reflective sensor HOA1404 description features choice of phototransistor or photodarlington output focused for maximum response wide operating temperature range (-55?c?to?+100?c) the HOA1404 series consists of an infrared emitting diode and an npn silicon phototransistor (HOA1404-001,-002) or photodarlington (HOA1404-003), encased side-by-side on converging optical axes, in a black thermoplastic housing. the detector responds to radiation from the ired only when a reflective object passes within its field of view. the HOA1404 series employs metal can packaged components. for additional component information see se1450, sd1440, and sd1410. housing material is acetal copolymer. housings are soluble in chlorinated hydrocarbons and ketones. recommended cleaning agents are methanol and isopropanol. ~ ~ ~ ~ .479(12.16) s e emitter collector cathode anode .045(.108) r 2 plcs .170(4.32) .085(2.16) .20(5.08) test surface .076(1.93) .152(3.86) .245(6.22) .645(16.38) .650(16.51) min .213(5.41) .115(2.92) .375(9.52) ~ ~ ~ ~ dim_037.ds4 infra-61.tif outline dimensions in inches (mm) 3 plc decimals 0.010(0.25) tolerance 2 plc decimals 0.020(0.51) honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 248
reflective sensor HOA1404 electrical characteristics units test conditions min parameter symbol typ max ir emitter detector coupled characteristics absolute maximum ratings (25?c free-air temperature unless otherwise noted) operating temperature range -55?c to 100?c storage temperature range -55?c to 125?c soldering temperature (10 sec) 260?c ir emitter power dissipation 75 mw [] reverse voltage 3 v continuous forward current 50 ma detector trans. darlington collector-emitter voltage 30 v 15 v emitter-collector voltage 5 v 5 v power dissipation 75 mw [] 75 mw [] collector dc current 30 ma 30 ma schematic
reflective sensor HOA1404 ired forward bias characteristics gra_073.ds4 forward voltage - v f o r w a r d c u r r e n t - m a 0 10 20 30 40 50 60 70 80 90 100 0.8 1.0 1.2 1.4 1.6 1.8 2.0 pulsed condition t a = 80c t a = -40c t a = 25c fig. 1 non-saturated switching time vs load resistance gra_079.ds4 load resistance - ohms r e s p o n s e t i m e - s 1 10 100 1000 10 100 1000 10000 phototransistor photodarlington fig. 2 dark current vs temperature gra_303.cdr
reflective sensor HOA1404 honeywell reserves the right to make changes in order to improve design and supply the best products possible. h 251
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