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datashee t product structure : silicon monolithic integrated circuit this product has no designed protec tion against radioactive rays . 1/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.rev.003 tsz22111 14 001 www.rohm.com 2 cell / 3 cell narrow vdc charger with smbus interface BD99950MUV general description the BD99950MUV is a high-efficiency, synchronous narrow vdc system voltage regulator and battery charger controller. it has two charge pumps which separately drive n-channel mosfets for automatic system power source select ion. charge voltage, charge current, ac adapter current and minimum system voltage can be programmed through smbus. with a small inductor, pwm switching frequency can also be programmed by smbus up to 1.2mhz. features ? n-channel mosfets available for battery or adapter selection via internal charge pumps ? fast dpm transient response under turbo mode(<100 s) ? linear mode trickle charge via bgate charge pump ? low operating current bgate charge pump at 17a(typical) ? mlcc output capacitor ? high light load efficiency for energy star and erp lot6 ? fast load current transient response under no battery or dead battery conditions ? nmos-nmos synchronous step-down controller ? programmable 600khz-1.2mhz switching frequency ? programmable charge voltage (16mv resolution), charger current (64ma resolution), input current (64ma resolution), minimum system voltage (64mv resolution) ? 0.5% charge voltage accuracy ? 3% charge current accuracy ? 3% input current accuracy ? 0.5% minimum system voltage accuracy ? 2% 20x input current amplifier output accuracy ? integrated loop compensation ? battery learn function ? ac adapter operating range: 6.0v to 24.0v ? off-state battery discharge current at 15 a ? 20pin 3.5mm3.5mm qfn package applications ? ultrabook, notebook pc, ultra-mobile pc, tablet pc key specifications ? input voltage range: 6.0v to 24.0v ? output voltage range: 3.072v to 16.384v ? charge voltage accuracy: 0.5% ? switching frequency: 600khz to 1.2mhz ? battery standby current: 17 a (typ) ? operating temperature range: -10c to +85c structure silicon monolithic integrated circuit package w(typ) x d(typ) x h(max) vqfn20pv3535 3.50mm x 3.50mm x 1.00mm vqfn20pv3535 downloaded from: http:///
datasheet d a t a s h e e t 2/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV typical application circuit figure 1. typical application circuit pin configuration (top view) downloaded from: http:///
datasheet d a t a s h e e t 3/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV pin descriptions pin no. pin name function range i/o 1 acn input current sense resistor negative input. place a 0.1 f ceramic capacitor from a cn to gnd for common-mode filtering. 0v to adapter i 2 acp input current sense resistor positive input. place a 0.1 f ceramic capacitor from ac p to gnd for common-mode filtering. 0v to adapter i 3 acgate charge pump output to drive ada pter input n-channel mosfets. the acdrv voltage is 6v above vcc during ac adapter insertion. place a 5.1k ? resistor and a 0.01 f capacitor to ground as a low pass filter to limit inrush current. 0v to adapter + 6v o 4 battrm battery removal signal input when battery is removed, bgate charge pump turns off. a high level indicates that the battery was removed. 0v to 5v i 5 acok ac adapter voltage detection open drain output. the internal open drain nmos turns off when acdet pin voltage is between 2.4v and 3.15v. 0v to 30v o 6 acdet ac adapter voltage detection input. valid ac adapter input range is set using resistors forming a voltage divider which are connected between acdet & gnd and acdet & ac adapter. 0v to 5v i 7 iout buffered adapter or charge current output selectable with smbus command. the iout voltage is 20 times the voltage in the sense resistor. place a 0.1 f or less ceramic decoupling capacitor from iout pin to gnd. 0v to 5v o 8 sda smbus open-drain data i/o. connect to smbus data line from the host controller or smart battery connect a 10k ? pull-up resistor according to smbus specifications. 0v to 5v i/o 9 scl smbus open-drain clock input. connect to smbus clock line from the host controller or smart battery connect a 10k ? pull-up resistor according to smbus specifications. 0v to 5v i 10 batt battery voltage input. connect a 1k ? resistor to the source of the n-channel mosfet. 0v to battery i 11 bgate charge pump output to drive batt to srn n-channel mosfet. batdrv voltage must be 6v above batt to turn on n-channel mosfet. connect a 1k ? resistor to the gate of the n-channel mosfet. 0v to battery + 6v o 12 srn charge current sense resistor negative input. place a 0.1 f ceramic capacitor from s rn to gnd for common-mode filtering. 0v to battery i 13 srp charge current sense resistor positive input. place a 0.1 f ceramic capacitor from sr p to gnd for common-mode filtering. 0v to battery i 14 gnd ic ground. 0v i 15 ldrv low-side power mosfet driver output. connect this pin to the gate of the low-side n-channel mosfet. 0v to 6v o 16 regn linear regulator output. regn is the output of the 5.25v linear regulator supplied from vcc. connect a 1 f ceramic capacitor from regn to gnd. 0v to 5.5v o 17 boot high-side power mosfet driver power supply. connect a 0.1 f capacitor from boot to phase. 0v to adapter + 5v i 18 hdrv high-side power mosfet driver output. connect this pin to the gate of the high-side n-channel mosfet. -1v to adapter + 5v o 19 phase high-side power mosfet driver source. connect this pin to the source of the high-side n-channel mosfet. -1v to adapter i 20 vcc input supply, diode or from adapter. place a 10 ? resistor and 1 f capacitor to ground as a low pass filter to limit inrush current. 0v to adapter i pad pad connect to ground 0v - downloaded from: http:///
datasheet d a t a s h e e t 4/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV block diagram figure 2. block diagram _ _ a a a a a a aa _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ + + a _ _ a downloaded from: http:///
datasheet d a t a s h e e t 5/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV absolute maximum ratings ( over operating free-air temperat ure range (unless otherwise noted) ) parameter rating unit conditions vcc, batt, srn, srp -0.3 to 30.0 v acn, acp -0.3 to 40.0 v phase -2.0 to acn+0.3 v acgate, bgate, boot -0.3 to 35.0 v hdrv phase-0.3 to boot+0.3 v iout, ldrv -0.3 to regn+0.3 v battrm, acdet, sda, scl, regn,acok,phase-boot -0.3 to 6.0 v vcc-acgate,batt-bgate -0.3 to 7.0 v acp-acn, srp-srn -0.3 to 0.3 v power dissipation 1.64 w board dimension:114.3mm x 76.2mm x 1.6mmt surface copper area: 2.25mm 2 2nd and 3rd copper area: 5505mm 2 ta over 25 oc, subtracts 61.0mw/oc junction temperature range(tj) -20 to 125 oc storage temperature range (tstg) -55 to 150 oc caution : operating the ic over the absolute maximum ratings may damage th e ic. in addition, it is impossible to predict all destructiv e situations such as short-circuit modes, open circuit modes, etc. therefore, it is im portant to consider circuit protection measures, like adding a fuse, in case the ic is operated in a special mode exceeding the absolute maximum ratings recommended operating conditions ( over operating free-air temperat ure range (unless otherwise noted) ) parameter symbol min typ max unit adapter voltage adapter+ 6.0 18.0 24.0 v output voltage system 3.0 - 17.0 v battery voltage (with adapter mode) battery+ 0.0 - 17.0 v battery voltage (only battery mode) battery+ 5.4 - 17.0 v operating temperature range (ta) topr -10 - 85 oc (note 3) pd, aso should not be exceeded electrical characteristics ( vcc/acp/acn = 18.0v, batt/srp/srn = 7.4v, phase = 0.0v, gnd = 0v ta=25 oc (unless otherwise specified) ) parameter symbol min typ max unit conditions adapter standby current iadp - 1.0 1.5 ma acdet=0v battery standby current 1 (vacdet=0.0v) ibatt1 - 17.0 30.0 a bgate charge pump on battery standby current 2 (vacdet=0.0v, vbattrm=3.3v) ibatt2 - 15.0 25.0 a bgate charge pump off battery current (vvcc=18.0v) ibatt3 - - 240 a switching frequency 1 fosc1 510 600 690 khz charge option[10:9] = 00 switching frequency 2 fosc2 720 800 880 khz charge option[10:9] = 01 switching frequency 3 fosc3 850 1000 1150 khz charge option[10:9] = 10 switching frequency 4 fosc4 1020 1200 1380 khz charge option[10:9] = 11 regn output voltage vregn 4.9 5.2 5.5 v smbus operation frequency fsmb 10 - 400 khz charge voltage charge voltage accuracy1 (srn terminal voltage) vcv1 8.358 8.400 8.442 v charge voltage() = 0x20d0 charge voltage accuracy2 (srn terminal voltage) vcv2 12.516 12.592 12.667 v charge voltage() = 0x3130 downloaded from: http:///
datasheet d a t a s h e e t 6/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV electrical characteristics C continued parameter symbol min typ max unit conditions charge current charge current accuracy (10m ? current sense resistor) i chg1 3973 4096 4219 ma charge current() = 0x1000 i chg2 1946 2048 2150 ma charge current() = 0x0800 i chg3 921 1024 1126 ma charge current() = 0x0200 i chg4 172 256 340 ma charge current() = 0x0100 i chg5 - 192 - ma charge current() = 0x0140 i chg6 64 128 192 ma charge current() = 0x0080 trickle charge current (10m ? current sense resistor, batt < minimum system voltage) i chgtri - 256 - ma charge current() = 0x0800 trickle charge to fast charge detect threshold i chgth - -180 - ma below trickle charge current input current adapter current accuracy (20m ? current sense resistor) i adp1 3973 4096 4219 ma input current() = 0x1000 i adp2 1946 2048 2150 ma input current() = 0x0800 i adp3 870 1024 1178 ma input current() = 0x0400 i adp4 384 512 640 ma input current() = 0x0200 minimum system voltage minimum system voltage accuracy (srn terminal voltage) v minsys1 6.113 6.144 6.175 v minimum system voltage() =0x1800 iout amplifier iout terminal voltage accuracy g iout - 20.0 - v/v (v iout )/(v acp - v acn ) v iout1 802.8 819.2 835.6 mv (v acp - v acn )=40.96mv v iout2 174.1 204.8 235.5 mv (v acp - v acn )=10.24mv comparator acok comparator v acok 2.376 2.400 2.424 v acdet rising for 19v adapter acok comparator hysteresis v acok2 - 50 - mv acdet falling acovp comparator v acovp1 3.050 3.150 3.250 v acdet rising acovp comparator hysteresis v acovp2 - 75 - mv acdet falling vcc uvlo (l to h) v uvlo1 3.5 3.7 3.9 v vcc rising vcc uvlo hysteresis v uvlo2 - 300 - v vcc falling vcc to srn comparator v vccok1 - 200 - mv vcc rising above srn vcc to srn comparator hysteresis v vccok2 - 100 - mv vcc falling toward srn high side fet ocp v hocp 200 450 900 mv acp to phase low side fet ocp 1 v locp1 70 135 220 mv charge option[7] = 0 phase to gnd low side fet ocp 2 v locp2 140 230 340 mv charge option[7] = 1 phase to gnd srn ovp v ovp 300 600 900 mv above charge voltage power select n-channel fet gate driver vcc to acgate voltage v acgate 5.0 6 6.5 v v acgate C v vcc acgate discharge resistor r acgate - 2 5 k ? batt to bgate voltage v bgate 5.0 6 6.5 v v bgate C v batt bgate discharge resistor r bgate - 250 500 ? downloaded from: http:///
datasheet d a t a s h e e t 7/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV electrical characteristics C continued switching driver boot terminal current i boot - 50 - a hdrv pmos on resistance r hdrvp - 6.0 10.0 ? i d = -10ma hdrv nmos on resistance r hdrvn - 0.65 1.3 ? i d = 10ma ldrv pmos on resistance r ldrvp - 7.5 12.0 ? i d = -10ma ldrv nmos on resistance r ldrvn - 0.9 1.4 ? i d = 10ma dead time t dead - 30 - ns others battrm input h v inh 2.5 - 5.5 v battrm input l v inl 0.0 - 0.3 v battrm pull down resistor r pd - 500 - k ? acok leak current i acoklk -1.0 0.0 1.0 a downloaded from: http:///
datasheet d a t a s h e e t 8/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV typical performance curves (adapter = 19v, 2s2p li-battery, ta = +25c (unless otherwise specified.)) figure 3. adapter insert to acok figure 4. acok to charge start figure 6. sllm (variable frequency) mode light load switching waveform regn 5v/div adapter 10v/div acok 5v/div acdet 2v/div ch1:adapter input 10v/div ch2:acdet 2v/div ch3:acok 5v/div ch4:regn 5v/div 200msec/div ch1:adapter input 10v/div ch2:acdet 2v/div ch3:acok 5v/div ch4:regn 5v/div 2msec/div adapter 10v/div acok 5v/div acgate 10v/div charge current 2a/div figure 5. acok to trickle charge start ch1:adapter input 10v/div ch2:acgate 10v/div ch3:acok 5v/div ch4:charge current 0.5a/div 1msec/div ch1:phase 10v/div ch2:ldrv 5v/div ch3:hdrv 10v/div ch4:inductor current 2a/div 1 sec/div inductor current 2a/div ldrv 5v/div phase 10v/div hdrv 10v/div charge current 500ma/div acok 5v/div adapter 10v/div acgate 10v/div downloaded from: http:///
datasheet d a t a s h e e t 9/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV typical performance curves - continued figure 7. fixed frequency mode light load switching waveform figure 8. continuous conduction mode switching waveform figure 9. system current load transient ( in p ut dpm and batter y dischar g in g) figure 10. no-battery system current load transient (0a to 5a) hdrv 10v/div phase 10v/div ldrv 2v/div inductor current 2a/div ch1:phase 10v/div ch2:ldrv 5v/div ch3:hdrv 10v/div ch4:inductor current 2a/div 500nsec/div inductor current 2a/div ldrv 2v/div phase 10v/div hdrv 10v/div ch1:phase 10v/div ch2:ldrv 5v/div ch3:hdrv 10v/div ch4:inductor current 2a/div 500nsec/div adapter current 2a/div battery current 2a/div system current 5v/div battery voltage 5v/div ch1:battery voltage 5v/div ch2:system current 5a/div ch3:adapter current 2a/div ch4:battery current 2a/div 500 sec/div system voltage 0.5v/div(ac) system current 2a/div ? v = -900mv (dcm to ccm) ch2:system voltage(ac) 0.5v/div ch4:system load current 2a/div 50 sec/div downloaded from: http:///
datasheet d a t a s h e e t 10/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV typical performance curves - continued figure 11. no-battery system current load transient ( 2a to 5a ) figure 12. trickle charge mode s y stem current transient ( 0a to 5a ) figure 13. trickle charge mode s y stem current transient ( 2a to 5a ) figure 14. charge current setting change (2.560a to 3.072a) ? v = -100mv (ccm to ccm) ch2:system voltage(ac) 0.5v/div ch4:system load current 2a/div 50 sec/div system current 2a/div system voltage 0.5v/div(ac) system current 2a/div system voltage 0.5v/div(ac) ? v = -585mv ch2:system voltage(ac) 0.5v/div ch4:system load current 2a/div 100 sec/div ? v = -115mv ch2:system voltage(ac) 0.5v/div ch4:system load current 2a/div 100 sec/div system voltage 0.5v/div(ac) system current 2a/div charge current 1a/div sda 5v/div scl 5a/div ch2:sda 5v/div ch3:scl 5v/div ch4:charge current 1a/div 2msec/div downloaded from: http:///
datasheet d a t a s h e e t 11/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV typical performance curves - continued figure 15. charge current setting change (3.072a to 2.560a) figure 16. charge current setting change (1.024a to 3.072a) figure 17. charge current setting change (3.072a to 1.024a) figure 18. battery removed sda 5v/div scl 5a/div charge current 1a/div ch2:sda 5v/div ch3:scl 5v/div ch4:charge current 1a/div 2msec/div ch2:sda 5v/div ch3:scl 5v/div ch4:charge current 1a/div 2msec/div sda 5v/div scl 5a/div charge current 1a/div ch2:sda 5v/div ch3:scl 5v/div ch4:charge current 1a/div 2msec/div peak voltage = 9.14v ? v = 740mv ch2:system voltage 2v/div ch3:battery voltage 2v/div ch4:battery current 2a/div 20msec/div battery current 2a/div system voltage 2v/div battery voltage 2v/div sda 5v/div scl 5a/div charge current 1a/div downloaded from: http:///
datasheet d a t a s h e e t 12/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV typical performance curves - continued figure 19. battery insertion ( battrm=h to l or char g e o p tion [ 11 ] =1 to 0 ) figure 20. low battery insertion ( battrm =h to l or char g e o p tion [ 11 ] =1 to 0 ) figure 21. system current load transient (fully charged battery 0x14=0000) ch1:battrm 10v/div ch2:system voltage 2v/div ch3:battery voltage 2v/div ch4:battery current 2a/div ch1:battrm 10v/div ch2:system voltage 2v/div ch3:battery voltage 2v/div ch4:battery current 500ma/div adapter current 2a/div system voltage 2v/div battery current 2a/div system current 5a/div ch1:system voltage 2v/div ch2:system current 5a/div ch3:adapter current 2a/div ch4:battery current 2a/div battery current 500ma/div s y stem volta g e 2v/div battery voltage 2v/div battrm 10v/div battery current 2a/div s y stem volta g e 2v/div battery voltage 2v/div battrm 10v/div downloaded from: http:///
datasheet d a t a s h e e t 13/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV typical performance curves - continued figure 22. battery voltage vs. charge current figure 23. system current vs. adapter current / charge current fig.24 sllm mode output current vs. efficiency downloaded from: http:///
datasheet d a t a s h e e t 14/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV operating description smbus protocols write C word format 0x12h charge option 0x14h charge current 0x15h charge voltage 0x3eh minimum system voltage 0x3fh adapter current read C word format 0x12h charge option 0x14h charge current 0x15h charge voltage 0x3eh minimum system voltage 0x3fh adapter current 0xfeh manufacture id 0xffh device id smbus communication timing waveforms s slave address wa register address a low data byte a high data byte ap 7bits 1bit 1bit 8bits 1bit 8bits 1bit 8bits 1bit 0b 0001001 0 0 msb lsb 0 msb lsb 0 msb lsb 0 s slave address wa register address as slave address ra low data byte a high data byte np 7bits 1bit 1bit 8bits 1bit 7bits 1bit 1bit 8bits 1bit 8bits 1bit 0b 0001001 0 0 msb lsb 0 0b 0001001 1 0 msb lsb 0 msb lsb 1 sar pnw downloaded from: http:///
datasheet d a t a s h e e t 15/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV smbus timing specification parameter symbol min ty p max unit condition smbus frequency f smbus 10 - 400 khz sda/scl input low voltage v inl 0.0 - 0.8 v sda/scl input high voltage v inh 2.1 - 5.5 v sda hold time from scl t h(dat) 250 - - ns sda setup time from scl t su(dat) 300 - - ns start condition hold time from scl t h(sta) 4 - - s start condition setup time from scl t su(sta) 4.7 - - s stop condition setup time from scl t su(stop) 4 - - s bus free time t buf 4.7 - - s scl low timeout t to(scl) - 25 - ms watch dog timer t wdi 140 175 220 s slave device address of BD99950MUV table 1. slave address + r 0b00010011 (0x13)h slave address + w 0b0 0010010 (0x12)h battery charger command the BD99950MUV supports the following 7 registers: table 2. register address register name read/write description por state 0x12h charge option read or write charge option 0xf302h 0x14h charge current read or write 7-bit charge current setting 0x0000h 0x15h charge voltage read or write 11-bi t charge voltage setting 0x2000h(8.192v) 0x3eh minimum system voltage read or write 6-bi t minimum system voltage setting 0x1800h(6.144v) 0x3fh input current read or write 7-bi t input current setting 0x0800h(2.048a) 0xfeh manufacturer id read only manufacturer id 0x001fh 0xffh device id read only device id 0x0001h enable of charge the conditions which make smbus communication possible are as follows: regn voltage is above 4.0v. vcc voltage is above 5.0v. when all conditions are not satisfied, reset will occur and register settings will return to their por states. battery discharge assistant function when system power supply is more than ac adapter power when the system load requires power more than what the ac adapter can provide due to the turbo-boost function of the cpu while charging in cc or cv mode, power insufficiency can be compensated by a battery. also, charge current is set to 0ma when charging is co mplete and when it turns to battery discharge mode during which the external fet (q4) of battery side is off, the bgate terminal charge pump automatically activates and by turning on q4, high efficiency discharge is achieved. when charge option [11] is set to 1, the bgate terminal charge pump continuously stays off. acoc function when more than 333% of the set ac adapter current is detected, hdrv terminal becomes low and the high-side fet turns off. switching automatically starts when acoc condition is released. high-side fet ocp function when phase voltage drops 450mv from the acp voltage while hdrv voltage is high, over-current condition is detected and high-side fet turns off. upon destruction of the low-side fet, avoid using the protection circuit under normal operation. downloaded from: http:///
datasheet d a t a s h e e t 16/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV low-side fet ocp function when phase voltage exceeds 135mv more than the acp vo ltage while ldrv voltage is high, over-current condition is detected and low-side fet turns off. upon destruction of the high-side fet, avoid usin g the protection circuit under normal operation. battery over voltage protection(battovp) the system voltage rises when battery is suddenly disc onnected while charging in cc mode. the srn pins ovp function is built-in to avoid over-voltage to be supplied to the system. the chip will not allow the high-side and low-side mosfet to turn-on when the battery voltage at srn exc eeds 600mv more than the charge voltage set-point. if the chip detects srn terminal ovp, the high- side fet and low-side fet are turned off. upon release from the ovp condition, it automatically returns to its no rmal state and restarts switching. watchdog timer the BD99950MUV chip includes a watchdog timer to terminat e charging if it does not receive a write command to the charge voltage() or charge current() registers within 175s. if a watchdog timeout occurs, all register values are left as is, however, charging is suspended. charging also stops when scl voltage stays low for more than 25ms since this signifies that the power s upply may have turned off. to reset the watchdog timer and resume charging, the wr ite commands to the charge voltage() or charge current() registers must be resent. the watchdog timer can also be disabled, or set to 44s, 88s or 175s via smbus. learn mode the battery learn cycle can be activated via smbus comm and using the charge option() bit[6]. set the bit to 1 to enable the battery learn cycle and 0 to disable it. when the learn function is enabled while the ac adapter is connected, the system power source switches to battery. the learn function allows the battery to discharge in order to calibrate the battery gauge over a complete discharge/charge cycle. the controller aut omatically exits learn cycle when the battery voltage is below the set value of minimum system voltage(). the syst em then switches back to adapter input. acok and acovp function the BD99950MUV uses an acok comparator to determine the s ource of ac adapter voltag e. an external resistor voltage divider attenuates the ac adapt er voltage before it goes to acdet. the ac adapter detect threshold should typically be programmed to a value greater than the maximum battery voltage, but lower than the maximu m allowed ac adapter voltage. the open drain acok output requires an external pull-up resistor to system digital rail for a high level. it can be pulled to external rail under the following conditions: ? vcc voltage > 5.0v ? 2.4v < acdet voltage < 3.15v ? vcc voltage C srn voltage > 300mv after the first ic power on reset, the acok rising edge delay is always 1.3s. set the charge option() bit[15] to 0 to set the rise deglitch time to 150ms. when the acdet pin voltage is higher than 3.15v, it is considered as ac adapt er over voltage. acok will be pulled low, and charging will be disabled. the acgate charge pump will be turned off to disconnect the high voltage ac adapter during acovp. when acdet pin voltage falls below 3.15v and above 2.4v, it is considered as the adapter voltage returning back to its normal voltage. acok will be pulled high by an external pull up resistor. transition from trickle charge mode to fast charge mode transition from trickle charge to cc charge (fast charge mode) occurs by detecting the decrease in trickle charge current. when the trickle charge current drops to less than 100m a from its set value, it automatically switches to cc charge (fast charge). to enable the transition to fast c harge, the charge current must be set to more than 256ma. downloaded from: http:///
datasheet d a t a s h e e t 17/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV charge ocp when the charging current exceeds 100ma more than the set charge current, the dac and charger restart to protect the battery from over current. over charge voltage setting protection when a write to the charge voltage() register is detecte d during cv charging mode, charging resets to protect battery from over-current. setting charge options the charge options are set by writing a valid 16-bit number to the charge option register . each bit in the control register has a different function. table 3 describes the functi on of each bit. bits 2 and 4 are controlled internally and are read only. table 3. charge options register (0x12h) bit bit name description [15] acok deglitch time setting 0: acok rising edge deglitch time 150ms 1: acok rising edge deglitch time 1.3s [14:13] watchdog timer setting 00: disable watchdog timer 01: enabled, 44 sec 10: enabled, 88 sec 11: enable watchdog timer (175s) [12] sllm mode 0: fixed frequency switching 1: variable frequency switching(sllm mode) [11] bgate charge pump enable 0: bgate charge pump on 1: bgate charge pump off(from host when battery is removed) [10:9] switching frequency setting 00: 600khz 01: 800khz 10: 1mhz 11: 1.2mhz [8] high side fet ocp comparator threshold setting 0: function is disabled 1: 450mv [7] low side fet ocp comparator threshold setting 0: 135mv 1: 230mv [6] learn enable 0: disable learn cycle 1: enable learn cycle [5] iout selection 0: iout is the 20x adapter current amplifier output 1: iout is the 20x charge current amplifier output [4] acok indication (read only) adapter detection indicator 0: ac adapter is not present (acdet < 2.4v) 1: ac adapter is present (acdet > 2.4v) [3] charge over current protection 0: charge current dac reset and charger restart 1: charge current dac reset [2] trickle charge indication (read only) trickle charge indicator 0: charge in switching mode 1: in trickle charge mode(linear charge mode ) [1] acoc enable 0: acoc disable 1: 3.33x of adapter current setting [0] shut down 0: enable nvdc charger control 1: shut down downloaded from: http:///
datasheet d a t a s h e e t 18/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV setting the charge voltage the charge voltage is set by writing a valid 16-bit number to the charge voltage register. the first 4 lsbs are ignored and the next 11 bits are used to set the charge voltage through a dac. the charge voltage range of the BD99950MUV is 3.072v to 16.384v. the register address for charge voltage is 0x15. the 16-bit binary number formed by d15-d0 represents the charge voltage set point in mv. however, the resolution becomes 16mv because the d0-d3 bits are ignored. the d15 bit is also ignored because it is not needed to span the 3.072v to 16.384v range. table 4. charge voltage register (0x15h) bit bit name description 0 - not used 1 - not used 2 - not used 3 - not used 4 charge voltage, dacv 0 0 = adds 0mv of charger voltage, 1024mv min 1 = adds 16mv of charger voltage 5 charge voltage, dacv 1 0 = adds 0mv of charger voltage, 1024mv min 1 = adds 32mv of charger voltage 6 charge voltage, dacv 2 0 = adds 0mv of charger voltage, 1024mv min 1 = adds 64mv of charger voltage 7 charge voltage, dacv 3 0 = adds 0mv of charger voltage, 1024mv min 1 = adds 128mv of charger voltage 8 charge voltage, dacv 4 0 = adds 0mv of charger voltage, 1024mv min 1 = adds 256mv of charger voltage 9 charge voltage, dacv 5 0 = adds 0mv of charger voltage, 1024mv min 1 = adds 512mv of charger voltage 10 charge voltage, dacv 6 0 = adds 0ma of charger voltage 1 = adds 1024mv of charger voltage 11 charge voltage, dacv 7 0 = adds 0mv of charger voltage 1 = adds 2048mv of charger voltage 12 charge voltage, dacv 8 0 = adds 0mv of charger voltage 1 = adds 4096mv of charger voltage 13 charge voltage, dacv 9 0 = adds 0mv of charger voltage 1 = adds 8192mv of charger voltage 14 charge voltage, dacv 10 0 = adds 0mv of charger voltage 1 = adds 16384mv of charger voltage, 16384mv max 15 - not used. downloaded from: http:///
datasheet d a t a s h e e t 19/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV setting the charge current the charge current is set by writing a valid 16-bit numbe r to the charge current register. the first 6 lsbs are ignored and the next 7 bits are used to set the charge cu rrent through a dac. the charge current range of the BD99950MUV is 128ma to 8.128a. the register address for c harge current is 0x14. the 16-bit binary number formed by d15-d0 represents the charge current set point in ma . however, the resolution becomes 64ma because the d0-d5 bits are ignored. the d13-d15 bits are also ignored becaus e they are not needed to span the 128ma to 8.128a range. to change trickle charge to fast charge, a setting of 256ma or higher is required. table 5. charge current register (0x14h), using 10m ? sense resistor bit bit name description 0 - not used 1 - not used 2 - not used 3 - not used 4 - not used 5 - not used 6 charge current, daci 0 0 = adds 0ma of charger current 1 = adds 64ma of charger current 7 charge current, daci 1 0 = adds 0ma of charger current 1 = adds 128ma of charger current 8 charge current, daci 2 0 = adds 0ma of charger current 1 = adds 256ma of charger current 9 charge current, daci 3 0 = adds 0ma of charger current 1 = adds 512ma of charger current 10 charge current, daci 4 0 = adds 0ma of charger current 1 = adds 1024ma of charger current 11 charge current, daci 5 0 = adds 0ma of charger current 1 = adds 2048ma of charger current 12 charge current, daci 6 0 = adds 0ma of charger current 1 = adds 4096ma of charger current, 8128ma max 13 - not used 14 - not used 15 - not used downloaded from: http:///
datasheet d a t a s h e e t 20/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV setting the input current the input current is set by writing a valid 16-bit number to the input current register. the first 7 lsbs are ignored and the next 7 bits are used to set the input current through a dac. the input current range of the BD99950MUV is 512ma to 6.144a. the register address for input current is 0x3f. the 16-bit binary number formed by d15-d0 represents the input current set point in ma. however, the resolution becomes 64ma because the d0-d5 bits are ignored. the d13-d15 bits are also ignored because they are not needed to span the 512ma to 6.144a range. to set for more than 6.144a the sense resistor must be changed to 10m ? . table 6. input current re gister (0x3fh), using 20m ? sense resistor bit bit name description 0 - not used 1 - not used 2 - not used 3 - not used 4 - not used 5 - not used 6 charge current, dacs 0 0 = adds 0ma of input current 1 = adds 64ma of input current 7 charge current, dacs 1 0 = adds 0ma of input r current 1 = adds 128ma of input current 8 charge current, dacs 2 0 = adds 0ma of input current 1 = adds 256ma of input current 9 charge current, dacs 3 0 = adds 0ma of input current 1 = adds 512ma of input current 10 charge current, dacs 4 0 = adds 0ma of input current 1 = adds 1024ma of input current 11 charge current, dacs 5 0 = adds 0ma of input current 1 = adds 2048ma of input current 12 charge current, dacs 6 0 = adds 0ma of input current 1 = adds 4096ma of input current, 6144ma max 13 - not used 14 - not used 15 - not used downloaded from: http:///
datasheet d a t a s h e e t 21/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV setting the minimum system voltage the minimum system voltage is set by writing a valid 16 -bit number to the minimum system voltage register. the first 6 lsbs are ignored and the next 8 bits are used to set the minimum system voltage through a dac. the minimum system voltage range of the BD99950MUV is 3.072v to 10.24v. the register address for minimum system voltage is 0x3e. the 16-bit binary number formed by d15-d0 represent s the minimum system voltage set point in mv. however, the resolution becomes 64mv because the d0-d5 bits are igno red. the d14-d15 bits are also ignored because they are not needed to span the 3.072v to 10.24v range. table 7. minimum system voltage register (0x3eh) bit bit name description 0 - not used 1 - not used 2 - not used 3 - not used 4 - not used 5 - not used 6 charge current, dacv 0 0 = adds 0mv of minimum system voltage, 1024mv min 1 = adds 64mv of minimum system voltage 7 charge current, dacv 1 0 = adds 0mv of minimum system voltage, 1024mv min 1 = adds 128mv of minimum system voltage 8 charge current, dacv 2 0 = adds 0mv of minimum system voltage, 1024mv min 1 = adds 256mv of minimum system voltage 9 charge current, dacv 3 0 = adds 0mv of minimum system voltage, 1024mv min 1 = adds 512mv of minimum system voltage 10 charge current, dacv 4 0 = adds 0ma of minimum system voltage 1 = adds 1024mv of minimum system voltage 11 charge current, dacv 5 0 = adds 0mv of minimum system voltage 1 = adds 2048mv of minimum system voltage 12 charge current, dacv 6 0 = adds 0mv of minimum system voltage 1 = adds 4096mv of minimum system voltage 13 charge current, dacv 7 0 = adds 0mv of minimum system voltage 1 = adds 8192mv of minimum system voltage, 10240mv max 14 - not used 15 - not used downloaded from: http:///
datasheet d a t a s h e e t 22/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV external components selection inductor and output capacitor low esr mlcc needs to be used to reduce ripple voltage. the inductance also has a great influence on ripple current which flows in the inductor. ripple current that fl ows in inductor can be calculated using formula (1). as shown in formula (1), the bigger the coil is or the hi gher the switching frequency is, less ripple current flows. ( 1 ) ripple current must be 30-50% of the maximum output current. frequency) switching :f current ripple output ( [h] [a] : l i f vcc l i vout vout \ vc c l outma x i 0. 5 \ 0. 3 l i peak current must be set lower than the maximum current of the inductor. (refer to inductor specification) in order to improve efficiency, lower dcr/acr inductor is recommended. the increase of output ripple voltage may lo wer the charge current detection accuracy. 19v adapter 2cell battery (fsw = 800khz) adapter capability 10w 20w 30w 40w max output current 1. 7a 3.4a 5.1a 6.8a inductor( h) 4.7 3.3 3.3 or 2.2 2.2 output capacitor( f) 22 33 44 44 sense resistor(m ? ) 10 10 10 10 acdet resistor an attenuated value of the ac adapter voltage is inputted to the acdet pin using a voltage divider. set the acdet voltage so that the range is 2.4v to 3. 15v when the ac adapter is inputted. to lower the response speed of uvp and ovp due to noise in the ac adapter, insert capacitor c16 parallel to resistor r7 for filtering. example of setting ac adapter voltage 10.5v 12v 15v 16v 19v 20v 24v battery 2cell 2cell 2cell/3cell 2cell/3c ell 2cell/3cell 2cell/3cell 2cell/3cell r6( ? ) 150k 180k 180k 200k 240k 240k 270k r7( ? ) 51k 51k 39k 39k 39k 36k 33k acok voltage rising edge (typical) 9.5v 10.9v 13.5v 14.7v 17.2v 18.4v 22.0v acovp voltage rising edge (typical) 12.4v 14.3v 17.7v 19.3v 22.5v 24.2v 29.0v reverse input protection circuit a protection circuit can be inserted (refer to figure 26) in case the polarity of the ac adapter or the battery is reversed. switching power mosfet (q1,q2) to decrease switching loss and to improve efficiency, select a fet with a small on-resistance and less gate capacity. ac adapter and battery pass power mosfet (q3,q4) to decrease loss during operation, choose a fet with a small on-resistance. [a] f vc c l vou t vout \ vc c l i downloaded from: http:///
datasheet d a t a s h e e t 23/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV vcc protection filter when inserting the ac adapter insert filter with 10 ? /1 f to prevent over-voltage caused by ringing w hen the ac adapter is inserted. acp and acn terminal are measured by increasing pressure of internal elements. acn and acp differential mode noise filtering when error is caused on the regulating current due to differential mode noise, insert a differential mode noise filter with 10 ? /1 f between the acn and acp pins. in this case, do not connect a capacitor between acn and gnd. srp, and srn capacitor to prevent inaccuracies in current detecti on caused by common node noise, place a 0.1 f- 1 f capacitor as close as possible to the analog gnd pin. current sensing resistor during adapter hot plug-in, the parasitic inductance and the input capacitor from the adapter cable form a second order system. thus adapter hot plug-in generate over vo ltage spike. the voltage spike may be beyond ic maximum voltage and break the ic. as methods of solving for voltage spike, moving c1 capacitor between r1 and q3. pcb layout guideline current sensing resistor the srp/acp and srn/acn connection mu st be laid out as shown in figure 25. also, connect a 0.1 f capacitor to gnd near the pin to decrease common mode noise. ldrv the ldrv pin is the gate drive termina l of the low-side n-channel mosfet. extremely high charging/discharging slew rate in the gate of the mosfet can cause a very large current to flow through the regn, ldrv and gnd terminals. it is therefore advisable to place the gate of the low-side n-channel mosfet to the ldrv pin as close as possible. enclosing the path with a ground shield is also recommended to lessen the unwanted effects of noise. hdrv and phase the hdrv pin is the gate drive terminal of the high-side n-channel mosfet. extremely high charging/discharging slew rate in the gate of the mosfet can cause a very large current to flow through the boot, hdrv and phase terminals. it is therefore advisable to place the gate of the high-side n-channel mosfet to the hdrv pin as close as possible. enclosing the path with a ground shield is al so recommended to lessen the unwanted effects of noise. figure 25. current sense kelvin layout adapter voltage when place input capacitor directry ada p ter node and hot plu g -in adapter voltage adapter voltage when place c1 capacitor acp node and hot plug-in adapter voltage downloaded from: http:///
datasheet d a t a s h e e t 24/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV application example figure 26. reference design schematic downloaded from: http:///
datasheet d a t a s h e e t 25/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV input capacitor c1 (22 f) place input capacitor c1, as close as possible to q3 source pin and ground. input capacitor c4 (10 f) place input capacitor c4, as close as possible to q1 drain pin and q2 source pin. select c1 R c4 for fast dpm operation. current sense resistor r1 (20m ? ), r2 (10m ? ) current sense kelvin layout must be followed. (r efer to current sense resistance on page 23.) current sense pin capacitor c8, c9, c10, c11 (1 f) and r11 place input capacitor c8, c9, c10, c11 as close as possible to their corresponding sense pins. (refer to acn and acp terminal different ial mode noise filtering on page 23.) regn output capacitor c7 (1 f) place output capacitor c7 as close as possible to regn pin and to ground. vcc decoupling capacitor c6 (1 f) place input decoupling capacitor c6 as close as possible to vcc pin and to ground. downloaded from: http:///
datasheet d a t a s h e e t 26/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV selection of components externally connected reference design value configuration qty rated voltage manufacture part number x[mm] y[mm] z[mm] q1,q2 2in1 3.0 3.0 0.8 1 30v rohm hs8k1 - 2.0 2.0 0.8 2 rohm rf4e110gn 3.3 3.3 0.8 r ohm rq3e120gn q3 - 2.0 2.0 0.8 1 30v rohm rf4e080gn 3.3 3.3 0.8 r ohm rq3e080gn q4 - 2.0 2.0 0.8 1 30v rohm rf4e110gn 3.3 3.3 0.8 r ohm rq3e120gn q5a,q5b (optional) 2in1 1.6 1.6 0.5 1 30v rohm em6k31 l 2.2uh 6.5 7.4 3.0 1 - alps glmc2r201a 6.6 7.0 3.0 toko fdsd0630-h-2r2m 7.5 7.5 2.0 coilcraft xal7020-222me 1.5uh 4.0 4.0 1.8 coilcraft ka5013-ae c1 22uf 2.0 1.25 1.25 1 25v murata grm21br61e226me44# c2a,c2b 22uf 2.0 1.25 1.25 2 25v murata grm21br61e226me44# c3 10uf 2.0 1.25 1.25 1 25v murata grm219br61e106ka12# c4 10uf 2.0 1.25 1.25 1 25v murata grm219br61e106ka12# c5 0.1uf 1.0 0.5 0.5 1 16v std. ceramic capacitor x5r 10% c6 1.0uf 1.0 0.5 0.5 1 25v murata grm155r61e105ka12 c7 1.0uf 1.0 0.5 0.5 1 16v std. ceramic capacitor x5r 10% c8 0.1uf 1.0 0.5 0.5 2 25v std. ceramic capacitor x5r 10% c9(empty) c10,c11 0.1uf 1.0 0.5 0.5 2 25v std. ceramic capacitor x5r 10% c12(empty) c13 4700pf 1.0 0.5 0.5 1 16v std. ceramic capacitor x5r 10% c14(empty) c15 0.1uf 1.0 0.5 0.5 1 16v std. ceramic capacitor x5r 10% c16(optional) 1000pf 1.0 0.5 0.5 1 16v std. ceramic capacitor x5r 10% c17 1.0uf 1.0 0.5 0.5 1 16v std. ceramic capacitor x5r 10% c18 0.01uf 1.0 0.5 0.5 1 16v std. ceramic capacitor x5r 10% d1 - 1.0 0.6 0.4 1 30v rohm rb520cs-30 r1 20m ? 2.0 1.2 0.3 1 - rohm ucr10evhfsr020 r2 10m ? 2.0 1.2 0.3 1 - rohm pmr10ezpfu10l0 r3(optional) 5.1k ? 1.0 0.5 0.35 1 - std. 1% r4,r8 (optional) 510 ? 1.0 0.5 0.35 2 - std. 1% r5 10 ? 1.0 0.5 0.35 1 - std. 1% r6 240k ? 1.0 0.5 0.35 1 - std. 1% r7 39k ? 1.0 0.5 0.35 1 - std. 1% r9(optional) 1m ? 1.0 0.5 0.35 1 - std. 1% r10(optional) 3m ? 1.0 0.5 0.35 1 - std. 1% r11 10 ? 1.0 0.5 0.35 1 - std. 1% downloaded from: http:///
datasheet d a t a s h e e t 27/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV figure 27. top silkscreen figure 28. top copper trace layer (signal and ground) figure 29. middle 1 copper trace layer (ground) figure 30. middle 2 copper trace layer (signal and system output) figure 31. bottom copper trace layer (signal and ground) figure 32. bottom silkscreen downloaded from: http:///
datasheet d a t a s h e e t 28/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV example of recommended circuit figure 33. example of application circuit (ac adapter and battery reverse input protected configuration) figure 34. example of application circu it (minimum component configuration) downloaded from: http:///
datasheet d a t a s h e e t 29/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV power dissipation figure 35. power dissipation (solder operated on the pad backside of 4 layer substrate) downloaded from: http:///
datasheet d a t a s h e e t 30/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV operational notes 1. reverse connection of power supply connecting the power supply in reverse polarity can damage the ic. take precautions against reverse polarity when connecting the power supply, such as mounting an external diode between the power supply and the ics power supply pins. 2. power supply lines design the pcb layout pattern to provide low impedance supply lines. separate the ground and supply lines of the digital and analog blocks to prevent noise in the ground and supply lines of the digital bloc k from affecting the analog block. furthermore, connect a capacitor to ground at all po wer supply pins. consider the effect of temperature and aging on the capacitance value when using electrolytic capacitors. 3. ground voltage ensure that no pins are at a voltage bel ow that of the ground pin at any time, even during transient condition. however, pins that drive inductive loads (e.g. motor driver outputs, dc-dc converter out puts) may inevitably go below ground due to back emf or electromotive force. in such cases, t he user should make sure that such voltages going below ground will not cause the ic and the system to malfunction by examining carefully all relevant factors and conditions such as motor characteristics, supply voltage, operating frequency and pcb wiring to name a few. 4. ground wiring pattern when using both small-signal and large-current ground traces, the two ground traces should be routed separately but connected to a single ground at the refe rence point of the application board to avoid fluctuations in the small-signal ground caused by large currents. also ensure that the ground trac es of external components do not cause variations on the ground voltage. the ground lines must be as short and thick as possible to reduce line impedance. 5. thermal consideration should by any chance the power dissipation rating be exceed ed the rise in temperature of the chip may result in deterioration of the properties of the ch ip. the absolute maximum rating of the pd stated in this specification is when the ic is mounted on a 70mm x 70mm x 1.6mm glass epoxy b oard. in case of exceeding this absolute maximum rating, increase the board size and copper area to prevent exceeding the pd rating. 6. recommended operating conditions these conditions represent a range within which the expect ed characteristics of the ic can be approximately obtained. the electrical characteristics are guaranteed under the conditions of each parameter. 7. inrush current when power is first supplied to the ic, it is possible that the internal logic may be unstable and inrush current may flow instantaneously due to the internal powering sequence and delays, especially if the ic has more than one power supply. therefore, give s pecial consideration to power coupling capacitance, power wiring, width of ground wiri ng, and routing of connections. 8. operation under strong electromagnetic field operating the ic in the presence of a strong electromagnetic field may cause the ic to malfunction. 9. testing on application boards when testing the ic on an application board, connecting a capacitor directly to a low-impedance output pin may subject the ic to stress. always dischar ge capacitors completely after each process or step. the ics power supply should always be turned off completely before connecting or removing it from the test setup during the inspection process. to prevent damage from static discharge, ground the ic during assemb ly and use similar precautions during transport and storage. 10. inter-pin short and mounting errors ensure that the direction and position are correct when mounting the ic on the pc b. incorrect mounting may result in damaging the ic. avoid nearby pins being shorted to each other especially to ground, power supply and output pin. inter-pin shorts could be due to many reasons such as me tal particles, water droplets (in very humid environment) and unintentional solder bridge deposited in between pins during assembly to name a few. downloaded from: http:///
datasheet d a t a s h e e t 31/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV operational notes C continued 11. unused input pins input pins of an ic are of ten connected to the gate of a mos transistor. the gate has extremely high impedance and extremely low capacitance. if left unc onnected, the electric field from th e outside can easily charge it. the small charge acquired in this way is enough to produce a signifi cant effect on the conduction through the transistor and cause unexpected operation of the ic. so unless otherwise specified, unused input pins should be connected to the power supply or ground line. 12. regarding the input pin of the ic this monolithic ic contains p+ isolat ion and p substrate layers between adjac ent elements in order to keep them isolated. p-n junctions are formed at the intersection of t he p layers with the n layers of other elements, creating a parasitic diode or transistor. for example (refer to figure below): when gnd > pin a and gnd > pin b, the p-n junction operates as a parasitic diode. when gnd > pin b, the p-n junction operates as a parasitic transistor. parasitic diodes inevitably occur in the structure of the ic. the operation of parasitic diodes can result in mutual interference among circuits, operational faults, or physical dam age. therefore, conditions that cause these diodes to operate, such as applying a voltage lower than the gnd voltage to an input pin (a nd thus to the p substrate) should be avoided. figure 36. example of monolithic ic structure 13. ceramic capacitor when using a ceramic capacitor, determine the dielectric constant considering the change of capacitance with temperature and the decrease in nominal capacitance due to dc bias and others. 14. area of safe operation (aso) operate the ic such that th e output voltage, output current, and power di ssipation are all within the area of safe operation (aso). 15. thermal shutdown circuit(tsd) this ic has a built-in thermal shutdown circuit that pr events heat damage to the ic. normal operation should always be within the ics power dissipation rating. if however th e rating is exceeded for a continued period, the junction temperature (tj) will rise which will activate the tsd circui t that will turn off all output pins. when the tj falls below the tsd threshold, the circuits are autom atically restored to normal operation. note that the tsd circuit operates in a situation that exceeds the absolute maximum ratings and therefore, under no circumstances, should the tsd circuit be used in a set desi gn or for any purpose other t han protecting the ic from heat damage. 16. over current protection circuit (ocp) this ic incorporates an integrated over current protection circuit that is acti vated when the load is shorted. this protection circuit is effective in pr eventing damage due to sudden and unexpecte d incidents. however, the ic should not be used in applications characterized by continuous operation or transitioning of the protection circuit. ultrabook is trademarks of intel corporat ion in the u.s. and/or other countries. downloaded from: http:///
datasheet d a t a s h e e t 32/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV ordering information b d 9 9 9 5 0 m u v - e 2 part number package muv: vqfn20pv3535 packaging and forming specification e2: embossed tape and reel marking diagrams part number marking package orderable part number bd99950 vqfn20pv3535 BD99950MUV-e2 vqfn20pv3535 (top view) 12345 part number marking lot number 1pin mark downloaded from: http:///
datasheet d a t a s h e e t 33/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV physical dimension, tape and reel information package name vqfn20pv3535 ? order quantity needs to be multiple of the minimum quantity. embossed carrier tape tapequantity direction of feed the direction is the 1pin of product is at the upper left when you hold reel on the left hand and you pull out the tape on the right hand 2500pcs e2 () direction of feed reel 1pin downloaded from: http:///
datasheet d a t a s h e e t 34/34 tsz02201-0j1j0a700570-1-2 ? 2015 rohm co., ltd. all rights reserved. 29.jun.2015.re v .003 www.rohm.com tsz22111 15 001 BD99950MUV revision history date revision changes 29.aug.2013 001 new release 06.jan.2014 002 page.1 charge current accuracy -> charge voltage accuracy. page.2 figure.1 change typical application circuit. page.8 figure.4 time division 200ms->2ms change. page.23 add sentence about current sensing resistor. page.24 figure.26 change example of recommended circuit. 29.jun.2015 003 page.1 modify switching frequency range from 800khz to 1200khz to 600khz to 1200khz. downloaded from: http:///
datasheet d a t a s h e e t notice-pga-e rev.001 ? 2015 rohm co., ltd. all rights reserved. notice precaution on using rohm products 1. our products are designed and manufac tured for application in ordinary elec tronic equipments (such as av equipment, oa equipment, telecommunication equipment, home electroni c appliances, amusement equipment, etc.). if you intend to use our products in devices requiring ex tremely high reliability (such as medical equipment (note 1) , transport equipment, traffic equipment, aircraft/spacecra ft, nuclear power controllers, fuel c ontrollers, car equipment including car accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or serious damage to property (specific applications), please consult with the rohm sale s representative in advance. unless otherwise agreed in writing by rohm in advance, rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of any ro hms products for specific applications. (note1) medical equipment classification of the specific applications japan usa eu china class class class b class class class 2. rohm designs and manufactures its products subject to strict quality control system. however, semiconductor products can fail or malfunction at a certain rate. please be sure to implement, at your own responsibilities, adequate safety measures including but not limited to fail-safe desi gn against the physical injury, damage to any property, which a failure or malfunction of our products may cause. the following are examples of safety measures: [a] installation of protection circuits or other protective devices to improve system safety [b] installation of redundant circuits to reduce the impact of single or multiple circuit failure 3. our products are designed and manufactured for use under standard conditions and not under any special or extraordinary environments or conditio ns, as exemplified below. accordin gly, rohm shall not be in any way responsible or liable for any damages, expenses or losses arising from the use of an y rohms products under any special or extraordinary environments or conditions. if you intend to use our products under any special or extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of product performance, reliability, etc, prior to use, must be necessary: [a] use of our products in any types of liquid, incl uding water, oils, chemicals, and organic solvents [b] use of our products outdoors or in places where the products are exposed to direct sunlight or dust [c] use of our products in places where the products ar e exposed to sea wind or corrosive gases, including cl 2 , h 2 s, nh 3 , so 2 , and no 2 [d] use of our products in places where the products are exposed to static electricity or electromagnetic waves [e] use of our products in proximity to heat-producing components, plastic cords, or other flammable items [f] sealing or coating our products with resin or other coating materials [g] use of our products without cleaning residue of flux (ev en if you use no-clean type fluxes, cleaning residue of flux is recommended); or washing our products by using water or water-soluble cleaning agents for cleaning residue after soldering [h] use of the products in places subject to dew condensation 4. the products are not subjec t to radiation-proof design. 5. please verify and confirm characteristics of the final or mounted products in using the products. 6. in particular, if a transient load (a large amount of load applied in a short per iod of time, such as pulse. is applied, confirmation of performance characteristics after on-boar d mounting is strongly recomm ended. avoid applying power exceeding normal rated power; exceeding the power rating under steady-state loading c ondition may negatively affect product performance and reliability. 7. de-rate power dissipation (pd) depending on ambient temper ature (ta). when used in seal ed area, confirm the actual ambient temperature. 8. confirm that operation temperat ure is within the specified range described in the product specification. 9. rohm shall not be in any way responsible or liable for fa ilure induced under deviant condi tion from what is defined in this document. precaution for mounting / circuit board design 1. when a highly active halogenous (chlori ne, bromine, etc.) flux is used, the resi due of flux may negatively affect product performance and reliability. 2. in principle, the reflow soldering method must be used on a surface-mount products, the flow soldering method must be used on a through hole mount products. if the flow sol dering method is preferred on a surface-mount products, please consult with the rohm representative in advance. for details, please refer to rohm mounting specification downloaded from: http:///
datasheet d a t a s h e e t notice-pga-e rev.001 ? 2015 rohm co., ltd. all rights reserved. precautions regarding application examples and external circuits 1. if change is made to the constant of an external circuit, pl ease allow a sufficient margin considering variations of the characteristics of the products and external components, including transient characteri stics, as well as static characteristics. 2. you agree that application notes, re ference designs, and associated data and in formation contained in this document are presented only as guidance for products use. theref ore, in case you use such information, you are solely responsible for it and you must exercise your own indepen dent verification and judgment in the use of such information contained in this document. rohm shall not be in any way responsible or liable for any damages, expenses or losses incurred by you or third parties arising from the use of such information. precaution for electrostatic this product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. please take proper caution in your manufacturing process and storage so that voltage exceeding t he products maximum rating will not be applied to products. please take special care under dry condit ion (e.g. grounding of human body / equipment / solder iron, isolation from charged objects, se tting of ionizer, friction prevention and temperature / humidity control). precaution for storage / transportation 1. product performance and soldered connections may deteriora te if the products are stor ed in the places where: [a] the products are exposed to sea winds or corros ive gases, including cl2, h2s, nh3, so2, and no2 [b] the temperature or humidity exceeds those recommended by rohm [c] the products are exposed to di rect sunshine or condensation [d] the products are exposed to high electrostatic 2. even under rohm recommended storage c ondition, solderability of products out of recommended storage time period may be degraded. it is strongly recommended to confirm sol derability before using products of which storage time is exceeding the recommended storage time period. 3. store / transport cartons in the co rrect direction, which is indicated on a carton with a symbol. otherwise bent leads may occur due to excessive stress applied when dropping of a carton. 4. use products within the specified time after opening a humidity barrier bag. baking is required before using products of which storage time is exceeding the recommended storage time period. precaution for product label qr code printed on rohm products label is for rohms internal use only. precaution for disposition when disposing products please dispose them proper ly using an authorized industry waste company. precaution for foreign exchange and foreign trade act since concerned goods might be fallen under listed items of export control prescribed by foreign exchange and foreign trade act, please consult with rohm in case of export. precaution regarding intellectual property rights 1. all information and data including but not limited to application example contained in this document is for reference only. rohm does not warrant that foregoi ng information or data will not infringe any intellectual property rights or any other rights of any third party regarding such information or data. 2. rohm shall not have any obligations where the claims, actions or demands arising from the co mbination of the products with other articles such as components, circuits, systems or external equipment (including software). 3. no license, expressly or implied, is granted hereby under any intellectual property rights or other rights of rohm or any third parties with respect to the products or the informati on contained in this document. pr ovided, however, that rohm will not assert its intellectual property rights or other rights against you or your customers to the extent necessary to manufacture or sell products containing the produc ts, subject to the terms and conditions herein. other precaution 1. this document may not be reprinted or reproduced, in whol e or in part, without prior written consent of rohm. 2. the products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written consent of rohm. 3. in no event shall you use in any wa y whatsoever the products and the related technical information contained in the products or this document for any military purposes, incl uding but not limited to, the development of mass-destruction weapons. 4. the proper names of companies or products described in this document are trademarks or registered trademarks of rohm, its affiliated companies or third parties. downloaded from: http:///
datasheet datasheet notice C we rev.001 ? 201 5 rohm co., ltd. all rights reserved. general precaution 1. before you use our pro ducts, you are requested to care fully read this document and fully understand its contents. rohm shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny rohms products against warning, caution or note contained in this document. 2. all information contained in this docume nt is current as of the issuing date and subj ec t to change without any prior notice. before purchasing or using rohms products, please confirm the la test information with a rohm sale s representative. 3. the information contained in this doc ument is provi ded on an as is basis and rohm does not warrant that all information contained in this document is accurate an d/or error-free. rohm shall not be in an y way responsible or liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or concerning such information. downloaded from: http:///

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