450 di f /dt (a/ s) 4 6 8 10 12 i r r ( a ) 100 150 200 250 300 350 400 450 di f /dt (a/ s) 200 300 400 500 600 700 q r r ( n c ) 22 ? 100 ? 50 ? 10a 5.0a 2.5a 150 ? 2 4 6 8 10 12 i f (a) 0 20 40 60 80 100 120 e n e r g y ( j ) r g = 150 ? r g = 100 ? r g = 50 ? r g = 22 ? 8 1 01 21 41 61 8 v ge (v) 4 6 8 10 12 14 16 t i m e ( s ) 10 20 30 40 50 60 70 c u r r e n t ( a ) t sc i sc downloaded from: http:///
IRG7RC10FDpbf www.irf.com 7 fig. 27 - maximum transient thermal impedance, junction-to-case (diode) fig 26 - maximum transient thermal impedance, junction-to-case (igbt) fig. 25 - typical gate charge vs. v ge i ce = 5.0a, l= 2.2mh fig. 24 - typ. capacitance vs. v ce v ge = 0v; f = 1mhz 0 100 200 300 400 500 v ce (v) 1 10 100 1000 c a p a c i t a n c e ( p f ) cies coes cres 0 5 10 15 20 25 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 16 v g e , g a t e - t o - e m i t t e r v o l t a g e ( v ) v ces = 400v v ces = 300v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ? ri ci= ? i ? ri ? ? c ? 4 ? 4 r 4 r 4 ri (c/w) ?? i (sec) 0.0958 0.0000270.7741 0.000090 0.7623 0.001361 0.4143 0.008579 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ? j ? j ? 1 ? 1 ? 2 ? 2 ? 3 ? 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i ? ri ci= ? i ? ri ? ? c ? 4 ? 4 r 4 r 4 ri (c/w) ?? i (sec) 0.1037 0.0000102.2452 0.000193 2.7306 0.001761 1.3465 0.013390 downloaded from: http:///
IRG7RC10FDpbf 8 www.irf.com fig.c.t.1 - gate charge circuit (turn-off) fig.c.t.2 - rbsoa circuit 0 1k vcc dut l l rg 80 v dut vcc + - fig.c.t.5 - resistive load circuit rg vcc dut r = vcc icm g force c sens e 100k dut 0.0075 f d1 22k e force c force e sense fig.c.t.6 - bvces filter circuit fig.c.t.3 - s.c. soa circuit dc 4x dut vcc scsoa fig.c.t.4 - switching loss circuit l rg vcc dut / driver diode clamp / dut -5v downloaded from: http:///
IRG7RC10FDpbf www.irf.com 9 fig. wf1 - typ. turn-off loss waveform @ t j = 150c using fig. ct.4 fig. wf2 - typ. turn-on loss waveform @ t j = 150c using fig. ct.4 wf.3- typ. diode recovery waveform @ t j = 150c using ct.4 wf.4- typ. short circuit waveform @ t j = 25c using ct.3 -20 0 20 40 60 80 100 -100 0 100 200 300 400 500 -1.0 0.0 1.0 2.0 3.0 4.0 ice (a) vce (v) time (s) vce ice -2 0 2 4 6 8 10 12 -100 0 100 200 300 400 500 600 -0.5 0 0.5 1 1.5 i ce (a) v ce (v) time(s) 90% i ce 5% v ce 5% i ce eoff loss tf -2 0 2 4 6 8 10 12 -100 0 100 200 300 400 500 600 -0.4 0.1 0.6 i ce (a) v ce (v) time (s) test current 90% test current 5% v ce 10% test current tr eon loss -8 -6 -4 -2 0 2 4 6 -0.3 -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 0.5 if (a) time (s) peak i rr t rr q rr downloaded from: http:///
IRG7RC10FDpbf 10 www.irf.com

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IRG7RC10FDpbf www.irf.com 11 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 02/2012

tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch data and specifications subject to change without notice. this product has been designed and qualified for industrial market. qualification standards can be found on irs web site. downloaded from: http:///

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