unisonic technologies co., ltd bss84zt power mosfet www.unisonic.com.tw 1 of 3 copyright ? 2015 unisonic technologies co., ltd qw-r502-a61.b 0.13a, 50v p-channel enhancement mode field effect transistor ? description these p-channel enhancement mode field vertical d-mos transistors are in a sot-523 smd package, and in most applications they require up to 0.13a dc and can deliver current up to 0.52a. this product is particularly suited to low voltage applications requiring a low current high side switch. ? features * r ds(on) < 10 ? @ v gs =-4.5v, i d =-0.1a ? symbol ? ordering information pin assignment ordering number package 1 2 3 packing BSS84ZTG-AN3-R sot-523 s g d tape reel note: pin assignment: s: source g: gate d: drain ? marking s84g
bss84zt power mosfet unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r502-a61.b ? absolute maximum ratings (t a = 25 c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss -50 v gate-source voltage v gss 20 v dc -0.13 continuous drain current pulse i d -0.52 a power dissipation p d 0.15 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only an d functional device operat ion is not implied. ? thermal data parameter symbol ratings unit junction to ambient ja 625 c/w ? electrical characteristics (t a =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =-250a -50 v zero gate voltage drain current i dss v ds =-50v, v gs =0v -15 a gate?body leakage, forward i gss v ds =0v, v gs =20v 10 a on characteristics (note) gate-threshold voltage v gs(th) v ds =v gs , i d =-1m a -0.8 -1.7 -2 v static drain?source on?resistance r ds(on) v gs =-4.5v, i d =-0.1a 1.2 10 ? on-state drain current i d(on) v gs =-10 v, v ds =-5v -0.6 a forward transconductance g fs v ds =-25v, i d =-0.1a 0.05 0.6 s dynamic parameters input capacitance c iss 73 pf output capacitance c oss 10 pf reverse transfer capacitance c rss v ds =-25v, v gs =0v, f=1mhz 5 pf switching parameters (note) total gate charge q g 0.9 1.3 nc gate source charge q gs 0.2 nc gate drain charge q gd v ds =-30v, v gs =-10v, i d =-0.1a 0.3 nc turn-on delay time t d(on) 2.5 5 ns turn-on rise time t r 6.3 13 ns turn-off delay time t d(off) 10 20 ns turn-off fall-time t f v dd =-30v, i d =-0.1a,v gs =-10v, r g =6 ? , 4.8 9.6 ns source- drain diode ratings and characteristics drain-source diode forward voltage v sd v gs = 0v, i s =-0.13a (note) -0.8 -1.2 v max. diode forward current i s -0.13 a pulsed drain-source current i sm -0.52 a note: pulse test, pulse width 300us, duty cycle 2%
bss84zt power mosfet unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r502-a61.b utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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