EC734606 complementary mosfet e-cmos corp. ( www.ecmos.com.tw ) page 1 of 5 4l04n-rev.f001 description the EC734606 uses advanced trench technology mosfet to provide excellent r ds(on) and low gate charge. the complementary mosfet may be used in power inverters , and other applications. features and benefits: ? n-channel vds = 30v,id = 6.9a rds(on) < 42m @ vgs=4.5v rds(on) < 28m @ vgs=10v p-channel vds = -30v,id = -6a rds(on) < 58m @ vgs=-4.5v rds(on) < 35m @ vgs=-10v ? high power and current handing capability ? lead free product is acquired ? surface mount package absolute maximum ratings (ta=25 unless otherwise noted) thermal resistance n-ch 62.5 thermal resistance,junction-to-ambient (note 2) r ja p-ch 62.5 /w parameter symbol n-channel p-channel unit drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 20 v i d (t a =25 ) 6.9 -6 a drain current-continuous i d (t a =70 ) 6.0 -5.0 a pulsed drain current (note 1) i dm 30 -30 a pd(t a =25 ) 2.0 2.0 w maximum power dissipation pd(t a =70 ) 1.44 1.44 operating junction and storage temperature range t j ,t stg -55 to 150 -55 to 150 ssf4606
EC734606 complementary mosfet e-cmos corp. ( www.ecmos.com.tw ) page 2 of 5 4l04n-rev.f001 electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics v gs =0v i d =250 a n-ch 30 drain-source breakdown voltage bv dss v gs =0v i d =-250 a p-ch -30 v v ds =24v,v gs =0v n-ch 1 zero gate voltage drain current i dss v ds =-24v,v gs =0v p-ch -1 a n-ch 100 gate-body leakage current i gss v gs =20v,v ds =0v p-ch 100 na on characteristics (note 3) v ds =v gs ,i d =250 a n-ch 1 1.9 3 gate threshold voltage v gs(th) v ds =v gs ,i d =-250 a p-ch -1.2 -2 -2.4 v v gs =10v, i d =-6.9a n-ch 22.5 28 v gs =-10v, i d =-6.0a p-ch 28 35 v gs =4.5v, i d =5a n-ch 34.5 42 drain-source on-state resistance r ds (on) v gs =-4.5v, i d =-5a p-ch 44 58 m v ds =5v,i d =6.9a n-ch 10 15.4 forward transconductance gfs v ds =-5v,i d =-6a p-ch 13 s dynamic characteristics (note4) n-ch 680 input capacitance c lss p-ch 900 n-ch 100 output capacitance c oss p-ch 200 n-ch 77 reverse transfer capacitance c rss n-ch v ds =15v,v gs =0v, f=1.0mhz p-ch v ds =-15v,v gs =0v, f=1.0mhz p-ch 120 pf switching characteristics (note 4) n-ch 4.6 turn-on delay time td(on) p-ch 7.7 n-ch 4.1 turn-on rise time tr p-ch 5.7 n-ch 20.6 turn-off delay time td(off) p-ch 20 n-ch 5.2 turn-off fall time tf n-ch v dd =15v,r l =2.2 v gen =10v, r gen =3 p-ch v dd =-15v,r l =2.7 v gen =-10v, r gen =3 p-ch 9.5 ns n-ch 7 total gate charge qg p-ch 9.6 n-ch 1.8 gate-source charge qgs p-ch 2.5 n-ch 3.2 gate-drain charge qgd n-ch v ds =15v,i d =6.9a, v gs =4.5v p-ch v dd =-15v,i d =-6a v gs =-4.5v p-ch 4.5 nc
EC734606 complementary mosfet e-cmos corp. ( www.ecmos.com.tw ) page 3 of 5 4l04n-rev.f001 drain-source diode characteristics v gs =0v,i s =1a n-ch 0.76 1 diode forward voltage (note 3) v sd v gs =0v,i s =-1a p-ch -0.77 -1 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production te sting. n-channel thermal characteristics p-channel thermal characteristics
EC734606 complementary mosfet e-cmos corp. ( www.ecmos.com.tw ) page 4 of 5 4l04n-rev.f001 ordering and marking information EC734606 xx x part number package marking EC734606m1r sop-8l ssf4606 m1 sop 8l r tape & reel
EC734606 complementary mosfet e-cmos corp. ( www.ecmos.com.tw ) page 5 of 5 4l04n-rev.f001 sop 8l package outline dimension
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