SIGC07T60NC edited by infineon technologies ai ps dd hv3, l 7212 - m , edi tion 2 , 28.11 .2003 igbt chip in npt - technology this chip is used for: igbt - modules features: 600v npt technology 100m chip positive temperature coefficient easy paralleling applications: drives g c e chip type v ce i cn die size package ordering code sigc07t60n c 600v 6a 2.6 x 2.6 mm 2 sawn on foil q67050 - a4134 - a001 mechanical parameter: raster size 2.6 x 2.6 area total / active 6.76 / 4.3 emitter pad size 1.11 x 1.78 gate pad size 0.5 x 0.7 mm 2 thickness 100 m wafer size 150 mm flat position 0 deg max.possible chips per wafer 2249 passivation frontside photoimide emitter metallization 3200 nm al si 1% collector metallization 1400 nm ni ag ? system suitable for epoxy and soft solder die bonding die bond electrically conduc tive glue or solder wire bond al, 500m reject ink dot size ? 0.65mm ; max 1.2mm recommended storage environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23c
SIGC07T60NC edited by infineon technologies ai ps dd hv3, l 7212 - m , edi tion 2 , 28.11 .2003 maximum ratings : parameter symbol value unit collector - emitter voltage , t j =25 c v ce 600 v dc collector current, limited by t jmax i c 1 ) a pulsed collector current, t p limited by t jmax i cpuls 18 a gate emitter voltage v ge 20 v operating junction and storage temperature t j , t stg - 55 ... +150 c 1 ) depending on thermal properties of assembly static characteristics (tested on chip), t j =25 c, unless otherwise specified: value parameter symbol conditions min. typ. max. unit collector - emitter brea kdown voltage v (br)ces v ge =0v, i c =500a 600 collector - emitter saturation voltage v ce(sat) v ge =15v, i c =6a 1.7 2.0 2.5 gate - emitter threshold voltage v ge(th) i c =200a, v ge =v ce 4.5 5.5 6.5 v zero gate voltage collector current i ces v ce =600v, v ge =0v 3 0 a gate - emitter leakage current i ges v ce =0v, v ge =2 0v 120 na dynamic characteristics (tested at component): value parameter symbol conditions min. typ. max. unit input capacitance c iss tbd output capacitance c oss tbd reverse transfer capacitance c rss v ce =25v, v ge =0v, f =1mhz tbd p f switching characteristics (tested at component) , inductive load: value parameter symbol conditions 2 ) min. typ. max. unit turn - on delay time t d(on) tbd rise time t r tbd turn - off delay time t d(off) tbd fall time t f t j =125 c v cc =300v i c =6a v ge = 15v r g = -- w tbd ns 2 ) values also influenced by parasitic l - and c - in measurement and package.
SIGC07T60NC edited by infineon technologies ai ps dd hv3, l 7212 - m , edi tion 2 , 28.11 .2003 chip drawing:
SIGC07T60NC edited by infineon technologies ai ps dd hv3, l 7212 - m , edi tion 2 , 28.11 .2003 further electrical characteristics: this chip data sheet refers to th e device data sheet tbd description: aql 0,65 for visual inspection according to failure catalog electrostatic discharge sensitive device according to mil - std 883 test - normen villach/prffeld published by infineon technologies ag , bereich komm unikation st. - martin - strasse 53, d - 81541 mnchen ? infineon technologies ag 2002 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of deli very and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non - infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manu facturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies representatives world - wide (see address list). warnings d ue to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life - support devices or system s with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life - support device or system, or to affect the safety or effectiveness of that device or system. life sup port devices or systems are intended to be implanted in the human body, or to support and / or maintain and sustain and / or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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