MBS6-K - mbs10-k creat by art - ideal for automated placement - reliable low cost construction utilizing molded plastic technique - high surge current capability - halogen-free according to iec 61249-2-21 packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test symbol unit v rrm v v rms v v dc v i 2 ta 2 s c j pf t j c t stg c version: c1602 taiwan semiconductor 0.8a, 600v - 1000v glass passivated brid g e rectifiers features moisture sensitivity level: level 1, per j-std-020 maximum rms voltage - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec mechanical data case: molded plastic body molding compound: ul flammability classification rating 94v-0 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 35 a 600 polarity: polarity as marked on the body weight: 0.12 g (approximately) maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter maximum repetitive peak reverse voltage v maximum dc reverse current t j =25 c at rated dc blocking voltage t j =125 c i r 5 100 a maximum dc blocking voltage maximum average forward rectified current on glass-epoxy p.c.b. on aluminum substrate i f(av) 0.5 0.8 a rating for fusing (t<8.3ms) 5.08 typical junction capacitance per leg (note 2) 13 typical thermal resistance r jl r ja 20 85 maximum instantaneous forward voltage (note 1) i f = 0.4 a v f 1.0 c/w operating junction temperature range - 55 to +150 storage temperature range - 55 to +150 note 1: pulse test with pw=300 s,1% duty cycle note 2: measure at 1.0mhz and applied reverse voltage of 4.0 v mbs6- k mbs8- k mbs10- k 600 800 1000 marking code 800 1000 700 560 420 mbs mbs6 mbs8 mbs10
part no. note 1: "x" defines voltage from 600v (MBS6-K) to 1000v (mbs10-k) note 2: whole series with green compound part no. mbs10-k ratings and characteristics curves (t a =25c unless otherwise noted) version: c1602 3,000 / 13" paper reel packing code MBS6-K - mbs10-k taiwan semiconductor example example p/n packing code mbs10-k rc green compound description mbsx-k (note 1, 2) rc rc ordering information packing packing code suffix g packing code suffix package gmbs 0 0.2 0.4 0.6 0.8 1 0 20406080100120140160 average forward current (a) ambient temperature ( c) fig.1 maximum forward current derating curve aluminum substrate glass epoxy p.c.b. resistive or inductive load with heat sink 0 5 10 15 20 25 30 35 110100 peak forward surge current (a) number of cycles at 60 hz fig. 3 maximum non-repetitive forward surge current single half sine-wave f=60hz f=50hz 0.01 0.1 1 10 100 0 20406080100 instantaneous reverse current ( a) percent of rated peak reverse volyage(%) fig. 2 typical reverse characteristics t j =25 c t j =125 c 0.1 1 10 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 instantaneous forward current (a) forward voltage (v) fig. 4 typical forward characteristics
min max min max a 4.50 4.90 0.177 0.193 b 0.56 0.84 0.022 0.033 c 3.60 5.00 0.142 0.197 d - 6.90 - 0.272 e 2.20 2.60 0.087 0.102 f 2.30 2.70 0.091 0.106 g - 0.20 - 0.008 h - 2.90 - 0.114 i 0.95 1.53 0.037 0.060 j 0.70 1.10 0.028 0.043 k 0.15 0.35 0.006 0.014 l 1.10 2.12 0.043 0.083 symbol a b c d e f p/n = marking code yw = date code f = factory code version: c1602 MBS6-K - mbs10-k taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) mbs 1.3 6.3 marking diagram suggested pad layout unit (mm) 1.7 0.9 4.4 8.1 unit (inch) 0.067 0.035 0.173 0.319 0.051 0.248 0 5 10 15 20 25 30 0.1 1 10 100 capacitance (pf) a reverse voltage (v) fig. 5 typical junction capacitance f=1.0mhz vslg=50mvp-p
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