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RGS80TS65D 650v 40a field stop trench igbt *1 pulse width limited by t jmax. operating junction temperature t j - 40 to +175 c storage temperature t stg - 55 to +175 c diode pulsed forward current i fp *1 120 a power dissipation t c = 25c p d 272 w t c = 100c p d 136 w pulsed collector current i cp *1 120 a diode forward current t c = 25c i f 56 a t c = 100c i f 30 a collector current t c = 25c i c 73 a t c = 100c i c 40 a collector - emitter voltage v ces 650 v gate - emitter voltage v ges ? 30 v l absolute maximum ratings (at t c = 25c unless otherwise specified) parameter symbol value unit packing code c11 marking RGS80TS65D l packaging specifications type packaging tube l applications reel size (mm) - general inverter tape width (mm) - for automotive and industrial use basic ordering unit (pcs) 450 1) low collector - emitter saturation voltage 2) short circuit withstand time 8s 3) qualified to aec-q101 4) built in very fast & soft recovery frd 5) pb - free lead plating ; rohs compliant l features l inner circuit l outline v ces 650v to-247n i c(100c) 40a v ce(sat) (typ.) 1.65v p d 272w (1) gate (2) collector (3) emitter *1 *1 built in frd (1) (2) (3) (1) (2) (3) 1/11 2016.07 - rev.a data sheet www.rohm.com ? 2016 rohm co., ltd. all rights reserved.
RGS80TS65D l thermal resistance l igbt electrical characteristics (at t j = 25c unless otherwise specified) v ce = 650v, v ge = 0v na 7.0 v v t j = 25c - 1.65 2.10 t j = 175c - 2.15 - 200 collector - emitter saturation voltage v ce(sat) i c = 40a, v ge = 15v gate - emitter threshold voltage v ge(th) v ce = 5v, i c = 2.0ma 5.0 6.0 gate - emitter leakage current i ges v ge = ? 30v, v ce = 0v - - parameter symbol conditions values collector cut - off current i ces collector - emitter breakdown voltage bv ces i c = 10a, v ge = 0v 650 - - t j = 25c t j = 175c - - unit min. typ. max. a ma v 10 5 - - c/w c/w thermal resistance diode junction - case r (j-c) - - 1.17 thermal resistance igbt junction - case r (j-c) - - 0.55 parameter symbol values unit min. typ. max. 2/11 2016.07 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
RGS80TS65D l igbt electrical characteristics (at t j = 25c unless otherwise specified) *2 design assurance without measurement s v cc Q 360v s v ge = 15v, t j = 150c short circuit withstand time t sc *2 6 - - v cc Q 360v v ge = 15v, t j = 25c short circuit withstand time t sc 8 - - mj turn - off switching loss e off reverse recovery - 1.03 - turn - on switching loss e on *e on includes diode - 1.43 - mj turn - off switching loss e off reverse recovery - 1.47 - t d(off) t j = 175c turn - on delay time t d(on) reverse bias safe operating area rbsoa i c = 120a, v cc = 520v full square - v p = 650v, v ge = 15v r g = 50, t j = 175c - 141 - fall time t f inductive load - 150 - ns rise time t r v ge = 15v, r g = 10 - 28 - turn - off delay time i c = 40a, v cc = 400v - 34 - - 112 - fall time t f inductive load - 96 - turn - on switching loss e on *e on includes diode - 1.05 - turn - on delay time t d(on) i c = 40a, v cc = 400v - 37 - ns rise time t r v ge = 15v, r g = 10 - 17 - turn - off delay time t d(off) t j = 25c nc gate - emitter charge q ge i c = 40a - 12 - gate - collector charge q gc v ge = 15v - 19 - - 16 - total gate charge q g v ce = 300v - 48 - parameter symbol conditions values unit min. typ. max. pf output capacitance c oes v ge = 0v - 103 - reverse transfer capacitance c res f = 1mhz input capacitance c ies v ce = 30v - 1240 - 3/11 2016.07 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
RGS80TS65D l frd electrical characteristics (at t j = 25c unless otherwise specified) v cc = 400v di f /dt = 200a/s t j = 25c v cc = 400v di f /dt = 200a/s t j = 175c c diode reverse recovery charge q rr - 1.3 a j diode reverse recovery time diode reverse recovery charge q rr - 0.4 - ns - j diode peak reverse recovery current i rr i f = 30a - 9.8 - diode reverse recovery energy e rr - 113 - c diode reverse recovery energy e rr - 15 - t rr - 242 - ns diode peak reverse recovery current i rr i f = 30a - 7.1 - a diode reverse recovery time t rr - 103 - v t j = 25c - 1.45 1.90 t j = 175c - 1.55 - diode forward voltage v f i f = 30a parameter symbol conditions values unit min. typ. max. 4/11 2016.07 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
RGS80TS65D l electrical characteristic curves fig.2 collector current vs. case temperature collector current : i c [a] case temperature : t c [oc] collector to emitter voltage : v ce [v] fig.4 reverse bias safe operating area collector current : i c [a] collector to emitter voltage : v ce [v] fig.1 power dissipation vs. case temperature power dissipation : p d [w] case temperature : t c [oc] fig.3 forward bias safe operating area collector current : i c [a] 0 20 40 60 80 100 120 140 160 180 200 220 240 260 280 300 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 160 0 200 400 600 800 t j Q 175oc v ge =15v 0 10 20 30 40 50 60 70 80 0 25 50 75 100 125 150 175 t j Q 175oc v ge R 15v 0.01 0.1 1 10 100 1000 1 10 100 1000 t c = 25oc single pulse 10 s 100 s 5/11 2016.07 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
RGS80TS65D l electrical characteristic curves fig.5 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.6 typical output characteristics collector current : i c [a] collector to emitter voltage : v ce [v] fig.7 typical transfer characteristics collector current : i c [a] gate to emitter voltage : v ge [v] fig.8 typical collector to emitter saturation voltage vs. junction temperature collector to emitter saturation voltage : v ce(sat) [v] junction temperature : t j [oc] 0 20 40 60 80 100 120 0 1 2 3 4 5 t j = 175oc v ge = 20v v ge = 12v v ge = 10v v ge = 8v v ge = 15v 0 20 40 60 80 100 120 0 1 2 3 4 5 t j = 25oc v ge = 20v v ge = 15v v ge = 12v v ge = 10v v ge = 8v 0 10 20 30 40 50 60 0 2 4 6 8 10 12 v ce = 10v t j = 25oc t j = 175oc 0 1 2 3 4 25 50 75 100 125 150 175 i c = 80a i c = 20a i c = 40a v ge = 15v 6/11 2016.07 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
RGS80TS65D l electrical characteristic curves collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] collector to emitter saturation voltage : v ce(sat) [v] gate to emitter voltage : v ge [v] switching time [ns] collector current : i c [a] fig.12 typical switching time vs. gate resistance switching time [ns] gate resistance : r g [ ] fig.9 typical collector to emitter saturation voltage vs. gate to emitter voltage fig.10 typical collector to emitter saturation voltage vs. gate to emitter voltage fig.11 typical switching time vs. collector current 0 5 10 15 20 5 10 15 20 t j = 25oc i c = 80a i c = 20a i c = 40a 0 5 10 15 20 5 10 15 20 t j = 175oc i c = 80a i c = 20a i c = 40a 1 10 100 1000 0 10 20 30 40 50 60 70 80 t f v cc =400v, v ge =15v r g =10 , t j =175oc inductive oad t d(off) t d(on) t r 1 10 100 1000 0 10 20 30 40 50 t f t d(off) t d(on) t r v cc =400v, i c =40a v ge =15v , t j =175oc inductive oad 7/11 2016.07 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
RGS80TS65D l electrical characteristic curves fig.13 typical switching energy losses vs. collector current switching energy losses [mj] collector current : i c [a] fig.14 typical switching energy losses vs. gate resistance switching energy losses [mj] gate resistance : r g [ ] fig.15 typical capacitance vs. collector to emitter voltage capacitance [pf] collector to emitter voltage : v ce [v] fig.16 typical gate charge gate to emitter voltage : v ge [v] gate charge : q g [nc] 0.01 0.1 1 10 0 10 20 30 40 50 60 70 80 e off v cc =400v, v ge =15v r g =10 , t j =175oc inductive oad e on 1 10 100 1000 10000 0.01 0.1 1 10 100 cies f=1mhz v ge =0v t j =25oc coes cres 0.01 0.1 1 10 0 10 20 30 40 50 e off e on v cc =400v, i c =40a v ge =15v , t j =175oc inductive oad 0 5 10 15 0 10 20 30 40 50 i c =40a t j =25oc 200v 300v 400v 8/11 2016.07 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
RGS80TS65D l electrical characteristic curves 0 0.1 0.2 0.3 0.4 0.5 0.6 0 10 20 30 40 50 60 v cc =400v t j = 175oc inductive oad r g =10 r g =20 r g =50 fig.17 typical diode forward current vs. forward voltage forward current : i f [a] forward voltage : v f [v] fig.18 typical diode reverse recovery time vs. forward current reverse recovery time : t rr [ns] forward current : i f [a] fig.19 typical diode reverse recovery current vs. forward current reverse recovery current : i rr [a] forward current : i f [a] fig.20 typical diode reverse recovery energy losses vs. forward current reverse recovery energy losses : e rr [mj] forward current : i f [a] 0 20 40 60 80 100 120 0 0.5 1 1.5 2 2.5 3 t j = 175oc t j = 25oc 0 100 200 300 400 0 10 20 30 40 50 60 v cc =400v di f /dt=200a/s inductive oad t j = 175oc t j = 25oc 0 5 10 15 20 0 10 20 30 40 50 60 t j = 175oc t j = 25oc v cc =400v di f /dt=200a/s inductive oad 9/11 2016.07 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
RGS80TS65D l electrical characteristic curves 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 d= 0.5 0.2 0.1 0.01 0.02 0.05 single pulse 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 d= 0.5 0.2 0.1 0.01 0.02 0.05 single pulse fig.21 igbt transient thermal impedance transient thermal impedance : z thjc [oc/w] pulse width : t1[s] fig.22 diode transient thermal impedance transient thermal impedance : z thjc [oc/w] pulse width : t1[s] t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc + t c t1 t2 p dm duty=t1/t2 peak t j =p dm z thjc + t c 10/11 2016.07 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet c1 c2 c3 r1 r2 r3 3.282m 29.92m 78.57m 402.0m 134.1m 13.88m c1 c2 c3 r1 r2 r3 1.266m 10.51m 49.06m 492.7m 364.8m 312.7m
RGS80TS65D l inductive load switching circuit and waveform vg d.u.t. d.u.t. i f di f /dt i rr t rr , q rr fig.23 inductive load circuit fig.24 inductive load waveform fig.25 diode reverce recovery waveform t r t off 10% 90% t f t d(on) t d(off) gate drive time v ce(sat) 10% 90% t on v ge i c v ce e on 10% e o ff 11/11 2016.07 - rev.a www.rohm.com ? 2016 rohm co., ltd. all rights reserved. data sheet
r1 102 b www .rohm.com ? 2016 rohm co., ltd. all rights reserved. notice rohm c u stomer support sys tem h ttp://w w w . r ohm .com/con tact/ thank you for your accessing to rohm pr oduct informations. mor e detail pr oduct informations and catalogs ar e available, please contact us. the inf or mation contained herein is subject to change without notic e . bef ore y ou use our p r o d u c t s , ple a s e c o n t a c t o u r s a l e s r e p r e s e n t a t i v e and v e r i f y the l a test specifica- tions : althoug h r o h m is c o n t i n uousl y w o r king t o impro ve p roduct r elia bility and quality , semicon- duc tors c an brea k do w n and mal f unction due to va r ious f actor s . the ref o r e , i n ord e r to p r e ve n t per sonal i n jur y or fire a r isin g f rom f a ilure , please tak e saf ety meas ure s suc h a s c o m plying wit h the der ating cha r a cte r istics , imple menting redundant and f ire p r e ve nti o n d e s i g n s , and u tilizing bac k ups a nd f ail- saf e p rocedures . r o hm shall h a ve no responsibility f or an y damages ar ising out of the use of our p oducts beyond the r ating specified b y r ohm. examples of application circuits , circuit constants and an y other inf or mation contained herein are pro vided only to illustr ate the standard usage and oper ations of the products . the per iphe r al conditions m ust be tak en into account when designing circuits f or mass production. the technical inf or mation specified herein is intended only to sho w the typical functions of and e xamples of application circuits f or the products . r ohm does not grant y ou, e xplicitly or implicitl y , an y license to use or e x ercise intellectual prope r ty or other r ights held b y r ohm or an y other par ties . r ohm shall ha v e no responsibility whatsoe v er f or an y dispute ar ising out of the use of such technical in f or mation. the products specified in this document are not designed to be r adiation tole r ant. f or use of our products in applications requi r ing a high deg ree of reliability (as exemplified belo w), please contact and consult with a r ohm representati v e : tr anspo r tation equipment (i.e . cars , ships , tr ains), pr imar y comm unication equipment, tr affic lights , fire/cr ime pr e v ention, saf ety equipment, medical system s , ser v ers , solar cells , and po w er tr ansmission system s . do not use our products in applications requir ing e xtremely high reliabilit y , such as aerospace equipment, n uclear p o w er control systems , and submar ine repeater s . r ohm shall ha v e no responsibility f or an y damages or inju r y ar ising from non-compliance with the recommended usage conditions and specifications contained herein. r ohm has used reasona b le care to ensur the accur acy of the inf or mation contained in this document . ho w e v er , r ohm does not w arr ants that such inf or mation is error-free , and r ohm shall ha v e no responsibility f or an y damages ar ising from an y inaccu r acy or mispr int of such inf or mation. please use the products in accordance with an y applica b le en vironmental la ws and regulation s , such as the rohs directiv e . f or more details , including rohs compatibilit y , please contact a r ohm sales office . r ohm shall ha v e no responsibility f or an y damages or losses resulting non-compliance with a n y applica b le la ws or regulation s . when pro viding our products and technologies contained in this document to other countr ies , y ou m ust abide b y the procedures and pro visions stipulated in all applica b le e xpor t la ws and regulation s , including without limitation the us expor t administr ation regulations and the f oreign exchange and f oreign t r ade act. this document, in par t or in whol e , ma y not be repr inted or reproduced without pr ior consent of r ohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10) 11) 12) 13) notes
datasheet part number RGS80TS65Dhr package to-247n unit quantity 450 minimum package quantity 30 packing type tube constitution materials list inquiry rohs yes RGS80TS65Dhr - web page distribution inventory

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