b-34 01/99 IF3601 n-channel silicon junction field-effect transistor low-noise, high gain amplifier absolute maximum ratings = t a at 25?c reverse gate source voltage & gate drain voltage C 20 v continuous forward gate current 10 ma continuous device power dissipation 300 mw power derating 2 mw/c storage temperature range C 65c to 200c toe39 package dimensions in inches (mm) pin configuration 1 source, 2 drain, 3 gate & case at 25c free air temperature: IF3601 process nj3600l static electrical characteristics min max unit test conditions gate source breakdown voltage v (br)gss C 20 v i g = C 1 a, v ds = ?v gate reverse current i gss C 0.1 na v gs = C 10 v, v ds = ?v gate source cutoff voltage v gs(off) C 0.35 C 2 v v ds = 10 v, i d = 0.5 na drain saturation current (pulsed) i dss 30 ma v ds = 10 v, v gs = ?v dynamic electrical characteristics typ common source g fs 750 ms v ds = 10 v, v gs = ?v f = 1 khz forward transconductance common source input capacitance c iss 300 pf v ds = ?v, v gs = C 4 v f = 1 mhz common source c rss 200 pf v ds = ?v, v gs = C 4 v f = 1 mhz reverse transfer capacitance equivalent short circuit e n 0.3 nv/ hz v dg = 3 v, i d = 5 ma f = 100 hz input noise voltage 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-34
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